SPLV2.8 Series 2.8V 40A TVS Array

TVS Diode Arrays (SPA™ Family of Products)
Lightning Surge Protection - SPLV2.8 Series
SPLV2.8 Series 2.8V 40A TVS Array
RoHS
Pb GREEN
The SPLV2.8 was designed to protect low voltage, CMOS
devices from ESD and lightning induced transients.
There is a compensating diode in parallel with the low
voltage TVS to protect one unidirectional line or a high
speed data pair when two devices are paired together.
These robust structures can safely absorb repetitive ESD
strikes at ±30kV (contact discharge) per the IEC61000-4-2
standard and each structure can safely dissipate up to 40A
(IEC61000-4-5, tP=8/20μs) with very low clamping voltages.
Pinout
Features
3
t &4%*&$
±30kV contact, ±30kV air
t -PXDBQBDJUBODFPGQ'
per line (Pin 2 to 1)
t &'5*&$"
(5/50ns)
t -PXMFBLBHFDVSSFOUPG
1μA (MAX) at 2.8V
t -JHIUOJOH*&$
40A (8/20μs)
t 4NBMM405+&%&$
TO-236) package saves
board space
2
1
Functional Block Diagram
Applications
3
t &UIFSOFU
t "OBMPH*OQVUT
t 8"/-"/&RVJQNFOU
t #BTF4UBUJPOT
t 4XJUDIJOH4ZTUFNT
t %FTLUPQT4FSWFSTBOE
Notebooks
1
2
Application Example
NC
RJ-45
Connector
J1
Ethernet
PHY
J8
NC
See Application Example Detail section on page 135 for more information
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.
139
Revision: March 20, 2012
SPLV2.8 Series
SPLV2.8
Description
TVS Diode Arrays (SPA™ Family of Products)
Lightning Surge Protection - SPLV2.8 Series
Electrical Characteristics (TOP = 25°C)
Parameter
Symbol
Test Conditions
VRWM
IR≤1μA
Reverse Breakdown Voltage
VBR
IT=2μA
3.0
V
Snap Back Voltage
VSB
IT=50mA
2.8
V
Reverse Leakage Current
ILEAK
VR=2.8V (Pin 2 or 3 to 1)
Reverse Standoff Voltage
1
Clamping Voltage
ESD Withstand Voltage1
VESD
1
V
1
μA
V
IPP=24A, tP=8/20μs (Pin 3 to 1)
8.3
12.5
V
IPP=5A, tP=8/20μs (Pin 2 to 1)
7.0
8.5
V
IPP=24A, tP=8/20μs (Pin 2 to 1)
13.9
15.0
V
(VC2 - VC1) / (IPP2 - IPP1) (Pin 2 to 1)
0.4
Ω
IEC61000-4-2 (Contact)
±30
kV
IEC61000-4-2 (Air)
±30
kV
VR=0V, f=1MHz (Pin 2 to 1)
CD
Diode Capacitance
Units
2.8
7.0
Clamping Voltage1
RDYN
Max
5.7
VC
Dynamic Resistance
Typ
IPP=5A, tP=8/20μs (Pin 3 to 1)
Clamping Voltage1
Clamping Voltage1
Min
2.0
2.5
pF
Note: 1Parameter is guaranteed by design and/or device characterization.
Absolute Maximum Ratings
Rating
Units
Peak Pulse Power (tP=8/20μs)
600
W
Peak Pulse Current (tP=8/20μs)
40
A
Operating Temperature
-40 to 85
ºC
Storage Temperature
-60 to 150
ºC
4.0
3.5
Capacitance (pF)
Parameter
Figure 1: Capacitance vs. Reverse Voltage
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
DC Bias (V)
Figure 3: Pulse Waveform
Figure 2: Clamping Voltage vs. IPP
110%
14
100%
90%
10
Percent of IPP
Clamping Voltage-VC (V)
12
8
6
4
80%
70%
60%
50%
40%
30%
20%
2
10%
0%
0.0
0
0
5
10
15
20
25
Peak Pulse Current-IPP (A)
SPLV2.8 Series
5.0
10.0
15.0
20.0
25.0
30.0
Time (μs)
140
Revision: March 20, 2012
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.
TVS Diode Arrays (SPA™ Family of Products)
Lightning Surge Protection - SPLV2.8 Series
Application Example Detail
Product Characteristics
Protection of one unidirectional line
Protection of one unidirectional data line is realized by
connecting pin 3 to the protected line, and pins 1 and 2 to
GND. In this configuration, the device presents a maximum
loading capacitance of tens of picofarads. During positive
transients, the internal TVS diode will conduct and steer
current from pin 3 to 1 (GND), clamping the data line at or
below the specified voltages for the device (see Electrical
Characteristics section). For negative transients, the internal
compensating diode is forward biased, steering the current
from pin 2 (GND) to 3.
Lead Plating
Matte Tin
Lead Material
Copper Alloy
Lead Coplanarity
0.0004 inches (0.102mm)
Substitute Material
Silicon
Body Material
Molded Epoxy
Flammability
UL 94 V-0
SPLV2.8
Data Line
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-13.
Soldering Parameters
D1
Reflow Condition
Pb – Free assembly
NC
Pre Heat
D2
Low capacitance protection of one high speed data pair
Low capacitance protection of a high-speed data pair is
realized by connecting two devices in antiparallel. As shown,
pin 1 of the first device is connected to D1 and pin 2 is
connected to D2. Additionally, pin 2 of the second device is
connected to D1 and pin 1 is connected to D2. Pin 3 must be
NC (or not connected) for both devices. When the potential
on D1 exceeds the potential on D2 (by the rated standoff
voltage), pin 2 on the second device will steer current into
pin 1. The compensating diode will conduct in the forward
direction steering current into the avalanching TVS diode
which is operating in the reverse direction. For the opposite
transient, the first device will behave in the same manner. In
this two device arrangement, the total loading capacitance is
two times the rated capacitance from pin 2 to pin 1 which will
typically be much less than 10pF making it suitable for highspeed data pair such as 10/100/1000 Ethernet.
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
- Time (min to max) (ts)
60 – 180 secs
Average ramp up rate (Liquidus) Temp
(TL) to peak
3°C/second max
TS(max) to TL - Ramp-up Rate
3°C/second max
- Temperature (TL) (Liquidus)
Reflow
- Temperature (tL)
60 – 150 seconds
Peak Temperature (TP)
260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
Time 25°C to peak Temperature (TP)
8 minutes Max.
Do not exceed
260°C
tP
Temperature
TP
NC
RJ-45
Connector
J1
217°C
Critical Zone
TL to TP
Ramp-up
TL
TS(max)
tL
Ramp-do
Ramp-down
Preheat
TS(min)
tS
Ethernet
PHY
25
time to peak temperature
Time
J8
NC
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.
141
Revision: March 20, 2012
SPLV2.8 Series
TVS Diode Arrays (SPA™ Family of Products)
Lightning Surge Protection - SPLV2.8 Series
Package Dimensions — SOT-23
b
Package
3
Pins
SOT23-3
3
JEDEC
TO-236
Millimetres
E1 E
Max
Min
Max
A
0.89
1.12
0.035
0.044
A1
0.01
0.1
0.0004
0.004
b
0.3
0.5
0.012
0.020
c
0.08
0.2
0.003
0.008
D
2.8
3.04
0.110
0.120
E
2.1
2.64
0.083
0.104
E1
1.2
1.4
0.047
0.055
2
1
Recommended Pad Layout
e
e1
D
M
A
P
A1
C
N
O
L1
Inches
Min
e
0.95 BSC
0.038 BSC
e1
1.90 BSC
0.075 BSC
L1
0.54 REF
0.021 REF
M
2.29
.90
N
0.95
0.038
O
0.78
0.30 TYP
P
0.78
0.30 TYP
Part Marking System
Part Numbering System
U 2.8
SP LV2.8 H T G
Silicon Protection
Array (SPATM)
Family of
TVS Diode Arrays
U2.8
G= Green
T= Tape & Reel
Package
U = SPLV2.8
Ordering Information
H = SOT23-3
Series
Voltage Level
Product Series
Part Number
Package
Marking
Min. Order Qty.
SPLV2.8HTG
SOT23-3
U2.8
3000
Embossed Carrier Tape & Reel Specification — SOT23-3 Package
P0
P1
D1
Symbol
E
D
F
W
P
.99
.46
2.06
[.081]
.71
[.028]
.229 ± .013
[.009 ± .0005]
[.039]
[.018]
13.5º MAX
8º MAX
9º MAX
Millimetres
Min
Max
Min
Max
A0
3.05
3.25
0.12
0.128
B0
2.67
2.87
0.105
0.113
D
3.9
4.1
0.153
0.161
D1
1.95
2.05
0.788
0.792
E
1.65
1.85
0.065
0.073
F
3.45
3.55
0.136
0.14
K0
1.12
1.32
0.476
0.484
P
0.95
1.05
0.037
0.041
P0
3.9
4.1
0.153
P1
A0
SPLV2.8 Series
K0
B0
W
142
Revision: March 20, 2012
Inches
1.6
7.9
8.3
0.161
0.063
0.311
0.327
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.