RENESAS RJK1535DPE

RJK1535DPJ, RJK1535DPE, RJK1535DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0479-0200
Rev.2.00
Jan.14.2005
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
LDPAK
D
4
G
4
4
1
2
3
1
2
1. Gate
2. Drain
3. Source
4. Drain
3
RJK1535DPE
2
3
RJK1535DPF
RJK1535DPJ
1
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.2.00, Jan.14.2005, page 1 of 7
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
150
±30
40
100
40
100
30
67.5
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
RJK1535DPJ, RJK1535DPE, RJK1535DPF
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
RDS(on)
Min
150
—
—
3.0
13
—
Typ
—
—
—
—
22
0.045
Max
—
1
±0.1
4.5
—
0.052
Unit
V
µA
µA
V
S
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
1420
300
42
30
170
70
80
35
9
16
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
VDF
trr
—
—
1.0
110
1.5
—
V
ns
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Qrr
—
0.5
—
µC
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Rev.2.00, Jan.14.2005, page 2 of 7
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
Test conditions
ID = 10 mA, VGS = 0
VDS = 150 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 20 A, VDS = 10 V Note4
ID = 20 A, VGS = 10 VNote4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 20 A
VGS = 10 V
RL = 3.75 Ω
Rg = 10 Ω
VDD = 120 V
VGS = 10 V
ID = 40 A
IF = 40 A, VGS = 0 Note4
IF = 40 A, VGS = 0
diF/dt = 100 A/µs
RJK1535DPJ, RJK1535DPE, RJK1535DPF
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
Ta = 25°C
300
10
µs
1 m 100
µ
s
s
100
ID (A)
120
30
10
Drain Current
Channel Dissipation
Pch (W)
160
80
40
3 Operation in this
area is limited by
1 RDS(on)
PW = 10 ms
(1shot)
0.3
0.1
DC Operation
(Tc = 25°C)
0.03
0.01
0
50
100
150
Case Temperature
1
200
Tc (°C)
Typical Output Characteristics
50
10 V
Typical Transfer Characteristics
50
Pulse Test
7.5 V
VDS = 10 V
Pulse Test
40
7V
30
6.5 V
20
6V
10
VGS = 5.5 V
4
8
12
Drain to Source Voltage
ID (A)
40
Drain Current
Drain Current
ID (A)
8V
0
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage
VDS(on) (V)
Pulse Test
6
4
ID = 40 A
2
20 A
10 A
0
4
8
12
Gate to Source Voltage
Rev.2.00, Jan.14.2005, page 3 of 7
16
VGS (V)
20
30
20
10
Tc = 75°C
0
16
20
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
8
100 300 1000
30
3
10
Drain to Source Voltage VDS (V)
25°C
−25°C
2
4
6
Gate to Source Voltage
8
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
VGS = 10 V
0.5
0.2
0.1
0.05
0.02
Pulse Test
0.01
1
3
10
30
Drain Current
100 300
ID (A)
1000
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.2
VGS = 10 V
Pulse Test
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
RJK1535DPJ, RJK1535DPE, RJK1535DPF
0.16
0.12
0.08
ID = 40 A
20 A
10 A
0.04
0
−25
0
25
50
75
Case Temperature
100 125
150
100
Tc = −25°C
30
10
3
25°C
1
75°C
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
Tc (°C)
100000
500
30000
200
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
100
50
20
10
5
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
100
ID (A)
VGS = 0
f = 1 MHz
3000
Ciss
1000
300
Coss
100
Crss
30
10
1
0
3
10
30
100 300 1000
Reverse Drain Current IDR (A)
VDS
8
60
4
VDD = 120 V
60 V
30 V
0
8
16
Gate Charge
24
32
Qg (nC)
Rev.2.00, Jan.14.2005, page 4 of 7
0
40
Switching Time t (ns)
120
12
VDD = 30 V
60 V
120 V
VGS (V)
180
Gate to Source Voltage
VGS
100
150
VDS (V)
Switching Characteristics
10000
16
ID = 40 A
50
Drain to Source Voltage
Dynamic Input Characteristics
240
VDS (V)
30
10
Typical Capacitance vs.
Drain to Source Voltage
1
Drain to Source Voltage
3
Drain Current
Body-Drain Diode Reverse
Recovery Time
2
1
VGS = 10 V, VDD = 75 V
PW = 5 µs, duty < 1 %
RG = 10 Ω
1000
tr
tf
tf
td(off)
100
td(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
RJK1535DPJ, RJK1535DPE, RJK1535DPF
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current
IDR (A)
50
40
30
20
10
10 V
VGS = 0 V
5V
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
-25
2.0
0
VSD (V)
25
50
75
Case Temperature
100 125 150
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
e
0.0 puls
t
ho
1s
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
V DD
= 75 V
Vout
10%
10%
90%
td(on)
Rev.2.00, Jan.14.2005, page 5 of 7
tr
10%
90%
td(off)
tf
RJK1535DPJ, RJK1535DPE, RJK1535DPF
Package Dimensions
• RJK1535DPJ
As of January, 2003
Unit: mm
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
(1.4)
4.44 ± 0.2
10.2 ± 0.3
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
0.4 ± 0.1
Package Code
JEDEC
JEITA
Mass (reference value)
LDPAK (L)
—
—
1.40 g
• RJK1535DPE
As of January, 2003
Unit: mm
(1.5)
10.0
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
7.8
6.6
1.3 ± 0.15
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.2.00, Jan.14.2005, page 6 of 7
LDPAK (S)-(1)
—
—
1.30 g
RJK1535DPJ, RJK1535DPE, RJK1535DPF
• RJK1535DPF
As of January, 2003
Unit: mm
2.49 ± 0.2
(2.3)
10.0
7.8
7.0
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
7.8
6.6
1.3 ± 0.15
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Package Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
Ordering Information
Part Name
RJK1535DPE-LE
Quantity
1000 pcs
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00, Jan.14.2005, page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0