FMW3/FMW4 Dual Transistor SOT-23-5L 2 .8 20 3. 020 0° 8° 0 .3 00 0. 500 0 .3 00 0. 600 Features 2. 650 2 .950 1 .5 00 1. 700 High breakdown voltage 0. 950 0 .1 00 0. 200 1. 800 2 .000 0. 000 0 .100 1 .0 50 1. 250 1. 050 1 .150 Dimensions in millimeters MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ MARKING: FMW3:W3 FMW4:W4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 5 V Collector cut-off current ICBO VCB=100V, IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V, IC=0 0.5 μA DC current gain hFE VCE=6V, IC=2mA Collector-emitter saturation voltage Transition frequency VCE(sat) fT 180 820 IC=10mA, IB=1mA VCE=12V, IC=2mA, f=100MHz 0.5 140 V MHz FMW3/FMW4 Dual Transistor Typical Characteristics