NELLSEMI N-HFA60PA40C

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N-HFA60PA40C
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 2 x 30 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I RRM
Very low Q rr
Specified at operating conditions
Designed and qualified for industrial level
TO-247 AB
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
common
cathode
2
DESCRIPTION
HFA60PA40C is a state of the art center tap ultrafast
recovery diode.
Employing the latest in epitaxial
construction and advanced processing techniques
it features a superb combination of characteristics
which result in performance which is unsurpassed by
any rectifier previously available. With basic ratings
of 400V and 30 A per leg continuous current, the
HFA60PA40C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the FRED product line
features extremely low values of peak recovery
current (I RRM ) and does not exhibit any tendency to
“snap-off” during the t b portion of recovery. The FRED
features combine to offer designers a rectifier with
lower noise and significantly lower switching losses
in both the diode and the switching transistor.
These FRED advantages can help to significantly
reduce snubbing, component count and heatsink
sizes. The FRED HFA60PA40C is ideally suited for
applications in power conversion systems (such as
inverters), motor drives, and many other similar
applications where high speed, high efficiency is
needed.
1
Anode
1
2
Common
cathode
3
Anode
2
PRODUCT SUMMARY
VR
400 V
VF at 30A at 25 °C
1.3 V
IF(AV)
2 x 30 A
trr (typical)
22 ns
TJ (maximum)
150 °C
Qrr (typical)
49 nC
lRRM (typical)
3.0 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Maximum continuous forward current
TEST CONDITIONS
VR
per leg
per device
IF
VALUES
UNITS
400
V
30
Tc = 100 ºC
60
l FSM
320
Operating junction and storage temperature range
T J , T Stg
- 55 to + 150
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Page 1 of 5
Single pulse forward current
A
ºC
N-HFA60PA40C
SEMICONDUCTOR
RoHS
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Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
(TJ = 25 ºC unless otherwise specified)
SYMBOL
VBR
VFM
MIN.
TYP.
MAX.
400
-
-
IF = 30 A
-
1.3
1.5
IF = 60 A
-
1.6
-
IF = 30 A, TJ = 125 ºC
-
1.2
-
V R = V R rated
-
-
T J = 125° C, V R = V R rated
-
-
100
500
-
pF
-
nH
MAX.
UNITS
TEST CONDITIONS
IR = 100 µA
Maximum reverse
leakage current
IRM
Junction capacitance
CT
V R = 200 V
-
60
Series inductance
LS
Measured lead to lead 5 mm from package body
-
12
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
Reverse recovery time
Peak recovery current
Reverse recovery charge
TEST CONDITIONS
MIN.
TYP.
-
28
35
IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C
-
22
-
trr1
TJ = 25 ºC
-
32
50
trr2
TJ = 125 ºC
-
95
-
IRRM1
IF= 30A
dIF/dt = -200 A/µs
VR = 266 V
-
3
-
7
-
TJ = 25 ºC
-
49
-
TJ = 125 ºC
-
360
-
TJ = 125 ºC
Qrr1
Qrr2
µA
ns
-
TJ = 25 ºC
IRRM2
V
(TJ = 25 ºC unless otherwise specified)
I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT)
trr
UNITS
A
nC
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting
SYMBOL
Tlead
TEST CONDITIONS
0.063'' from case (1.6 mm) for 10 s
MIN.
TYP.
-
-
MAX.
300
-
-
0.67
-
-
0.34
UNITS
°C
RthJC
K/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.25
-
-
6.0
-
-
0.21
-
oz.
-
12
(10)
kgf . cm
(lbf . in)
Weight
6.0
(5.0)
Mounting torque
Marking device
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Case style TO-247AB (JEDEC)
Page 2 of 5
HFA60PA40C
g
N-HFA60PA40C
SEMICONDUCTOR
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Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.9
0.60
0.50
0.7
0.40
0.5
Note :
0.30
PDM
Thermal impedance(°C/W), Z θJC
0.70
0.3
0.20
t1
t2
t
0.10
Duty Factor D = 1 /t 2
Peak TJ = PDM x ZθJC + TC
0.1
SINGLE PULSE
0.05
0
10 -5
10 -4
10 -3
10 -2
10 -1
1.0
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
Fig.3 Reverse recovery time vs. current rate of change
120
Reverse recovery time, t rr
(ns)
100
80
(A)
Forward current, I F
100
60
T J =125°C
40
T J =25°C
T J =150°C
20
T J =125°C
V R =266V
60A
80
30A
15A
60
40
20
T J =-55°C
0
0
0
0.5
1.5
1
0
2.5
2
Anode-to-cathode voltage (V), V F
60A
30A
400
15A
200
30
600
800
1000
1200
T J =125°C
V = 266V
R
60A
25
20
(A)
800
(nC)
Reverse recovery charge, Q rr
T J =125°C
V = 266V
R
600
400
Fig 5. Reverse recovery current vs. current rate of change
Reverse recovery current, I RRM
Fig.4 Reverse recovery charge vs. current rate of change
1000
200
Current rate of change(A/ μs ), -di F /dt
15
30A
10
15A
5
0
0
0
200
400
600
800
1000
1200
0
Current rate of change (A/ μ s), -di F /dt
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200
400
600
800
1000
Current rate of change (A/ μ s), -di F /dt
Page 3 of 5
1200
N-HFA60PA40C
SEMICONDUCTOR
RoHS
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Nell High Power Products
Fig6. Dynamic parameters vs. junction temperature
Fig.7 Maximum average forward current vs. case temperature
90
1.2
t
rr
70
1.0
60
I
RRM
0.8
t
rr
0.6
40
20
Q
rr
10
0.0
0
0
25
50
75
100
125
150
25
Junction temperature ( ° C),T J
350
300
250
200
150
100
50
0
1
10
100
200
reverse voltage (V), V R
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50
75
100
125
150
Case temperature ( ° C)
Fig.8 Junction capacitance vs. reverse voltage
(pF)
50
30
0.4
0.2
Junction capacitance, C J
Duty cycle = 0.5
T J =175°C
80
Q
rr
l F(AV) (A)
(Normalized to 1000A/ µ s)
Dynamic parameters, K f
1.4
Page 4 of 5
175
N-HFA60PA40C
SEMICONDUCTOR
RoHS
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Nell High Power Products
ORDERING INFORMATION TABLE
Device code
-
N
1
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HFA
60
PA
40
C
2
3
4
5
6
1
-
Nell Semiconductors product
2
-
FRED family
3
-
Current rating ( 60 = 30 A, 30A x 2)
4
-
Package outline (PA = TO-247, 3 pins)
5
-
Voltage rating (40 = 400 V)
6
-
Configuration (C = Center tap common cathode)
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