IXYS FMM60-02TF

Advance Technical Information
Trench Gate HiperFET
N-Channel Power MOSFET
FMM60-02TF
3
3
RDS(on)
trr(typ)
T1
55
Phase Leg Topology
VDSS
ID25
= 200V
= 33A
≤ 40mΩ
Ω
= 82ns
4
4
T2
1
1
ISOPLUS i4-PakTM
22
Symbol
Test Conditions
Maximum Ratings
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
VISOLD
50/60HZ, RMS, t = 1min, leads-to-tab
2500
~V
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
°C
°C
FC
Mounting force
20..120 / 4.5..27
N/lb.
1
Isolated Tab
5
Features
z
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
200
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
200
V
VGSM
Transient
± 30
V
ID25
TC = 25°C
33
A
IDM
TC = 25°C, pulse width limited by TJM
150
A
IA
TC = 25°C
5
A
EAS
TC = 25°C
1
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
PD
Maximum Ratings
TC = 25°C
125
W
z
z
z
z
Advantages
z
z
z
z
z
Symbol
Test Conditions
CP
Coupling capacitance between shorted
pins and mounting tab in the case
dS ,dA
dS ,dA
pin - pin
pin - backside metal
Characteristic Values
Min.
Typ.
Max.
40
pF
z
z
mm
mm
z
z
z
Weight
© 2008 IXYS CORPORATION, All rights reserved
9
Low gate drive requirement
High power density
Fast intrinsic rectifier
Low drain to ground capacitance
Fast switching
Applications
z
1.7
5.5
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
Low QG
Low Drain-to-Tab capacitance
Low package inductance
g
DC and AC motor drives
UPS, solar and wind power inverters
Synchronous rectifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
DS100048(09/08)
FMM60-02TF
Symbol
Test Conditions2
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
200
VGS(th)
VDS = VGS, ID = 250μA
2.5
IGSS
VGS = ±20 V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 30A, Note 1
gfs
VDS = 10V, ID = 60A, Note 1
V
4.5
V
± 200
nA
5 μA
250 μA
TJ = 125°C
32
40 mΩ
62
S
3700
pF
520
pF
37
pF
40
Ciss
Coss
VGS = 0V, VDS = 25 V, f = 1 MHz
Crss
td(on)
Resistive Switching Times
39
ns
tr
VGS = 10V, VDS = 0.5 z VDSS, ID = 30A
46
ns
td(off)
RG = 5Ω (External)
75
ns
tf
42
ns
Qg(on)
90
nC
33
nC
21
nC
Qgs
VGS= 10V, VDS = 0.5
z
VDSS, ID = 30A
Qgd
Ref: IXYS CO 0077 R0
1.0 °C/W
RthJC
RthCS
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions3
IS
VGS = 0V
ISM
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
33
A
Repetitive, pulse width limited by TJM
150
A
VSD
IF = 60A, VGS = 0V, Note 1
1.5
V
trr
IRM
IF = 25A, -di/dt = 100A/μs
QRM
ISOPLUS i4-PakTM Outline
VR = 100V, VGS = 0V
82
15.3
ns
A
0.63
μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2