Chroma amplifier transistor (300V, 0.1A) 2SC4061K Dimensions (Unit : mm) (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO 300 300 V V Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature VEBO IC PC 5 100 0.2 V mA W Tj Tstg 150 −55 to +150 °C 0.3Min. 0.8 0~0.1 Parameter 0.15 Absolute maximum ratings (Ta=25C) ROHM : SMT3 EIAJ : SC-59 1.1 2.8 Each lead has same dimensions (1) Emitter (2) Base (3) Collector °C Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SC4061K SMT3 NP ∗ AN T146 3000 ∗ Denotes hFE Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO 300 300 − − BVEBO 5 − − − − V V V ICBO IEBO VCE(sat) hFE fT Cob − − 56 50 − − − − − 100 3 www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ − 0.5 0.5 2 120 − − μA μA V − MHz pF Conditions IC=50μA IC=100μA IE=50μA VCB=200V VEB=4V IC/IB=50mA/5mA VCE/IC=10V/10mA VCE=30V, IE=−10mA, f=30MHz VCB=30V, IE=0A, f=1MHz 1/3 2012.01 - Rev.C 2SC4061K Data Sheet Electrical characteristics curves 0.4mA 20 0 IB=0.2mA 0 2 4 6 8 0.6mA 40 0.4mA 20 0 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) IB=0.2mA 0 4 12 16 10 5 2 1 0.5 200 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics ( Ι ) 500 8 20 500 400 600 800 1000 1200 1400 1600 BASE TO EMITTER VOLTAGE : VBE (mV) Fig.2 Ground emitter output characteristics ( ΙΙ ) Ta=25°C −25°C 40 60 50 °C A 1.0m 0.8mA A m .6 0 A 1.0m 0.8mA Ta=10 0 60 1.4mA 1.2mA 80 VCE=10V 100 25°C 1.4mA 1.2mA 200 2.0mA 1.8mA 1.6mA COLLECTOR CURRENT : IC (mA) 80 100 Ta=25°C Ta=25°C 2.0mA 1.8mA 1.6mA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 Fig.3 Ground emitter propagation characteristics 2 VCE=10V Ta=25°C 200 VCE=10V 100 5V 50 20 Ta=100°C 200 100 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 1 25°C 50 −25°C 20 10 5 0.5 IC/IB=10 0.2 0.1 5 0.05 10 0.5 1 2 5 10 20 2 0.2 50 100 2 5 10 20 50 100 Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) 2 200 Ta=25°C IC/IB=10 1 Ta=−25°C 25°C VBE(sat) 0.5 100°C 0.2 0.1 Ta=100°C 25°C VCE(sat) −25°C 0.05 0.02 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage Base-emitter saturation voltage vs. collector current www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 0.02 0.2 0.5 1 COLLECTOR CURRENT : IC (mA) TRANSITION FREQUWNCY : fT (MHZ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : IC (mA) 0.5 1 VCE=30 10V 50 20 10 −2 −5 −10 −20 −50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 2/3 5 10 20 50 100 Fig.6 Collector-emitter saturation voltage vs. collector current 100 5 −1 2 COLLECTOR CURRENT : IC (mA) −100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 5 0.2 20 Ta=25°C f=1MHz 10 IE=0A 5 2 1 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector-base voltage 2012.01 - Rev.C Data Sheet Ta=25°C ∗single nonrepetitive pulse 500m IC Max (Pulse) 200m s∗ m s∗ =1 0m Pw s∗ =1 m Pw 00 =1 s∗ Pw w=2 P COLLECTOR CURRENT : IC (A) 2SC4061K DC 100m 50m 20m 10m 5m 2m 1m 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 3/3 2012.01 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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