ROHM 2SC4061KT146N

Chroma amplifier transistor (300V, 0.1A)
2SC4061K
Dimensions (Unit : mm)
(2)
0.95 0.95
1.9
2.9
(3)
0.4
(1)
Features
1) High breakdown voltage. (BVCEO=300V)
2) Low collector output capacitance.
(Typ. 3pF at VCB=30V)
3) Ideal for chroma circuit.
1.6
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
300
300
V
V
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
PC
5
100
0.2
V
mA
W
Tj
Tstg
150
−55 to +150
°C
0.3Min.
0.8
0~0.1
Parameter
0.15
Absolute maximum ratings (Ta=25C)
ROHM : SMT3
EIAJ : SC-59
1.1
2.8
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
°C
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SC4061K
SMT3
NP
∗
AN
T146
3000
∗ Denotes hFE
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
300
300
−
−
BVEBO
5
−
−
−
−
V
V
V
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
−
−
56
50
−
−
−
−
−
100
3
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c 2012 ROHM Co., Ltd. All rights reserved.
○
−
0.5
0.5
2
120
−
−
μA
μA
V
−
MHz
pF
Conditions
IC=50μA
IC=100μA
IE=50μA
VCB=200V
VEB=4V
IC/IB=50mA/5mA
VCE/IC=10V/10mA
VCE=30V, IE=−10mA, f=30MHz
VCB=30V, IE=0A, f=1MHz
1/3
2012.01 - Rev.C
2SC4061K
Data Sheet
Electrical characteristics curves
0.4mA
20
0
IB=0.2mA
0
2
4
6
8
0.6mA
40
0.4mA
20
0
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
IB=0.2mA
0
4
12
16
10
5
2
1
0.5
200
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output
characteristics ( Ι )
500
8
20
500
400
600
800
1000
1200
1400
1600
BASE TO EMITTER VOLTAGE : VBE (mV)
Fig.2 Ground emitter output
characteristics ( ΙΙ )
Ta=25°C
−25°C
40
60
50
°C
A
1.0m
0.8mA
A
m
.6
0
A
1.0m
0.8mA
Ta=10
0
60
1.4mA
1.2mA
80
VCE=10V
100
25°C
1.4mA
1.2mA
200
2.0mA
1.8mA
1.6mA
COLLECTOR CURRENT : IC (mA)
80
100 Ta=25°C
Ta=25°C
2.0mA
1.8mA
1.6mA
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
100
Fig.3 Ground emitter propagation
characteristics
2
VCE=10V
Ta=25°C
200
VCE=10V
100
5V
50
20
Ta=100°C
200
100
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
1
25°C
50
−25°C
20
10
5
0.5
IC/IB=10
0.2
0.1
5
0.05
10
0.5 1
2
5 10
20
2
0.2
50 100
2
5 10
20
50 100
Fig.4 DC current gain
vs. collector current ( Ι )
Fig.5 DC current gain
vs. collector current ( ΙΙ )
2
200 Ta=25°C
IC/IB=10
1 Ta=−25°C
25°C
VBE(sat)
0.5
100°C
0.2
0.1
Ta=100°C
25°C
VCE(sat)
−25°C
0.05
0.02
0.2
0.5 1
2
5 10
20
50 100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. collector current
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c 2012 ROHM Co., Ltd. All rights reserved.
○
0.02
0.2
0.5 1
COLLECTOR CURRENT : IC (mA)
TRANSITION FREQUWNCY : fT (MHZ)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
BASE SATURATION VOLTAGE : VBE(sat) (V)
COLLECTOR CURRENT : IC (mA)
0.5 1
VCE=30
10V
50
20
10
−2
−5
−10
−20
−50
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product
vs. emitter current
2/3
5 10
20
50 100
Fig.6 Collector-emitter saturation voltage
vs. collector current
100
5
−1
2
COLLECTOR CURRENT : IC (mA)
−100
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
5
0.2
20 Ta=25°C
f=1MHz
10 IE=0A
5
2
1
0.5
1
2
5
10
20
50
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector output capacitance
vs. collector-base voltage
2012.01 - Rev.C
Data Sheet
Ta=25°C
∗single
nonrepetitive
pulse
500m
IC Max (Pulse)
200m
s∗
m
s∗
=1
0m
Pw
s∗
=1
m
Pw
00
=1 s∗
Pw w=2
P
COLLECTOR CURRENT : IC (A)
2SC4061K
DC
100m
50m
20m
10m
5m
2m
1m
1
2
5
10 20
50 100 200
500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area
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c 2012 ROHM Co., Ltd. All rights reserved.
○
3/3
2012.01 - Rev.C
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R1120A