IXSH25N120AU1 IGBT with Diode "S" Series - Improved SCSOA Capability C IC25 = 50 A VCES = 1200 V VCE(sat) = 4.0 V G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES 1200 1200 V V Continuous ±20 V VGEM Transient ±30 V IC25 IC90 TC = 25°C TC = 90°C 50 25 A A ICM TC = 25°C, 1 ms 80 A SSOA VGE = 15 V, TJ = 125°C, RG = 33 W ICM = 50 A (RBSOA) Clamped inductive load, L = 100 µH tsc TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 33W PC TC = 25°C TJ TJM TSTG Md µs 200 W -55 ... +150 150 -55 ... +150 °C °C °C 1.15/10 Nm/lb-in. 6 Max. Lead Temperature for Soldering (1.6mm from case for 10s) Symbol Test Conditions BVCES IC = 4 mA, VGE = 0 V VGE(th) IC = 2.5 mA, VCE = VGE ICES VCE = 0.8 VCES , VGE= 0 V TJ = 25°C Note 2 TJ = 125°C VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V °C Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 1200 4 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g 300 E C Features 10 Weight IGES G @ 0.8 VCES Mounting torque TO-247 AD • High frequency IGBT with guaranteed short circuit SOA capability. • IGBT with anti-parallel diode in one package • 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • DC choppers V 8 V 500 mA 8 mA + 100 nA 4.0 V Advantages • Saves space (two devices in one package) • Easy to mount (isolated mounting hole) • Reduces assembly time and cost • Operates cooler • Easier to assemble 94521C(7/00) 1-2 IXSH25N120AU1 Symbol Test Conditions (T J = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs IC = IC90, VCE = 10 V, Pulse test, t < 300 µs, duty cycle < 2 % 10 IC(on) VGE = 15V, VCE = 10 V C ies VCE = 25 V, VGE = 0 V, f = 1 MHz 17 S 140 A 2850 pF Coes 210 pF C res 50 pF 120 nC Qge 30 nC Qgc 50 nC Qg IC = Ic90, VGE = 15 V, VCE = 0.5 VCES TO-247 AD (IXSH) Outline td(on) Inductive load, TJ = 25°C 100 ns Dim. Millimeter Min. Max. t ri IC 200 ns td(off) RG = 18 W, VCLAMP = 0.8 VCES 450 ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 tfi Note 1 650 ns C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 tc 800 ns E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 Eoff 9.6 mJ G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 = IC90, VGE = 15 V, L = 100µH td(on) Inductive load, TJ = 125°C 100 ns t ri IC 200 ns E(on) RG = 18 W 1.8 mJ td(off) VCLAMP = 0.8 VCES 450 ns tfi Note 1 900 ns 1200 ns 17 mJ = IC90, VGE = 15 V, L = 100µH tc Eoff RthJC L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 0.63 K/W RthCK 0.25 Reverse Diode (FRED) VF Inches Min. Max. IF Characteristic Values (TJ = 25ºC unless otherwise specified) Min. Typ. Max. = IC90, VGE = 0V Pulse test, t< 300 µs, duty cycle < 2% TJ = 125ºC t rr IF = 1A; di/dt = -100/µs; VR = 30V; TJ = 25ºC IRM IF = IC90, VGE = 0V, -diF/dt = 240 A/µs t rr TJ = 100ºC, VR = 540V RthJC K/W 40 2.5 V 2.2 V 60 ns 16 A 300 ns 1.0 K/W Notes: 1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or Rg values. 2) Device must be heatsunk for high temperature measurements to avoid thermal runaway. © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2