IXYS IXTP10N60PM

Preliminary Technical Information
PolarHVTM
Power MOSFET
IXTP 10N60PM
VDSS
ID25
RDS(on)
(Electrically Isolated Tab)
= 600 V
=
5 A
Ω
≤ 740 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
600
600
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
OVERMOLDED TO-220
(IXTP...M) OUTLINE
G
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
dv/dt
PD
5
30
A
A
10
20
500
A
mJ
mJ
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
10
V/ns
TC = 25°C
50
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
G = Gate
S = Source
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
z
z
z
1.13/10 Nm/lb.in.
Weight
4
D = Drain
Features
z
TL
TSOLD
Isolated Tab
DS
Plastic overmolded tab for electrical
isolation
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
g
Advantages
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 μA
600
VGS(th)
VDS = VGS, ID = 100μA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 125°C
VGS = 10 V, ID = 5 A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
z
z
Easy to mount
Space savings
High power density
V
5.0
V
±100
nA
5
50
μA
μA
740 m Ω
DS99450E(04/06)
IXTP 10N60PM
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 5 A, pulse test
6
Ciss
11
S
1610
pF
165
pF
Crss
14
pF
td(on)
20
ns
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
24
ns
td(off)
RG = 10 Ω (External)
55
ns
18
ns
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 5 A
Qgd
32
nC
11
nC
10
nC
RthJS
2.5
Source-Drain Diode
°C/W
ISOLATED TO-220 (IXTP...M)
1
2
3
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
10
A
ISM
Repetitive
30
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 9 A, -di/dt = 100 A/μs
VR = 100V
500
ns
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2