Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET VDS (V) –8 8 rDS(on) () ID (A) 0.280 @ VGS = –4.5 V 0.92 0.380 @ VGS = –2.5 V 0.79 0.530 @ VGS = –1.8 V 0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code Lot Traceability and Date Code S 2 Part # Code Top View Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS –8 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150C) 150 C)a TA = 25C ID TA = 70C Pulsed Drain Current IS TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range PD V 0.86 0.92 0.74 0.69 A 3 IDM Continuous Diode Current (Diode Conduction)a Unit –0.28 –0.24 0.34 0.29 0.22 0.19 W TJ, Tstg C –55 to 150 Parameter Maximum Junction-to-Ambienta Symbol t 5 sec Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 315 375 360 430 285 340 Unit C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71095 S-99399—Rev. A, 29-Nov-99 www.siliconix.com FaxBack 408-970-5600 1 Si1305DL New Product Vishay Siliconix Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –045 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Voltagea "1 VDS = –6.4 V, VGS = 0 V –1 VDS = –6.4 V, VGS = 0 V, TJ = 70C –5 VDS = –5 V, VGS = –4.5 V mA mA –3 A VGS = –4.5 V, ID = –1 A 0.230 0.280 VGS = –2.5 V, ID = –0.5 A 0.315 0.380 VGS = –1.8 V, ID = –0.3 A 0.440 0.530 gfs VDS = –5 V, ID = –1 A 3.5 VSD IS = –1 A, VGS = 0 V rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "4.5 V ID(on) a D i S Drain-Source On-State O S Resistance R i V W S –1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.52 Turn-On Delay Time td(on) 206 tr 431 690 1350 2160 1000 1600 500 800 Rise Time Turn-Off Delay Time 2.6 VDS = –4 4 V, V VGS = –4.5 45V V, ID = –1 1A VDD = –4 4V V,, RL = 4 W ID ^ –1 1 A, A VGEN = –4.5 45V V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 4 nC C 0.54 IF = –1 A, di/dt = 100 A/ms 330 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. $# $# !#!"#" !"! !#!"#" 8 6 VGS = 4.5 V TC = –55C 4V 5 3.5 V 25C 3V I D – Drain Current (A) I D – Drain Current (A) 6 2.5 V 4 2V 2 1.5 V 4 125C 3 2 1 1V 0 0 0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) www.siliconix.com FaxBack 408-970-5600 2 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) Document Number: 71095 Pending—Rev. A, 09-Nov-99 Si1305EDL New Product Vishay Siliconix % (# 350 1.2 300 VGS = 1.8 V 1.0 C – Capacitance (pF) r DS(on) – On-Resistance ( ) #,' '(# *' & # )&&#( 1.4 0.8 0.6 VGS = 2.5 V 0.4 Ciss 250 200 Coss 150 Crss 100 VGS = 4.5 V 0.2 50 0 0 0 1 2 3 4 5 6 7 0 2 ID – Drain Current (A) 8 #,' '(# *' )#( $# "%&()& ( & 1.6 VDS = 4 V ID = 1 A r DS(on) – On-Resistance () (Normalized) V GS – Gate-to-Source Voltage (V) 6 VDS – Drain-to-Source Voltage (V) 8 6 4 2 0 0 1 2 3 4 VGS = 4.5 V ID = 1 A 1.2 0.8 0.4 0 –50 5 –25 Qg – Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ – Junction Temperature (C) $)&,& # $ $&+& $!( #,' '(# *' (,($,$)& $!( 1.0 10 r DS(on) – On-Resistance ( ) TJ = 150C I S – Source Current (A) 4 1 0.1 TJ = 25C 0.01 0.8 ID = 1 A 0.6 0.4 0.2 0 0.001 0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71095 Pending—Rev. A, 09-Nov-99 1.2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS – Gate-to-Source Voltage (V) www.siliconix.com FaxBack 408-970-5600 3 Si1305DL New Product Vishay Siliconix )-*''$) +( )-%*' %") Gate-Source Voltage vs. Gate-Current 1000 400 100 10 IG ( m A) IGSS ( m A) 300 200 1 IG (mA) @ 150C 0.1 IGSS (mA) @ T = 25C 0.01 100 IG (mA) @ 25C 0.001 0 0.0001 0 2 4 6 8 0.1 VGS – Gate-to-Source Voltage (v) 1 VGS – Gate-to-Source Voltage (v) '( %" %") Single Pulse Power 0.3 20 16 0.2 ID = 250 mA Power (W) V GS(th) Variance (V) 8 0.1 0.0 12 –0.1 TA = 25C 8 4 –0.2 –50 –25 0 25 50 75 100 125 150 0 10–3 10–2 10–1 TJ – Temperature (C) 1 10 100 600 Time (sec) %'#"!, '#" '$(!$) #&$ *$)!%$-)%-#!$) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 360C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 www.siliconix.com FaxBack 408-970-5600 4 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71095 Pending—Rev. A, 09-Nov-99 Si1305EDL New Product Vishay Siliconix !#' # # $ % " & %! (%!(!!% Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71095 Pending—Rev. A, 09-Nov-99 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.siliconix.com FaxBack 408-970-5600 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 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