MBR12045CT thru MBR120100CTR
Silicon Power
Schottky Diode
VRRM = 20 V - 100 V
IF = 120 A
Features
• High Surge Capability
• Types up to 100 V VRRM
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward
current
Symbol
Conditions
MBR12045CT (R) MBR12060CT (R) MBR12080CT (R) MBR120100CT (R) Unit
VRRM
45
60
80
100
V
VRMS
32
42
56
70
V
VDC
45
60
80
100
V
120
120
120
120
A
800
800
800
800
A
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
°C
°C
IF
TC ≤ 140 °C
Surge non-repetitive
forward current, Half
Sine Wave
IF,SM TC = 25 °C, tp = 8.3 ms
Operating temperature
Storage temperature
Tj
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Diode forward voltage
VF
Reverse current
IR
IF = 60 A, Tj = 25 °C
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
Parameter
MBR12045CT (R) MBR12060CT (R) MBR12080CT (R) MBR120100CT (R) Unit
0.65
3
200
0.75
3
200
0.84
3
200
0.84
3
200
0.8
0.8
0.8
0.8
V
mA
Thermal characteristics
Thermal resistance,
junction - case
www.genesicsemi.com
RthJC
1
°C/W
MBR12045CT thru MBR120100CTR
www.genesicsemi.com
2