2SB1316 Transistors Power Transistor (−100V , −2A) 2SB1316 zExternal dimensions (Unit : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. 6.5 1.5 0.9 0.65 1.5 2.3 0.8Min. 0.5 1.0 2SB1316 CPT3 1k to 10k − TL 2500 C0.5 0.5 2SB1580 MPT3 1k to 10k BN∗ T100 1000 5.5 5.1 W(Tc=25°C) °C °C zPackaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 0.75 2SB1316 0.9 ∗2 (1) ∗1 W 2.3 2SB1580 Collector PC power 2SB1316 dissipation Junction temperature Tj Tstg Storage temperature ∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board. Unit V V V A(DC) A(Pulse) (2) IC Collector current Limits −100 −100 −8 −2 −3 2 1 10 150 −55 to +150 (3) Symbol VCBO VCEO VEBO ROHM : MPT3 EIAJ : SC-62 2.3 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage (1) Base (2) Collector (3) Emitter 0.4 zAbsolute maximum ratings (Ta = 25°C) 1.5 1.5 0.4 (3) 2.5 9.5 (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE zEquivalent circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −100 −100 −10 − − − 1000 − − Typ. − − − − − − − 50 35 Max. − − − −10 −3 −1.5 10000 − − Unit V V V µA mA V − MHz pF Conditions IC = −50µA IC = −5mA IE = −5mA VCB = −100V VEB = −7V IC/IB= −1A/−1mA VCE = −2V , IC = −1A VCE = −5V , IE =0.1A , f = 30MHz VCB = −10V , IE = 0A , f = 1MHz ∗ ∗ ∗ Measured using pulse current. Rev.A 1/2 2SB1316 Transistors zElectrical characteristics curve −0.7mA mA −0.4 −1.2 A IB= −0.8 m −0.3 −0.4 0 −1 0 −2 −3 −4 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.4 0 −10 −5 −2 −1 −0.5 −0.2 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.4 Collector-emitter saturation voltage vs. collector current COLLECTOR CURRENT : IC (A) 200 100 50 −1.2 −1.6 −2.0 −2.4 10 −0.01 −0.02 −2.8 1000 Ta=25°C IE=0A f=1MHz 500 200 100 50 20 10 5 2 1 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.5 Collector output capacitance vs. collector-base voltage −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current Ta=25°C ∗ Single NONREPETITIVE PULSE 50 20 10 5 Ic Max. (Pulse∗) 2 Pw=10ms∗ DC 1 500m Pw=100ms∗ 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.6 Safe Operating area (2SB1580) Ta=25°C ∗ Single NONREPETITIVE PULSE 50 20 10 5 −0.8 Fig.2 Grounded emitter propagation characteristics COLLECTOR OUTPUT CAPACITANCE: Cob (pF) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C IC / IB =1000 −0.1 −0.05 −0.1 1k 500 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output characteristics −20 2k 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −50 Ta=25°C VCE= −2V 5k −0.02 −0.01 −5 10k Ta=25°C VCE= −2V −5 DC CURRENT GAIN : hEF −1.6 −0.8mA −10 Ta=25°C A 6m −0. mA 5 . −0 COLLECTOR CURRENT : IC (A) −1mA −0.9mA COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) −2.0 Ic Max. (Pulse∗) 2 Pw=10ms∗ DC 1 500m Pw=100ms∗ 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe Operating area (2SB1316) Rev.A 2/2 Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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