2N3904(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 0.2 A 0.625 W Dimensions in inches and (millimeters) IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEO VCE= 40V, IB=0 0.1 μA IEBO VEB= 5V, IC=0 0.1 μA hFE1 VCE=1V, IC=10mA 100 hFE2 VCE=1V, IC=50mA 60 hFE3 VCE=1V, IC=100mA 30 Emitter cut-off current DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V Transition frequency fT VCE=20V,IC=10mA,f=100MHz Delay Time td VCC=3V,VBE=0.5V, 35 ns Rise Time tr IC=10mA,IB1=1mA 35 ns Storage Time ts VCC=3V, IC=10mA 200 ns Fall Time tf IB1=IB2=1mA 50 ns CLASSIFICATION Rank Range OF 300 MHZ hFE1 O Y G 100-200 200-300 300-400 2N3904(NPN) TO-92 Bipolar Transistors Typical Characteristics