AOD403/AOI403 30V P-Channel AlphaMOS General Description The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Features VDS -30V -70A ID (at VGS= -20V) RDS(ON) (at VGS= -20V) < 6.2mΩ RDS(ON) (at VGS = -10V) < 8mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C A -15 A -12 Avalanche Current C IAS, IAR -50 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 125 mJ Power Dissipation B Junction and Storage Temperature Range 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 45 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 90 PD TC=100°C TA=25°C Power Dissipation A 1/6 V -200 IDSM TA=70°C ±25 -55 IDM TA=25°C Units V -70 ID TC=100°C Maximum -30 -55 to 175 Typ 16 41 0.9 °C Max 20 50 1.6 Units °C/W °C/W °C/W www.freescale.net.cn AOD403/AOI403 30V P-Channel AlphaMOS Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -200 TJ=55°C -5 nA -3.5 V 5.1 6.2 7.6 9.2 6.2 8 mΩ VGS=-20V, ID=-20A TO251A 5.6 6.7 mΩ VGS=-10V, ID=-20A TO251A 6.7 8.5 mΩ 42 gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 TO252 VGS=-10V, ID=-20A TO252 Coss Units -2.5 VGS=-20V, ID=-20A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=-10V, VDS=-15V, ID=-20A A mΩ S -0.7 -1 V -70 A 2310 2890 3500 pF 410 585 760 pF 280 470 660 pF 1.9 3.8 5.7 Ω 40 51 61 nC 10 12 14 nC 16 22 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 14 18 22 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 9 11 13 10 VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω 16 ns 12 ns 45 ns 22 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOD403/AOI403 30V P-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 -10V VDS=-5V -6V 80 80 -5V 60 -ID(A) -ID (A) 60 40 125°C 40 -4.5V 25°C 20 20 VGS=-4V 0 0 0 1 2 3 4 1.5 3 3.5 4 4.5 5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance RDS(ON) (mΩ Ω) 2.5 6 1.8 8 VGS=-10V 6 4 VGS=-20V 2 VGS=-20V ID=-20A 1.6 1.4 17 5 2 VGS=-10V 10 1.2 ID=-20A 1 0.8 0 5 0 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 20 1.0E+02 ID=-20A 1.0E+01 40 15 1.0E+00 125°C 10 5 25°C 125°C -IS (A) RDS(ON) (mΩ Ω) 2 1.0E-01 25°C 1.0E-02 1.0E-03 1.0E-04 0 1.0E-05 0 10 15 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOD403/AOI403 30V P-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=-15V ID=-20A 8 4000 Capacitance (pF) -VGS (Volts) Ciss 6 4 3000 2000 Coss 2 1000 0 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 60 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 400 1000.0 10µs 100.0 RDS(ON) limited 10.0 320 100µs 1ms 10ms DC 1.0 0.1 TJ(Max)=175°C TC=25°C 10µs Power (W) -ID (Amps) Crss 240 160 TJ(Max)=175°C TC=25°C 80 0.0 0 0.01 0.1 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.6°C/W 40 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD403/AOI403 30V P-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 TA=25°C TA=100°C 100.0 TA=150°C Power Dissipation (W) -IAR (A) Peak Avalanche Current 1000.0 120 90 60 30 TA=125°C 0 10.0 1 10 100 0 1000 25 50 75 100 175 10000 80 70 TA=25°C 1000 60 Power (W) Current rating ID(A) 150 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (ms) Figure 12: Single Pulse Avalanche capability (Note C) 50 40 30 100 10 20 10 1 0 0.00001 0 10 Zθ JA Normalized Transient Thermal Resistance 125 1 25 50 75 100 125 150 TCASE (°°C) Figure 14: Current De-rating (Note F) 0.1 10 1000 0 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to18 Ambient (Note H) 175 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOD403/AOI403 30V P-Channel AlphaMOS Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgs Vds + VDC Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn