JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistor 2SA1371 TO – 92M TO – 92MOD TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z High Breakdown Voltage z Small Reverse Transition Capacitance and High Frequency 2. COLLECTOR 3. EMITTER 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V -0.1 A 1 W Thermal Resistance From Junction To Ambient 125 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ IC Collector Current PC Collector Power Dissipation RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -10µA,IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 -5 V Collector cut-off current ICBO VCB=-200V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA DC current gain hFE VCE=-10V, IC=-10mA 40 320 Collector-emitter saturation voltage VCE(sat) IC=-20mA,IB=-2mA -0.6 V Base-emitter saturation voltage VBE (sat) IC=-20mA,IB=-2mA -1 V Collector output capacitance Cob Transition frequency 5 VCB=-30V,IE=0, f=1MHz fT VCE=-30V,IC=-10mA pF 100 MHz CLASSIFICATION OF hFE RANK C D E F RANGE 40-80 60-120 100-200 160-320 A,Dec,2010