AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS ( MOS LV) technologyα • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Features Q1 Q2 VDS 30V 30V ID (at VGS=10V) 16A 18A RDS(ON) (at VGS=10V) <10.2mΩ <7.7mΩ RDS(ON) (at VGS = 4.5V) <15.8mΩ <11.6mΩ Top View 100% UIS Tested Bottom View 100% Rg Tested Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max Q1 Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Units V ±20 ±20 V 16 18 12 14 64 72 13 15 7.8 9 ID TC=100°C Pulsed Drain Current C IDM TA=25°C Continuous Drain Current Max Q2 IDSM TA=70°C 30 A A Avalanche Current C IAS 19 25 A Avalanche Energy L=0.05mH C EAS 3.0 4.1 mJ VDS Spike 100ns VSPIKE 36 36 V Power Dissipation B TC=100°C TC=25°C TA=25°C Power Dissipation A PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1 / 10 23 25 9 10 2.5 2.5 0.9 0.9 PD TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC -55 to 150 Typ Q1 40 70 4.5 Max Q1 50 90 5.4 Typ Q2 Max Q2 40 50 70 90 4.2 5 W W °C Units °C/W °C/W °C/W www.freescale.net.cn AON7934 30V Dual Asymmetric N-Channel AlphaMOS Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance 5 1.2 VGS=10V, ID=13A TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=13A 1.8 µA 100 nA 2.2 V 8.3 10.2 11.2 13.7 12.4 15.8 mΩ 1 V 16 A 50 0.7 mΩ S 485 pF 235 pF 32 pF 1.8 2.7 Ω 8 11 nC 3.9 5.3 nC 1.1 nC Gate Drain Charge 2.1 nC Turn-On DelayTime 3.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=13A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs Qrr 0.9 Units V 1 TJ=55°C VDS=5V, ID=13A Max 30 VDS=30V, VGS=0V IDSS Coss Typ VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 2.8 ns 16.3 ns 3 ns 9.9 ns nC 12.9 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2 / 10 www.freescale.net.cn AON7934 30V Dual Asymmetric N-Channel AlphaMOS Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 60 10V 6V VDS=5V 8V 50 4.5V 60 40 ID(A) ID (A) 4V 40 3.5V 125°C 30 25°C 20 20 VGS=3V 10 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.6 Normalized On-Resistance 20 VGS=4.5V 15 RDS(ON) (mΩ Ω) 1 10 VGS=10V 5 0 VGS=10V ID=13A 1.4 1.2 VGS=4.5V ID=10A 1 0.8 0 2 4 6 8 10 12 14 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 25 1.0E+02 ID=13A 1.0E+01 20 40 10 25°C 5 1.0E-01 25°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3 / 10 125°C 125°C 15 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7934 30V Dual Asymmetric N-Channel AlphaMOS Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 700 VDS=15V ID=13A 600 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 500 400 300 Coss 200 2 Crss 100 0 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 30 200 1000.0 160 100.0 RDS(ON) limited 10.0 TJ(Max)=150°C TC=25°C 10µs 100us 1ms 1.0 DC Power (W) ID (Amps) 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 120 TJ(Max)=150°C TC=25°C 0.1 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5.4°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 / 10 www.freescale.net.cn AON7934 30V Dual Asymmetric N-Channel AlphaMOS Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 25 Current rating ID(A) Power Dissipation (W) 30 20 15 10 30 20 10 5 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 0 150 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=90°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) 5 / 10 www.freescale.net.cn AON7934 30V Dual Asymmetric N-Channel AlphaMOS Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance TJ=55°C 5 1.2 VGS=4.5V, ID=10A 9.1 11.6 100 0.7 Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) V 7.7 gFS Reverse Transfer Capacitance nA 2.2 10.3 VSD VGS=10V, VDS=15V, ID=15A 0.6 µA 100 6.3 VDS=5V, ID=15A Crss 1.8 8.4 TJ=125°C Units V 1 VGS=10V, ID=15A Output Capacitance Max 30 VDS=30V, VGS=0V IDSS Coss Typ mΩ mΩ S 1 V 18 A 807 pF 314 pF 40 pF 1.3 2 Ω 12.9 17.5 nC 6 8.5 nC 2.1 nC Gate Drain Charge 3 nC Turn-On DelayTime 4.8 ns 3.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω IF=15A, dI/dt=500A/µs 18.8 ns 3.3 ns 11.3 ns nC 15 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 6 / 10 www.freescale.net.cn AON7934 30V Dual Asymmetric N-Channel AlphaMOS Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 60 8V VDS=5V 5V 80 4.5V 60 4V 50 ID(A) ID (A) 40 125°C 30 25°C 40 20 Vgs=3V 20 10 0 0 0 1 2 3 4 0 5 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 1.6 9 VGS=4.5V RDS(ON) (mΩ Ω) 1 8 7 6 VGS=10V 5 VGS=10V ID=15A 1.4 17 5 2 VGS=4.5V ID=10A 10 1.2 1 0.8 4 0 3 0 6 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 20 1.00E+02 ID=15A 1.00E+01 40 125°C 10 5 125°C 1.00E+00 IS (A) RDS(ON) (mΩ Ω) 15 25°C 1.00E-01 1.00E-02 25°C 1.00E-03 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 7 / 10 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7934 30V Dual Asymmetric N-Channel AlphaMOS Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=15A 1000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 800 600 Coss 400 200 0 Crss 0 0 3 6 9 12 15 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 30 200 1000.0 100.0 TJ(Max)=150°C TC=25°C 160 10µs RDS(ON) limited 10.0 100µs 1ms DC 1.0 Power (W) ID (Amps) 10 120 TJ(Max)=150°C TC=25°C 0.1 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5°C/W 40 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 8 / 10 www.freescale.net.cn AON7934 30V Dual Asymmetric N-Channel AlphaMOS Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 25 Current rating ID(A) Power Dissipation (W) 30 20 15 10 40 30 20 10 5 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) TCASE (° °C) Figure 12: Power De-rating (Note F) 150 10000 Power (W) TA=25°C 1000 100 10 1 0.00001 0.001 0.1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 1000 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) 9 / 10 www.freescale.net.cn AON7934 30V Dual Asymmetric N-Channel AlphaMOS Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 10 / 10 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn