RoHS NST200F12 / NST200F12-A RoHS SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode 100A x 2 / 1200V Available RoHS* COMPLIANT FEATURES Fast recovery time characteristic Electrically isolated base plate Large creepage distance between terminal Simplified mechanical designs, rapid assembly Compliant to RoHS Designed and for industrial level DESCRIPTION CIRCUIT CONFIGURATION This SOT-227 modules with FRED rectifier are available in two basic configurations. They are the antiparallel and the parallel configurations. The antiparallel configuration NST200F12-A is used for simple series rectifier and high voltage application. The parallel configuration NST200F12 is used for simple parallel rectifier and high current application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as power supplies, battery chargers, electronic welders, motor control, DC chopper, and inverters. Parallel NST200F12 Anti-Parallel NST200F12-A APPLICATIONS Switching power supplies Inverters Motor controllers Converters Snubber diodes Uninterruptible power supplies (UPS) Induction heating High speed rectifiers PRODUCT SUMMARY VR 1200 V VF(typical) at 125 ºC 1.8 V trr (typical) 65 ns IF(DC) at TC per diode 93A at 80 ºC ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VR Cathode to anode voltage per leg per module VALUES UNITS 1200 V 93 IF Tc = 80 ºC Single pulse forward current I FSM TJ = 25 ºC 1000 RMS isolation voltage, any terminal to case V ISOL t = 1 minute 2500 Tc = 25 ºC 440 Tc = 100 ºC 260 Maximum continuous forward current Maximum power dissipation Operating junction and storage temperature range www.nellsemi.com PD TJ, TStg 186 - 55 to 150 Page 1 of 5 A V W °C RoHS NST200F12 / NST200F12-A RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage Maximum forward voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR VFM Maximum reverse leakage current IRM Junction capacitance CJ TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 100 A - 2.0 2.2 IF = 200 A - 2.3 - IF = 100 A, TJ = 125 ºC - 1.8 - V R = V R rated - T J = 125°C, V R = V R rated - 2 - 1.0 IR = 100 µA V R = 200V SYMBOL TYP. MAX. I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) - 90 100 IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C - 65 - trr1 TJ = 25 ºC - 420 - trr2 TJ = 125 ºC - 580 - IRRM1 TJ = 25 ºC - 7 - IRRM2 TJ = 125 ºC - 19 - Qrr1 TJ = 25 ºC - 1250 - TJ = 125 ºC - 5350 - Reverse recovery time Reverse recovery time Reverse recovery time Qrr2 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER µA mA (TJ = 25 ºC unless otherwise specified) TEST CONDITIONS MIN. trr V pF 120 DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER 50 UNITS IF= 100A dIF/dt = -200 A/µs VR =800 V UNITS ns A nC (TJ = 25 ºC unless otherwise specified) SYMBOL MIN. TYP. MAX. - - 0.41 - - 0.205 - 0.05 - Weight - 30 - g Mounting torque - - 1.1 Nm Junction to case, single leg conducting Junction to case, both legs conducting Case to sink, flat, greased surface www.nellsemi.com RthJC RthCS Page 2 of 5 UNITS ºC/W K/W RoHS NST200F12 / NST200F12-A RoHS SEMICONDUCTOR Nell High Power Products Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration Thermal impedance(°C/W), Z θJC 0.45 0.9 0.40 0.35 0.7 0.30 0.25 0.5 Note: PDM 0.20 0.3 0.15 t1 t2 0.10 Duty Factor D =t 1 /t 2 Peak T J = PDM xZ θ JC +T C 0.1 0.05 SINGLE PULSE 0.05 0 10-4 10-5 10-2 10-3 0.1 1 Rectangular pulse duration (seconds) Fig.2 Forward current vs. forward voltage Fig.3 Reverse recovery time vs. current rate of change 700 Reverse recovery time, t rr (ns) 300 200 (A) Forward current, I F 250 T J =150°C 150 100 T J =25°C T J =125°C 50 T J =125°C T R =800V 600 200A 500 100A 400 50A 300 200 100 T J =-55°C 0 0 0 0.5 1 1.5 2.5 2 3 0 Anode-to-cathode voltage (V), V F 600 800 1000 1200 Fig 5. Reverse recovery current vs. current rate of change 80 12000 200A 100A 8000 6000 50A 4000 2000 T J =125°C T R =800V 70 200A 60 50 (A) 10000 Reverse recovery current, I RRM T J =125°C T R =800V (nC) 400 Current rate of change(A/μs), -di F /dt Fig.4 Reverse recovery charge vs. current rate of change Reverse recovery charge, Q rr 200 40 100A 30 20 50A 10 0 0 0 200 400 600 800 1000 1200 0 Current rate of change (A/μs), -di F /dt www.nellsemi.com 200 400 600 800 1000 1200 Current rate of change (A/μs), -di F /dt Page 3 of 5 RoHS NST200F12 / NST200F12-A RoHS SEMICONDUCTOR Nell High Power Products Fig.7 Maximum average forward current vs. case temperature Fig6. Dynamic parameters vs. junction temperature 140 1.4 Duty cycle = 0.5 120 Qrr trr 100 1.0 IRRM l F(AV) (A) (Normalized to 1000A/µs) Dynamic parameters, K f T J =175°C 1.2 0.8 trr 0.6 80 60 40 0.4 Qrr 20 0.2 0.0 0 25 50 75 100 125 0 25 150 50 75 Junction temperature (°C),T J 100 Case temperature (°C) Fig.8 Junction capacitance vs. reverse voltage Fig.9 Reverse recovery parameter test circuit VR = 200 V 1000 800 (pF) Junction capacitance, C J 1200 0.01Ω L = 70 µH 600 D.U.T. 400 dIF /dt adjust D IRFP250 G 200 S 0 6 10 100 200 reverse voltage (V), V R Fig.10 Reverse recovery waveform and definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 I RRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. www.nellsemi.com 125 Page 4 of 5 (4) Qrr - area under curve defined by trr and IRRM Qrr = t rrx l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr 150 RoHS NST200F12 / NST200F12-A RoHS SEMICONDUCTOR Nell High Power Products SOT-227 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) 12.30 (0.484) 11.80 (0.464) -C0.12 (0.005) All dimensions in millimeters (inches) Notes • Dimensioning and toleranc ing per ANSI Y14.5M-1982 • Controlling dime nsion: millimeter ORDERING INFORMATION TABLE Device code www.nellsemi.com N ST 200 F 12 1 2 3 4 5 - 1 - Nell High Power Products 2 - Package indicator (SOT-227) 3 - Current rating (200 = 200A, 100A x 2) 4 - F = FRED 5 - Voltage rating (12 = 1200 V) 6 - Circuit type, A for Anti-Parallel type Blank for parallel type. family Page 5 of 5 A 6