RoHS N-HFA15TB60 RoHS SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 15 A Available RoHS* COMPLIANT FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count cathode 2 DESCRIPTION HFA15TB60 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600V and 15 A continuous current, the HFA15TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA15TB60 is ideally suited for applications in power supplies and conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Cathode 3 Anode TO-220AC PRODUCT SUMMARY VR 600 V VF at 15A at 25 °C 1.7 V IF(AV) 15 A trr (typical) 19 ns TJ (maximum) 150 °C Qrr 84 nC dI(rec)M/dt 188 A/μs ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL VR IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation Operating junction and storage temperature range www.nellsemi.com TEST CONDITIONS PD TC= 100 ºC VALUES UNITS 600 V 15 150 A 60 TC= 25 ºC 74 TC = 100 ºC 29 TJ, TStg Page 1 of 6 - 55 to 150 W ºC RoHS N-HFA15TB60 RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR TEST CONDITIONS MIN. TYP. MAX. 600 - - - 1.5 1.7 IF = 30 A - 1.8 2.1 IF = 15 A, TJ = 125 ºC - 1.4 1.6 V R = V R rated - 1.0 T J = 125°C, V R = V R rated - 400 10 1000 50 pF - nH MAX. UNITS IR = 100 µA IF = 15 A Maximum forward voltage VFM Maximum reverse leakage current IRM Junction capacitance CT V R = 200V - 25 Series inductance LS Measured lead to lead 5 mm from package body - 8 DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb TEST CONDITIONS MIN. TYP. - 22 30 IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C - 19 - trr1 TJ = 25 ºC - 42 60 trr2 TJ = 125 ºC - 74 120 µA IRRM1 TJ = 25 ºC - 4.0 6.0 - 6.5 10 - 84 180 - 241 600 IF= 15A dIF/dt = -200 A/µs VR = 200 V ns IRRM2 TJ = 125 ºC Qrr1 TJ = 25 ºC Qrr2 TJ = 125 ºC dl(rec)M/dt1 TJ = 25 ºC - 188 - TJ = 125 ºC - 160 - dl(rec)M/dt2 V (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr UNITS A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS - - 300 °C - - 1.7 Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and gerased - 0.5 - - 0.063" from case (1.6 mm) for 10 s Weight Mounting torque Marking device www.nellsemi.com Case style TO-220AC Page 2 of 6 K/W 2 - g - 0.07 - oz. 6 (5) - 12 (10) kgf . cm (lbf . in) HFA15TB60 RoHS N-HFA15TB60 RoHS SEMICONDUCTOR Nell High Power Products Fig.1 Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig.2 Typical Reverse Current vs. Reverse Voltage Instantaneous Forward Current-lF (A) 100 10 000 TJ = 150 ºC Reverse Current-l R (μΑ) 1000 10 TJ = 150 ºC TJ = 125 ºC TJ = 25 ºC 1 1.0 1.2 1.4 VFM 1.6 2.0 1.8 TJ = 125 ºC 100 10 TJ = 25 ºC 1 0.1 0.01 2.2 300 200 100 2.4 Fig.3 Typical Junction Capacitance vs. Reverse Voltage Junction Capacitance-CT (pF) 100 TJ = 25 ºC 10 10 100 1000 Reverse Voltage-V R (V) Fig.4 Maximum Thermal Impedance Z thJC Characteristics Thermal Response- Z thJC 10 1 P DM t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal response) 0.01 0.00001 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = P DM x ZthJC + TC 0.01 Rectangular Pulse Duration- t 1 (s) www.nellsemi.com 400 500 Reverse Voltage-V R (V ) - Forward Voltage Drop ( V) Page 3 of 6 0.1 600 RoHS N-HFA15TB60 RoHS SEMICONDUCTOR Nell High Power Products Fig.5 Typical Reverse Recovery Time vs. dI F/dt Fig.6 Typical Recovery Current vs. dIF/dt 25 100 IF = 30 A IF = 15 A IF = 5 A 20 15 60 Irr (A) t rr (ns) 80 40 20 10 VR = 200 V TJ = 125 ºC TJ = 25 ºC IF = 30 A IF = 15 A IF = 5 A 5 VR = 200 V TJ = 125 ºC TJ = 25 ºC 0 100 0 100 1000 1000 dI F/dt (A/μs) dI F/dt (A/μs) Fig.7 Typical Stored Charge vs. dI F/dt Fig.8 Typical dI(rec)M/dt vs. dlF/dt 800 Qrr (nC) 600 500 400 dI (rec)M /dt (A/μs) 700 10000 VR = 200 V TJ = 125 ºC TJ = 25 ºC IF = 30 A IF = 15 A IF = 5 A 300 IF = 30 A IF = 15 A IF = 5 A 1000 200 100 0 100 1000 1000 dIF/dt (A/μs) dI F/dt (A/μs) www.nellsemi.com 100 100 VR = 200 V TJ = 125 ºC TJ = 25 ºC Page 4 of 6 RoHS N-HFA15TB60 RoHS SEMICONDUCTOR Nell High Power Products Fig.9 Reverse Recovery Parameter Test Circuit VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig.10 Reverse Recovery Waveform and Definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 RRM I extrapolated to zero current. www.nellsemi.com Page 5 of 6 (4) Q rr - area under curve defined by trr and IRRM Qrr = t rr x l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr RoHS N-HFA15TB60 RoHS SEMICONDUCTOR Nell High Power Products ORDERING INFORMATION TABLE Device code - N 1 HFA 15 TB 60 2 3 4 5 1 - Nell Semiconductors product 2 - FRED family 3 - Current rating (15 = 15 A) 4 - Package : TB = TO-220AC 5 - Voltage rating (60 = 600 V) TO-220AC Package Outline 0.404 [10.26] 0.393 [9.98] Cathode 0.186 [4.72] 0.174 [4.42] 0.114 [2.90] 0.102 [2.59] 0.058 [1.47] 0.047 [1.19] Ø0.153 [3.89] Ø0.149 [3.78] 0.508 [12.90] 0.492 [12.50] 0.362 [9.19] 0.354 [8.99] 0.154 [3.91] 0.134 [3.40] 0.110 [2.79] 0.099 [2.51] 0.531 [13.49] 0.515 [13.08] 0.057 [1.45] 0.047 [1.19] Cathode Anode 0.018 [0.46] 0.014 [0.36] 0.100 [2.54] TYP 0.204 [5.18] 0.196 [4.98] www.nellsemi.com Page 6 of 6 0.034 [0.86] 0.030 [0.76]