2N5551(NPN)

2N5551(NPN)
TO-92 Bipolar Transistors
TO-92
1.
EMITTER
2.
BASE
3. COLLECTOR
Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.180V)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Dimensions in inches and (millimeters)
Value
Units
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
6
V
0.6
A
PC
Collector Power Dissipation
0.625
W
Tj
Junction Temperature
150
Tstg
℃
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter
breakdown
voltage
Emitter-base breakdown voltage
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
V(BR)CBO
IC=100μA,IE=0
180
V
V(BR)CEO*
IC= 1mA, IB=0
160
V
V(BR)EBO
IE= 10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 120V, IE=0
50
nA
Emitter cut-off current
IEBO
VEB= 4V, IC=0
50
nA
hFE1*
VCE=5V, IC=1mA
80
hFE2*
VCE=5V, IC =10mA
80
hFE3
VCE=5V, IC=50mA
30
DC current gain
Collector-emitter saturation voltage
VCEsat*
Base-emitter saturation voltage
VBEsat*
Transition frequency
fT
250
IC=10mA, IB=1mA
0.15
IC=50mA, IB=5mA
0.2
IC=10mA, IB= 1mA
1
IC=50mA, IB= 5mA
1
VCE=10V,IC=10mA,f=100MHz
100
V
V
300
MHz
VCB=10V,IE=0,f=1MHz
6
pF
Collector output capacitance
Cob
Input capacitance
Cib
VBE=0.5V,IC=0,f=1MHz
20
pF
NF
VCE=5V,Ic=0.25mA,
f=10Hz to 15.7KHz,Rs=1kΩ
8
dB
Noise figure
*Pulse test
2N5551(NPN)
TO-92 Bipolar Transistors
Typical Characteristosc