NELLSEMI N-HFA30PA60C

N-HFA30PA60C
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I RRM
Very low Q rr
Specified at operating conditions
Designed and qualified for industrial level
TO-247 AB
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
common
cathode
2
DESCRIPTION
HFA30PA60C is a state of the art center tap ultrafast
recovery diode.
Employing the latest in epitaxial
construction and advanced processing techniques
it features a superb combination of characteristics
which result in performance which is unsurpassed by
any rectifier previously available. With basic ratings
of 600V and 15 A per leg continuous current, the
HFA30PA60C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the FRED product line
features extremely low values of peak recovery
current (I RRM ) and does not exhibit any tendency to
“snap-off” during the t b portion of recovery. The FRED
features combine to offer designers a rectifier with
lower noise and significantly lower switching losses
in both the diode and the switching transistor.
These FRED advantages can help to significantly
reduce snubbing, component count and heatsink
sizes. The FRED HFA30PA60C is ideally suited for
applications in power conversion systems (such as
inverters), motor drives, and many other similar
applications where high speed, high efficiency is
needed.
1
Anode
1
2
Common
cathode
3
Anode
2
PRODUCT SUMMARY
VR
600 V
VF at 15A at 25 °C
1.7 V
IF(AV)
2 x 15 A
trr (typical)
19 ns
TJ (maximum)
150 °C
Qrr (typical)
80 nC
dI(rec)M/dt (typical)
160 A/µs
IRRM (typical)
4.0 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Maximum continuous forward current
TEST CONDITIONS
VR
per leg
per device
IF
VALUES
UNITS
600
V
15
Tc = 100 ºC
30
Single pulse forward current
IFSM
150
Maximum repetitive forward current
IFRM
60
Maximum power dissipation
Operating junction and storage temperature range
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PD
TJ, TStg
Page 1 of 6
Tc = 25 ºC
74
Tc = 100 ºC
29
- 55 to + 150
A
W
ºC
N-HFA30PA60C
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
Cathode to anode
breakdown voltage
(TJ = 25 ºC unless otherwise specified)
SYMBOL
VBR
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
-
1.55
1.7
IF = 30 A
-
1.80
2.0
IF = 15 A, TJ = 125 ºC
-
1.40
1.55
V R = V R rated
-
1.0
T J = 125°C, V R = V R rated
-
400
10
1000
50
pF
-
nH
MAX.
UNITS
IR = 100 µA
IF = 15 A
Maximum forward voltage
VFM
Maximum reverse
leakage current
IRM
Junction capacitance
CT
V R = 200V
-
25
Series inductance
LS
Measured lead to lead 5 mm from package body
-
12
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of fall of recovery
current during tb
TEST CONDITIONS
MIN.
TYP.
-
25
33
IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C
-
19
-
trr1
TJ = 25 ºC
-
42
60
trr2
TJ = 125 ºC
-
70
120
-
4.0
6.0
-
6.5
10
IRRM1
µA
IF= 15A
dIF/dt = -200 A/µs
VR = 200 V
TJ = 25 ºC
ns
IRRM2
TJ = 125 ºC
Qrr1
TJ = 25 ºC
-
80
180
Qrr2
TJ = 125 ºC
-
220
600
dl(rec)M/dt1
TJ = 25 ºC
-
250
-
TJ = 125 ºC
-
160
-
dl(rec)M/dt2
V
(TJ = 25 ºC unless otherwise specified)
I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT)
trr
UNITS
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting
SYMBOL
Tlead
TEST CONDITIONS
0.063'' from case (1.6 mm) for 10 s
MIN.
TYP.
-
-
MAX.
300
-
-
1.7
-
-
0.85
UNITS
°C
RthJC
K/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.25
-
-
6.0
-
-
0.21
-
oz.
-
12
(10)
kgf . cm
(lbf . in)
Weight
6.0
(5.0)
Mounting torque
Marking device
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Case style TO-247AB (JEDEC)
Page 2 of 6
HFA30PA60C
g
N-HFA30PA60C
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 Maximum Forward Voltage Drop vs. Instantaneous
Fig.2 Typical Reverse Current vs. Reverse Voltage (Per Leg)
Forward Current (Per Leg)
10000
100
TJ = 150 ºC
J
1000
100
TJ = 125 ºC
10
1
0.1
TJ = 25ºC
TJ = 150 ºC
0.01
0
TJ = 125 ºC
10
100
200
300
400
500
600
Reverse Voltage - VR (V)
TJ = 25 ºC
Fig.3 Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
100
A
TJ = 25ºC
1
1.0
A
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Forward Voltage Drop - V FM(V)
10
0
100
200
300
400
Reverse Voltage - VR (V)
Fig.4 Maximum Thermal Impedance Z thJC Characteristics (Per Leg)
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
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Page 3 of 6
0.1
1
500
600
N-HFA30PA60C
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.7 Typical Stored Charge vs. dIF/dt (Per Leg)
Fig.5 Typical Reverse Recovery Time vs. dIF/dt
(Per Leg)
800
100
VR = 200V
TJ = 125 ºC
TJ = 25ºC
I F = 30A
I F = 15A
I F = 5.0A
80
600
I F = 30A
I F = 15A
60
IF = 5.0A
400
40
200
20
VR = 200V
TJ = 125 ºC
TJ = 25 ºC
0
10 0
dI F /dt - (A/s)
0
100
1000
dI F/dt - (A/s)
1000
Fig.8 Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
Fig.6 Typical Recovery Current vs. dI F/dt (Per Leg)
10000
25
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125 ºC
TJ = 25 ºC
20
dl (rec)M /dt(A/µs)
I F = 30A
I F = 15A
I F = 5.0A
15
10
I F = 30A
I F = 15A
1000
I F = 5.0A
5
0
100
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dI F/dt - (A/s)
100
100
1000
Page 4 of 6
dI F/dt - (A/s)
1000
N-HFA30PA60C
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
VR = 200 V
0.01 Ω
L = 70 焙
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig.10 Reverse Recovery Waveform and Definitions
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M /dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 RRM
I
extrapolated to zero current.
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Page 5 of 6
(4) Q rr - area under curve defined by trr
and IRRM
Qrr =
t rr x l RRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
N-HFA30PA60C
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
-
N
1
www.nellsemi.com
HFA
30
PA
60
C
2
3
4
5
6
1
-
Nell Semiconductors product
2
-
FRED family
3
-
Current rating (30 = 30 A, 15A x 2)
4
-
Package outline (PA = TO-247, 3 pins)
5
-
Voltage rating (60 = 600 V)
6
-
Configuration (C = Center tap common cathode)
Page 6 of 6