NST200F12 / NST200F12-A

RoHS
NST200F12 / NST200F12-A RoHS
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode
100A x 2 / 1200V
Available
RoHS*
COMPLIANT
FEATURES
Fast recovery time characteristic
Electrically isolated base plate
Large creepage distance between terminal
Simplified mechanical designs, rapid assembly
Compliant to RoHS
Designed and for industrial level
DESCRIPTION
CIRCUIT CONFIGURATION
This SOT-227 modules with FRED rectifier are available
in two basic configurations. They are the antiparallel
and the parallel configurations. The antiparallel configuration
NST200F12-A is used for simple series rectifier and high
voltage application. The parallel configuration NST200F12 is
used for simple parallel rectifier and high current application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built. These modules are intended
for general applications such as power supplies, battery
chargers, electronic welders, motor control, DC chopper, and
inverters.
Parallel
NST200F12
Anti-Parallel
NST200F12-A
APPLICATIONS
Switching power supplies
Inverters
Motor controllers
Converters
Snubber diodes
Uninterruptible power supplies (UPS)
Induction heating
High speed rectifiers
PRODUCT SUMMARY
VR
1200 V
VF(typical) at 125 ºC
1.8 V
trr (typical)
65 ns
IF(DC) at TC per diode
93A at 80 ºC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VR
Cathode to anode voltage
per leg
per module
VALUES
UNITS
1200
V
93
IF
Tc = 80 ºC
Single pulse forward current
I FSM
TJ = 25 ºC
1000
RMS isolation voltage, any terminal to case
V ISOL
t = 1 minute
2500
Tc = 25 ºC
440
Tc = 100 ºC
260
Maximum continuous forward current
Maximum power dissipation
Operating junction and storage temperature range
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PD
TJ, TStg
186
- 55 to 150
Page 1 of 5
A
V
W
°C
RoHS
NST200F12 / NST200F12-A RoHS
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
(TJ = 25 ºC unless otherwise specified)
SYMBOL
VBR
VFM
Maximum reverse
leakage current
IRM
Junction capacitance
CJ
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
IF = 100 A
-
2.0
2.2
IF = 200 A
-
2.3
-
IF = 100 A, TJ = 125 ºC
-
1.8
-
V R = V R rated
-
T J = 125°C, V R = V R rated
-
2
-
1.0
IR = 100 µA
V R = 200V
SYMBOL
TYP.
MAX.
I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT)
-
90
100
IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C
-
65
-
trr1
TJ = 25 ºC
-
420
-
trr2
TJ = 125 ºC
-
580
-
IRRM1
TJ = 25 ºC
-
7
-
IRRM2
TJ = 125 ºC
-
19
-
Qrr1
TJ = 25 ºC
-
1250
-
TJ = 125 ºC
-
5350
-
Reverse recovery time
Reverse recovery time
Reverse recovery time
Qrr2
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
µA
mA
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
trr
V
pF
120
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
50
UNITS
IF= 100A
dIF/dt = -200 A/µs
VR =800 V
UNITS
ns
A
nC
(TJ = 25 ºC unless otherwise specified)
SYMBOL
MIN.
TYP.
MAX.
-
-
0.41
-
-
0.205
-
0.05
-
Weight
-
30
-
g
Mounting torque
-
-
1.1
Nm
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to sink, flat, greased surface
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RthJC
RthCS
Page 2 of 5
UNITS
ºC/W
K/W
RoHS
NST200F12 / NST200F12-A RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
Thermal impedance(°C/W), Z θJC
0.45
0.9
0.40
0.35
0.7
0.30
0.25
0.5
Note:
PDM
0.20
0.3
0.15
t1
t2
0.10
Duty Factor D =t 1 /t 2
Peak T J = PDM xZ θ JC +T C
0.1
0.05
SINGLE PULSE
0.05
0
10-4
10-5
10-2
10-3
0.1
1
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
Fig.3 Reverse recovery time vs. current rate of change
700
Reverse recovery time, t rr
(ns)
300
200
(A)
Forward current, I F
250
T J =150°C
150
100
T J =25°C
T J =125°C
50
T J =125°C
T R =800V
600
200A
500
100A
400
50A
300
200
100
T J =-55°C
0
0
0
0.5
1
1.5
2.5
2
3
0
Anode-to-cathode voltage (V), V F
600
800
1000
1200
Fig 5. Reverse recovery current vs. current rate of change
80
12000
200A
100A
8000
6000
50A
4000
2000
T J =125°C
T R =800V
70
200A
60
50
(A)
10000
Reverse recovery current, I RRM
T J =125°C
T R =800V
(nC)
400
Current rate of change(A/μs), -di F /dt
Fig.4 Reverse recovery charge vs. current rate of change
Reverse recovery charge, Q rr
200
40
100A
30
20
50A
10
0
0
0
200
400
600
800
1000
1200
0
Current rate of change (A/μs), -di F /dt
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200
400
600
800
1000
1200
Current rate of change (A/μs), -di F /dt
Page 3 of 5
RoHS
NST200F12 / NST200F12-A RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.7 Maximum average forward current vs. case temperature
Fig6. Dynamic parameters vs. junction temperature
140
1.4
Duty cycle = 0.5
120
Qrr
trr
100
1.0
IRRM
l F(AV) (A)
(Normalized to 1000A/µs)
Dynamic parameters, K f
T J =175°C
1.2
0.8
trr
0.6
80
60
40
0.4
Qrr
20
0.2
0.0
0
25
50
75
100
125
0
25
150
50
75
Junction temperature (°C),T J
100
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
Fig.9 Reverse recovery parameter test circuit
VR = 200 V
1000
800
(pF)
Junction capacitance, C J
1200
0.01Ω
L = 70 µH
600
D.U.T.
400
dIF /dt
adjust
D
IRFP250
G
200
S
0
6
10
100 200
reverse voltage (V), V R
Fig.10 Reverse recovery waveform and definitions
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M /dt (5)
0.75 I
RRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
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125
Page 4 of 5
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
t rrx l RRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
150
RoHS
NST200F12 / NST200F12-A RoHS
SEMICONDUCTOR
Nell High Power Products
SOT-227
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A3
4
6.25 (0.246)
12.50 (0.492)
25.70 (1.012)
25.20 (0.992)
-B-
1
2
R full
7.50 (0.295)
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
0.25 (0.010) M C A M B M
2.10 (0.082)
1.90 (0.075)
12.30 (0.484)
11.80 (0.464)
-C0.12 (0.005)
All dimensions in millimeters (inches)
Notes
• Dimensioning and toleranc ing per ANSI Y14.5M-1982
• Controlling dime nsion: millimeter
ORDERING INFORMATION TABLE
Device code
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N
ST
200
F
12
1
2
3
4
5
-
1
-
Nell High Power Products
2
-
Package indicator (SOT-227)
3
-
Current rating (200 = 200A, 100A x 2)
4
-
F = FRED
5
-
Voltage rating (12 = 1200 V)
6
-
Circuit type, A for Anti-Parallel type
Blank for parallel type.
family
Page 5 of 5
A
6