NELLSEMI N-HFA08TB120

RoHS
RoHS
N-HFA08TB120
SEMICONDUCTOR
Nell High Power Products
FEATURES
FRED
Ultrafast Soft Recovery Diode, 8 A
Available
RoHS*
COMPLIANT
Ultrafast recovery
Ultrasoft recovery
Very low I RRM
Very low Q rr
Specified at operating conditions
Lead (Pb)-free
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
cathode
2
DESCRIPTION
HFA08TB120 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features
a superb combination of characteristics which result
in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200V
and 8 A continuous current, the HFA08TB120 is
especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultrafast
recovery time, the FRED product line features
extremely low values of peak recovery current (I RRM )
and does not exhibit any tendency to “snap-off” during
the t b portion of recovery. The FRED features combine
to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode
and the switching transistor. These FRED advantages
can help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA08TB120
is ideally suited for applications in power supplies and
conversion systems (such as inverters), motor drives,
and many other similar applications where high speed,
high efficiency is needed.
1
Cathode
3
Anode
TO-220AC
PRODUCT SUMMARY
VR
1200 V
VF at 8A at 25 ºC
3.3 V
8A
IF(AV)
trr (typical)
30 ns
TJ (maximum)
150 ºC
Qrr (typical)
140 nC
dI(rec)M/dt (typical) at 125 ºC
85 A/µS
IRRM (typical)
4.5 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
SYMBOL
TEST CONDITIONS
VR
IF
Tc = 100 ºC
VALUES
UNITS
1200
V
8
Single pulse forward current
I FSM
130
Maximum repetitive forward current
I FRM
32
Maximum power dissipation
Operating junction and storage temperature range
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PD
Tc = 25 ºC
73
Tc = 100 ºC
29
TJ, TStg
Page 1 of 6
- 55 to + 150
A
W
°C
RoHS
RoHS
N-HFA08TB120
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
Cathode to anode
breakdown voltage
(TJ = 25 ºC unless otherwise specified)
SYMBOL
VBR
TEST CONDITIONS
IR = 100 µA
MIN.
TYP.
MAX.
1200
-
-
-
2.5
3.3
IF = 8.0 A
Maximum forward voltage
VFM
-
3.0
4.1
IF = 8.0 A, TJ = 125 ºC
-
2.3
3.1
V R = V R rated
-
0.31
T J = 125°C, V R = V R rated
-
135
10
1000
20
pF
-
nH
UNITS
IRM
Junction capacitance
CT
V R = 200V
-
11
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
SYMBOL
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of fall of recovery
current during tb
TEST CONDITIONS
MIN.
TYP.
MAX.
-
28
35
IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C
-
30
-
trr1
TJ = 25 ºC
-
63
95
trr2
TJ = 125 ºC
-
105
160
IRRM1
TJ = 25 ºC
-
4.5
8
-
6.1
11
-
140
380
-
335
880
IF= 8.0A
dIF/dt = -200 A/µs
VR = 200 V
ns
IRRM2
TJ = 125 ºC
Qrr1
TJ = 25 ºC
Qrr2
TJ = 125 ºC
dl(rec)M/dt1
TJ = 25 ºC
-
133
-
TJ = 125 ºC
-
85
-
dl(rec)M/dt2
µA
(TJ = 25 ºC unless otherwise specified)
I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT)
trr
V
IF = 16 A
Maximum reverse
leakage current
PARAMETER
UNITS
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
-
300
-
-
1.7
UNITS
Lead temperature
Tlead
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.25
-
-
6
-
g
-
0.21
-
6.0
(5.0)
-
12
(10)
oz.
kgf . cm
(lbf . in)
0.063" from case (1.6 mm) for 10 s
Weight
Mounting torque
Marking device
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Case style TO-220AC
Page 2 of 6
HFA08TB120
ºC
K/W
N-HFA08TB120
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 Maximum Forward Voltage Drop Characteristics
Fig.2 Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
TJ = 150ºC
TJ = 125ºC
100
TJ = 100ºC
10
10
1
TJ = 25ºC
0.1
TJ = 150 ºC
TJ = 125 ºC
TJ = 25 ºC
1
0.01
0
2
4
6
0
10
8
600
300
Forward Voltage Drop - VFM (V)
900
Reverse Voltage - VR (V)
Fig.3 Typical Junction Capacitance vs. Reverse Voltage
100
TJ = 25ºC
10
1
10
1
100
10000
Reverse Voltage - VR (V)
Fig.4 Maximum Thermal Impedance Z thJC Characteristics
10
1
PDM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D
D
D
D
D
D
=
=
=
=
=
=
0.50
0.20
0.10
0.05
0.02
0.01
0.001
t1
t2
Notes:
1. Duty factor D = t1/ t 2
2. Peak TJ = Pdm x ZthJC + Tc
0.01
Rectangular Pulse Duration (sec)- t1
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Page 3 of 6
0.1
1
1200
N-HFA08TB120
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.5 Typical Reverse Recovery Time vs.dIF /dt
Fig.7 Typical Stored Charge vs. dIF /dt
1200
160
IF = 8A
IF = 4A
140
VR = 160 V
TJ = 125 ºC
TJ = 25 ºC
1000
120
Q rr (nC)
t rr (ns)
800
100
80
IF = 8 A
IF = 4 A
600
400
60
VR = 160 V
TJ = 125 ºC
TJ = 25 ºC
20
200
100
0
1000
100
1000
F
F
Fig.6 Typical Recovery Current vs. diF/dt
Fig.8 Typical dI(rec)M/dt vs. dIF/dt
20
I rr (A)
12
IF = 8 A
IF = 4 A
dI (rec) M /dt(A/µs)
16
1000
VR = 160 V
TJ = 125 ºC
TJ = 25 ºC
IF = 8 A
IF = 4 A
8
100
VR = 160 V
TJ = 125 ºC
TJ = 25 ºC
4
0
100
1000
F
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10
100
1000
F
Page 4 of 6
N-HFA08TB120
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
VR = 200 V
0.01Ω
L = 70 µH
D.U.T.
dIF /dt
adjust
D
IRFP250
G
S
Fig.10 Reverse Recovery Waveform and Definitions
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M /dt (5)
0.75 I RRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
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Page 5 of 6
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
t rrx I RRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
N-HFA08TB120
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
-
N
1
HFA
08
TB
120
2
3
4
5
1
-
Nell Semiconductors product
2
-
FRED family
3
-
Current rating (08 = 8 A)
4
-
Package : TB = TO-220AC
5
-
Voltage rating (120 = 1200 V)
TO-220AC Package Outline
0.404 [10.26]
0.393 [9.98]
Cathode
0.186 [4.72]
0.174 [4.42]
0.114 [2.90]
0.102 [2.59]
0.058 [1.47]
0.047 [1.19]
Ø0.153 [3.89]
Ø0.149 [3.78]
0.508 [12.90]
0.492 [12.50]
0.362 [9.19]
0.354 [8.99]
0.154 [3.91]
0.134 [3.40]
0.110 [2.79]
0.099 [2.51]
0.531 [13.49]
0.515 [13.08]
0.057 [1.45]
0.047 [1.19]
Cathode
Anode
0.018 [0.46]
0.014 [0.36]
0.100 [2.54] TYP
0.204 [5.18]
0.196 [4.98]
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Page 6 of 6
0.034 [0.86]
0.030 [0.76]