Advance Technical Information Trench Gate HiperFET N-Channel Power MOSFET FMM60-02TF 3 3 RDS(on) trr(typ) T1 55 Phase Leg Topology VDSS ID25 = 200V = 33A ≤ 40mΩ Ω = 82ns 4 4 T2 1 1 ISOPLUS i4-PakTM 22 Symbol Test Conditions Maximum Ratings TJ TJM Tstg -55 ... +150 150 -55 ... +150 °C °C °C VISOLD 50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 300 260 °C °C FC Mounting force 20..120 / 4.5..27 N/lb. 1 Isolated Tab 5 Features z Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 200 V VGSM Transient ± 30 V ID25 TC = 25°C 33 A IDM TC = 25°C, pulse width limited by TJM 150 A IA TC = 25°C 5 A EAS TC = 25°C 1 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD Maximum Ratings TC = 25°C 125 W z z z z Advantages z z z z z Symbol Test Conditions CP Coupling capacitance between shorted pins and mounting tab in the case dS ,dA dS ,dA pin - pin pin - backside metal Characteristic Values Min. Typ. Max. 40 pF z z mm mm z z z Weight © 2008 IXYS CORPORATION, All rights reserved 9 Low gate drive requirement High power density Fast intrinsic rectifier Low drain to ground capacitance Fast switching Applications z 1.7 5.5 Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance g DC and AC motor drives UPS, solar and wind power inverters Synchronous rectifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies DS100048(09/08) FMM60-02TF Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20 V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 30A, Note 1 gfs VDS = 10V, ID = 60A, Note 1 V 4.5 V ± 200 nA 5 μA 250 μA TJ = 125°C 32 40 mΩ 62 S 3700 pF 520 pF 37 pF 40 Ciss Coss VGS = 0V, VDS = 25 V, f = 1 MHz Crss td(on) Resistive Switching Times 39 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 30A 46 ns td(off) RG = 5Ω (External) 75 ns tf 42 ns Qg(on) 90 nC 33 nC 21 nC Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 30A Qgd Ref: IXYS CO 0077 R0 1.0 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions3 IS VGS = 0V ISM Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 33 A Repetitive, pulse width limited by TJM 150 A VSD IF = 60A, VGS = 0V, Note 1 1.5 V trr IRM IF = 25A, -di/dt = 100A/μs QRM ISOPLUS i4-PakTM Outline VR = 100V, VGS = 0V 82 15.3 ns A 0.63 μC Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2