2SK2570 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G1019-0200 (Previous: ADE-208-574) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5 V gate drive devices. • Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 G 1. Source 2. Gate 3. Drain 2 S Note: Marking is “ZL–” Rev.2.00 Sep 07, 2005 page 1 of 6 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID ID(pulse)*1 Pch Tch Tstg Ratings 20 ±10 0.2 0.4 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 20 ±10 Typ — — Max — — Unit V V IDSS IGSS — — — — 1.0 ±5.0 µA µA VDS = 20 V, VGS = 0 VGS = ±6.5 V, VDS = 0 Gate to source cutoff voltage VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Notes: 2. Pulse test |yfs| Ciss Coss Crss td(on) tr td(off) tf 0.5 — — 0.22 — — — — — — — — 0.8 1.3 0.35 45 33 9.6 20 60 240 140 1.5 1.1 2.2 — — — — — — — — V Ω Ω S pF pF pF ns ns ns ns ID = 10 µA, VDS = 5 V ID = 100 mA, VGS = 4 V *2 ID = 40 mA, VGS = 2.5 V *2 ID = 100 mA, VDS = 10 V *2 Zero gate voltage drain current Gate to source leak current Rev.2.00 Sep 07, 2005 page 2 of 6 Test Conditions ID = 10 µA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 5 V, ID = 100 mA, RL = 100 Ω 2SK2570 Main Characteristics Maximum Safe Operation Area 200 5 2 Drain Current ID (A) Channel Dissipation Pch (mW) Maximum Channel Dissipation Curve 150 100 50 0 50 100 150 Ambient Temperature 200 Typical Output Characteristics Typical Transfer Characteristics 0.20 2V 10 V 5V 2.5 V 0.12 1.8 V 0.08 VGS = 1.6 V 0.04 0.16 75°C 4 6 8 0.08 0.04 Pulse Test 0.4 0.3 0.2 ID = 0.2 A 0.1 0 0.1 A 0.05 A 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 0 10 Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Tc = –25°C VDS = 10 V Pulse Test Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 2 25°C 0.12 Pulse Test 0 50 100 Drain to Source Voltage VDS (V) Drain Current ID (A) Drain Current ID (A) 1 ms PW 0.2 (1 10 m = DC sh s ot 0.1 O ) pe Operation in ra t io 0.05 this area is n limited by RDS(on) 0.02 Ta = 25°C 0.01 1 shot 0.05 0.2 0.5 1 2 5 10 20 0.5 Ta (°C) 0.20 0.16 1 0.5 1.0 1.5 2.0 2.5 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 VGS = 2.5 V 1 4V 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 Drain Current ID (A) 0.5 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 2.5 ID = 0.2 A 2.0 1.5 0.05, 0.1A VGS = 2.5 V 1.0 0.05, 0.1, 0.2 A 4V 0.5 Pulse Test 0 Ð40 0 40 80 120 160 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK2570 0.2 Tc = –25°C 0.1 25°C 0.05 75°C 0.02 0.01 VDS = 10 V Pulse Test 0.005 0.002 0.005 0.01 0.02 0.05 0.1 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Switching Characteristics 0.2 500 td(off) Switching Time t (µs) 200 Capacitance C (pF) 0.5 Case Temperature TC (°C) 500 100 Ciss 50 20 Coss 10 Crss 5 VGS = 0 f = 1 MHz 2 1 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage 0.20 Reverse Drain Current IDR (A) 1 0.16 0.12 VGS = 0 5V 0.08 0.04 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage Rev.2.00 Sep 07, 2005 page 4 of 6 1.6 2.0 VSD (V) 200 tf 100 tr 50 td(on) 20 10 5 0.05 VGS = 5 V, VDD = 10 V PW = 5 µs, duty < 1 % 0.1 Drain Current 0.2 ID (A) 0.5 2SK2570 Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 5V 50 Ω VDD = 10 V 10% 90% td(on) Rev.2.00 Sep 07, 2005 page 5 of 6 10% tr 90% td(off) tf 2SK2570 Package Dimensions JEITA Package Code RENESAS Code SC-59A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A D MASS[Typ.] 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SK2570ZL-TL-E 2SK2570ZL-TR-E Quantity 3000 pcs 3000 pcs Shipping Container Taping Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. 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