Transistors SMD Type NPN Transistors 2SD1745 TO-252 ■ Features Unit: mm +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 3 .8 0 ● Satisfactory linearity of foward current transfer ratio hFE +0.1 2.30 -0.1 +0.8 0.50 -0.7 2.3 0.60-+ 0.1 0.1 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 ● Complementary to 2SB1175 +0.15 0.50 -0.15 ● Low collector to emitter saturation voltage VCE(sat) ● Large collector current IC +0.15 4 .60 -0.15 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Rating s Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 130 Collector - Emitter Voltage VCEO 80 Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 4 Collector Current - Pulse ICP 8 Collector Power Dissipation Tc=25°C 15 PC Ta=25°C Junction Temperature Storage Temperature Range 1.3 TJ 150 Tstg -55 to 150 Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 130 Collector- emitter breakdown voltage VCEO Ic= 10 mA，IB= 0 80 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 7 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 10 Emitter cut-off current IEBO VEB= 6V , IC=0 50 V Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=150 mA 0.5 Base - emitter saturation voltage VBE(sat) IC=3 A, IB=150 mA 1.5 DC current gain hFE Turn-ON Time ton Storage Time tstg Fall Time tf Transition frequency fT VCE= 2V, IC= 100 mA 45 VCE= 2V, IC= 1 A 90 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V VCE= 10V, IC= 500mA,f=10MHz Unit uA V 260 0.5 2.5 us 0.15 30 MHz ■ Classification of hfe(2) Type 2SD1745-Q 2SD1745-P Range 90-180 130-260 www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD1745 ■ Typical Characterisitics IC — VCE 10 5 6 140mA 120mA 100mA 5 60mA 4 40mA 3 20mA 2 10mA 1 (2) 40 60 0 80 100 120 140 160 0 2 4 IC/IB=20 30 10 3 TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3000 3 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.1 0.3 1 3 Switching time ton,tstg,tf (µs) 30 10 30 100 10 3 Collector to base voltage VCB (V) 1 3 10 VCE=10V f=10MHz TC=25˚C 300 100 30 10 3 1 0.01 0.03 0.3 1 3 10 Area of safe operation (ASO) Non repetitive pulse TC=25˚C 30 tf 0.3 0.1 100 tstg 1 ton 0.1 0.01 0.3 Collector current IC (A) 0.03 3 www.kexin.com.cn 0.1 Collector current IC (A) 10 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 30 100 10 0.001 0.01 0.03 ton, tstg, tf — IC 100 300 3 0.01 Collector current IC (A) 1000 1 0.03 1000 1 0.01 0.03 10 IE=0 f=1MHz TC=25˚C 0.3 –25˚C 0.1 3000 Cob — VCB 3000 25˚C 0.3 10000 VCE=2V 1000 10000 Collector output capacitance Cob (pF) 12 TC=100˚C 1 fT — I C 10000 Collector current IC (A) 2 10 3 hFE — IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) VBE(sat) — IC 1 0.1 8 IC/IB=20 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 100 6 Transition frequency fT (MHz) 20 10 0.003 Collector current IC (A) 0 TC=25˚C IB=300mA 7 Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) Without heat sink (PC=1.3W) (1) 15 0 VCE(sat) — IC 8 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 20 10 ICP t=10ms IC 3 1ms 300ms 1 0.3 0.1 0.03 0 1 2 3 4 Collector current IC (A) 5 0.01 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Transistors SMD Type NPN Transistors 2SD1745 ■ Typical Characterisitics Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) www.kexin.com.cn 3