RoHS RoHS N-HFA08TB120 SEMICONDUCTOR Nell High Power Products FEATURES FRED Ultrafast Soft Recovery Diode, 8 A Available RoHS* COMPLIANT Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count cathode 2 DESCRIPTION HFA08TB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200V and 8 A continuous current, the HFA08TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA08TB120 is ideally suited for applications in power supplies and conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Cathode 3 Anode TO-220AC PRODUCT SUMMARY VR 1200 V VF at 8A at 25 ºC 3.3 V 8A IF(AV) trr (typical) 30 ns TJ (maximum) 150 ºC Qrr (typical) 140 nC dI(rec)M/dt (typical) at 125 ºC 85 A/µS IRRM (typical) 4.5 A ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL TEST CONDITIONS VR IF Tc = 100 ºC VALUES UNITS 1200 V 8 Single pulse forward current I FSM 130 Maximum repetitive forward current I FRM 32 Maximum power dissipation Operating junction and storage temperature range www.nellsemi.com PD Tc = 25 ºC 73 Tc = 100 ºC 29 TJ, TStg Page 1 of 6 - 55 to + 150 A W °C RoHS RoHS N-HFA08TB120 SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR TEST CONDITIONS IR = 100 µA MIN. TYP. MAX. 1200 - - - 2.5 3.3 IF = 8.0 A Maximum forward voltage VFM - 3.0 4.1 IF = 8.0 A, TJ = 125 ºC - 2.3 3.1 V R = V R rated - 0.31 T J = 125°C, V R = V R rated - 135 10 1000 20 pF - nH UNITS IRM Junction capacitance CT V R = 200V - 11 Series inductance LS Measured lead to lead 5 mm from package body - 8.0 DYNAMIC RECOVERY CHARACTERISTICS PERLEG SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb TEST CONDITIONS MIN. TYP. MAX. - 28 35 IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C - 30 - trr1 TJ = 25 ºC - 63 95 trr2 TJ = 125 ºC - 105 160 IRRM1 TJ = 25 ºC - 4.5 8 - 6.1 11 - 140 380 - 335 880 IF= 8.0A dIF/dt = -200 A/µs VR = 200 V ns IRRM2 TJ = 125 ºC Qrr1 TJ = 25 ºC Qrr2 TJ = 125 ºC dl(rec)M/dt1 TJ = 25 ºC - 133 - TJ = 125 ºC - 85 - dl(rec)M/dt2 µA (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr V IF = 16 A Maximum reverse leakage current PARAMETER UNITS A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - - 300 - - 1.7 UNITS Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6 - g - 0.21 - 6.0 (5.0) - 12 (10) oz. kgf . cm (lbf . in) 0.063" from case (1.6 mm) for 10 s Weight Mounting torque Marking device www.nellsemi.com Case style TO-220AC Page 2 of 6 HFA08TB120 ºC K/W N-HFA08TB120 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum Forward Voltage Drop Characteristics Fig.2 Typical Values of Reverse Current vs. Reverse Voltage 1000 100 TJ = 150ºC TJ = 125ºC 100 TJ = 100ºC 10 10 1 TJ = 25ºC 0.1 TJ = 150 ºC TJ = 125 ºC TJ = 25 ºC 1 0.01 0 2 4 6 0 10 8 600 300 Forward Voltage Drop - VFM (V) 900 Reverse Voltage - VR (V) Fig.3 Typical Junction Capacitance vs. Reverse Voltage 100 TJ = 25ºC 10 1 10 1 100 10000 Reverse Voltage - VR (V) Fig.4 Maximum Thermal Impedance Z thJC Characteristics 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 D D D D D D = = = = = = 0.50 0.20 0.10 0.05 0.02 0.01 0.001 t1 t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak TJ = Pdm x ZthJC + Tc 0.01 Rectangular Pulse Duration (sec)- t1 www.nellsemi.com Page 3 of 6 0.1 1 1200 N-HFA08TB120 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 Typical Reverse Recovery Time vs.dIF /dt Fig.7 Typical Stored Charge vs. dIF /dt 1200 160 IF = 8A IF = 4A 140 VR = 160 V TJ = 125 ºC TJ = 25 ºC 1000 120 Q rr (nC) t rr (ns) 800 100 80 IF = 8 A IF = 4 A 600 400 60 VR = 160 V TJ = 125 ºC TJ = 25 ºC 20 200 100 0 1000 100 1000 F F Fig.6 Typical Recovery Current vs. diF/dt Fig.8 Typical dI(rec)M/dt vs. dIF/dt 20 I rr (A) 12 IF = 8 A IF = 4 A dI (rec) M /dt(A/µs) 16 1000 VR = 160 V TJ = 125 ºC TJ = 25 ºC IF = 8 A IF = 4 A 8 100 VR = 160 V TJ = 125 ºC TJ = 25 ºC 4 0 100 1000 F www.nellsemi.com 10 100 1000 F Page 4 of 6 N-HFA08TB120 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 Reverse Recovery Parameter Test Circuit VR = 200 V 0.01Ω L = 70 µH D.U.T. dIF /dt adjust D IRFP250 G S Fig.10 Reverse Recovery Waveform and Definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 I RRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. www.nellsemi.com Page 5 of 6 (4) Qrr - area under curve defined by trr and IRRM Qrr = t rrx I RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr N-HFA08TB120 SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code - N 1 HFA 08 TB 120 2 3 4 5 1 - Nell Semiconductors product 2 - FRED family 3 - Current rating (08 = 8 A) 4 - Package : TB = TO-220AC 5 - Voltage rating (120 = 1200 V) TO-220AC Package Outline 0.404 [10.26] 0.393 [9.98] Cathode 0.186 [4.72] 0.174 [4.42] 0.114 [2.90] 0.102 [2.59] 0.058 [1.47] 0.047 [1.19] Ø0.153 [3.89] Ø0.149 [3.78] 0.508 [12.90] 0.492 [12.50] 0.362 [9.19] 0.354 [8.99] 0.154 [3.91] 0.134 [3.40] 0.110 [2.79] 0.099 [2.51] 0.531 [13.49] 0.515 [13.08] 0.057 [1.45] 0.047 [1.19] Cathode Anode 0.018 [0.46] 0.014 [0.36] 0.100 [2.54] TYP 0.204 [5.18] 0.196 [4.98] www.nellsemi.com Page 6 of 6 0.034 [0.86] 0.030 [0.76]