BB301M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0824-0300 (Previous ADE-208-506A) Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143Rmod) Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 2 3 1 4 Notes: 1. Marking is “AW–”. 2. BB301M is individual type number of RENESAS BBFET. Rev.3.00 Aug 10, 2005 page 1 of 7 1. Source 2. Gate1 3. Gate2 4. Drain BB301M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Ratings 6 +6 –0 ±6 25 150 150 –55 to +150 VG2S ID Pch Tch Tstg Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS Min 6 +6 Typ — — Max — — Unit V V Test conditions ID = 200 µA, VG1S = VG2S = 0 IG1 = +10 µA, VG2S = VDS = 0 Gate2 to source breakdown voltage Gate1 to source cutoff current V(BR)G2SS IG1SS ±6 — — — — +100 V nA IG2 = ±10 µA, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 Gate2 to source cutoff current Gate1 to source cutoff voltage IG2SS VG1S(off) — 0.4 — — ±100 1.0 nA V VG2S = ±5 V, VG1S = VDS = 0 Gate2 to source cutoff voltage VG2S(off) 0.4 — 1.0 V Drain current ID(op) 10 15 20 mA VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 100 kΩ Forward transfer admittance |yfs| 15 20 — mS Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Ciss Coss Crss PG NF 2.2 0.9 — 22 — 3.0 1.2 0.018 26 1.3 3.9 1.6 0.04 — 1.9 pF pF pF dB dB VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 100 kΩ, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S =4 V, RG = 100 kΩ f = 1 MHz VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 100 kΩ, f = 200 MHz Rev.3.00 Aug 10, 2005 page 2 of 7 VDS = 5 V, VG2S = 4 V ID = 100 µA VDS = 5 V, VG1S = 5 V ID = 100 µA BB301M Main Characteristics Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 VG1 RG Gate 2 Gate 1 Drain Source A ID Equivalent Circuit Gate 2 Drain Gate 1 Source Application Circuit VDS = 5 V VAGC = 4 to 0.3 V BBFET Input RG VGG = 5 V Rev.3.00 Aug 10, 2005 page 3 of 7 RFC Output BB301M Typical Output Characteristics 30 25 150 100 50 20 15 10 5 RG 50 100 150 0 200 1 2 Ω k 82 k Ω 0 10 k Ω 0 2 1 0kΩ 15 k Ω 180 0 kΩ = 22 3 4 5 Drain to Source Voltage VDS (V) Drain Current vs. Gate2 to Source Voltage Drain Current vs. Gate1 Voltage 20 120 k Ω 150 k Ω 180 k Ω R G = 220 k Ω 10 5 12 V 100 k Ω 15 16 3 82 k Ω VDS = 5 V RG = 82 kΩ V Ω k Ω 68 k Drain Current ID (mA) 20 56 47 kΩ 25 4 0 Ambient Temperature Ta (°C) Drain Current ID (mA) VG2S = 4 V VG1 = VDS 47 5 k 68 6 k Ω k Ω Ω 200 Drain Current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 2V 8 4 VG2S = 1 V VDS = VG1 = 5 V 0 1 2 3 0 5 4 4 5 Drain Current vs. Gate1 Voltege Drain Current vs. Gate1 Voltege 20 V Drain Current ID (mA) VDS = 5 V RG = 100 kΩ 3 V 4 Drain Current ID (mA) 3 Gate1 Voltage VG1 (V) 12 8 2V 4 0 2 Gate2 to Source Voltage VG2S (V) 20 16 1 VG2S = 1 V 1 2 3 4 Gate1 Voltage VG1 (V) Rev.3.00 Aug 10, 2005 page 4 of 7 16 VDS = 5 V RG = 150 kΩ 12 3V 4V 8 2V 4 VG2S = 1 V 5 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 BB301M Forward Transfer Admittance vs. Gate1 Voltage 30 VDS = 5 V RG = 82 kΩ f = 1 kHz 25 4V 3V 20 15 2V 10 5 VG2S = 1 V 0 1 2 3 4 5 Forward Transfer Admittance |yfs| (mS) Forward Transfer Admittance |yfs| (mS) Forward Transfer Admittance vs. Gate1 Voltage 30 25 3V 15 2V 10 5 VG2S = 1 V 0 1 2 3 4 5 Gate1 Voltage VG1 (V) Forward Transfer Admittance vs. Gate1 Voltage Power Gain vs. Gate Resistance 30 20 VDS = 5 V RG = 150 kΩ f = 1 kHz 16 4V Power Gain PG (dB) Forward Transfer Admittance |yfs| (mS) 4V 20 Gate1 Voltage VG1 (V) 3V 12 2V 8 4 25 20 15 10 5 VG2S = 1 V 0 1 2 3 4 0 10 5 Gate1 Voltage VG1 (V) 50 100 200 500 1000 30 VDS = 5 V VG1= 5 V VG2S = 4 V f = 200 MHz Power Gain PG (dB) 25 2 1 0 10 20 Power Gain vs. Drain Current 4 3 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz Gate Resistance RG (kΩ) Noise Figure vs. Gate Resistance Noise Figure NF (dB) VDS = 5 V RG = 100 kΩ f = 1 kHz 20 50 100 200 500 1000 Gate Resistance RG (kΩ) Rev.3.00 Aug 10, 2005 page 5 of 7 20 15 10 5 0 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 200 MHz 5 10 15 20 25 Drain Current ID (mA) 30 BB301M Drain Current vs. Gate Resistance Noise Figure vs. Drain Current 30 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 200 MHz 3 25 Drain Current ID (mA) Noise Figure NF (dB) 4 2 1 0 5 10 15 20 25 20 15 10 5 0 10 30 Drain Current ID (mA) 50 100 200 500 1000 Input Capacitance vs. Gate2 to Source Voltage 4 60 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = 100 kΩ f = 200 MHz 50 40 Input Capacitance Ciss (pF) Gain Reduction GR (dB) 20 Gate Resistance RG (kΩ) Gain Reduction vs. Gate2 to Source Voltage 30 20 10 0 VDS = 5 V VG1 = 5 V VG2S = 4 V 1 2 3 4 Gate2 to Source Voltage VG2S (V) Rev.3.00 Aug 10, 2005 page 6 of 7 5 3 2 1 0 VDS = 5 V VG1 = 5 V RG = 100 kΩ f = 1 MHz 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) BB301M Package Dimensions JEITA Package Code RENESAS Code SC-61AA Package Name PLSP0004ZA-A MASS[Typ.] MPAK-4 / MPAK-4V D 0.013g A e e2 b1 Q c B B E HE Reference Symbol L A LP L1 A A3 x M S b A e2 A2 e I1 A b5 S b b2 e1 A1 y S b1 b3 c1 c c1 I1 c b4 A-A Section B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.55 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.62 0.4 0.6 0.13 0.11 1.5 0.95 0.85 2.8 Max 1.3 0.1 1.2 0.5 0.7 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.05 0.55 0.75 1.95 1.05 0.3 Ordering Information Part Name BB301MAW-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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