N-HFA08TB60 SEMICONDUCTOR RoHS RoHS Nell High Power Products FRED Ultrafast Soft Recovery Diode, 8 A Available RoHS* FEATURES COMPLIANT Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count cathode 2 DESCRIPTION HFA08TB60 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600V and 8 A continuous current, the HFA08TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA08TB60 is ideally suited for applications in power supplies and conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Cathode 3 Anode TO-220AC PRODUCT SUMMARY VR 600 V VF at 8A at 25 ºC 1.7 V IF(AV) 8A trr (typical ) 18 ns TJ (maximum) 150 ºC Qrr (typical) 65 nC dI(rec)M/dt (typical) 240 A/µS IRRM 5.0A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Maximum continuous forward current IF TEST CONDITIONS Tc = 100 ºC VALUES UNITS 600 V 8 Single pulse forward current IFSM 60 Maximum repetitive forward current IFRM 24 Maximum power dissipation Operating junction and storage temperature range www.nellsemi.com PD Tc = 25 ºC 36 Tc = 100 ºC 14 TJ, TStg Page 1 of 6 - 55 to + 150 A W ºC N-HFA08TB60 SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR TEST CONDITIONS MIN. TYP. MAX. 600 - - - 1.4 1.7 IF = 16 A - 1.7 2.1 IF = 8.0 A, TJ = 125 ºC - 1.4 1.7 V R = V R rated - 0.3 T J = 125°C, V R = V R rated - 100 5.0 500 25 pF - nH UNITS IR = 100 µA IF = 8.0 A Maximum forward voltage VFM Maximum reverse leakage current IRM Junction capacitance CT V R = 200V - 10 Series inductance LS Measured lead to lead 5 mm from package body - 8.0 DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb TEST CONDITIONS MIN. TYP. MAX. - 25 - IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C - 18 - trr1 TJ = 25 ºC - 37 55 trr2 TJ = 125 ºC - 55 90 µA IRRM1 TJ = 25 ºC - 3.5 5.0 - 4.5 8.0 - 65 138 - 124 360 IF= 8.0A dIF/dt = -200 A/µs VR = 200 V ns IRRM2 TJ = 125 ºC Qrr1 TJ = 25 ºC Qrr2 TJ = 125 ºC dl(rec)M/dt1 TJ = 25 ºC - 240 - TJ = 125 ºC - 210 - dl(rec)M/dt2 V (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr UNITS A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS - - 300 ºС - - 3.5 Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - 0.063" from case (1.6 mm) for 10 s Weight Mounting torque Marking device www.nellsemi.com Case style TO-220AC Page 2 of 6 K/W - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf . cm (lbf . in) HFA08TB60 N-HFA08TB60 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig.2 Typical Reverse Current vs. Reverse Voltage 1000 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 150 °С 10 1 TJ = 150 °С TJ = 125 °С TJ = 25 °С 0.1 0.4 0.8 1.2 1.6 2.0 2.4 100 TJ = 125 °C 10 1 0.1 TJ = 25 ºC 0.01 0.001 2.8 100 0 3.2 300 200 400 Reverse Voltage (V) VFM - Forward Voltage Drop ( V) Fig.3 Typical Junction Capacitance vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °С 10 1 1 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Response Fig.4 Maximum Thermal Impedance Z thJC Characteristics 1 P 0.1 Single pulse (thermal response) 0.01 0.00001 www.nellsemi.com 0.0001 DM t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak T = Pdm x ZthJC + Tc 0.001 Page 3 of 6 0.01 0.1 1 500 600 N-HFA08TB60 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 Typical Reverse Recovery Time vs. dIF/dt Fig.6 Typical Recovery Current vs. dIF/dt 20 80 IF = 16 A IF = 8 A IF = 4 A 15 Irr (A) t rr (ns) 60 40 VR = 200 V TJ = 125 °С TJ = 25 °С 10 IF = 16 A IF = 8 A IF = 4 A 5 20 VR = 200 V TJ = 125 °С TJ = 25 °С 0 100 0 100 1000 1000 dI F/dt (A/µs) dI F/dt (A/µs) Fig.8 Typical dI(rec)M/dt vs. dIF/dt Fig.7 Typical Stored Charge vs. dIF/dtI 500 Qrr(nC) 300 200 dI (rec)M /dt (A/µs) 400 10 000 VR = 200 V TJ = 125 °С TJ = 25 °С IF = 16 A IF = 8 A IF = 4 A IF = 16 A IF = 8 A IF = 4 A 1000 100 VR = 200 V TJ = 125 °С TJ = 25 °С 0 100 100 100 1000 dI F/dt (A/µs) www.nellsemi.com 1000 dIF/dt (A/µs) Page 4 of 6 N-HFA08TB60 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 Reverse Recovery Parameter Test Circuit VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig.10 Reverse Recovery Waveform and Definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 RRM I extrapolated to zero current. www.nellsemi.com Page 5 of 6 (4) Q rr - area under curve defined by trr and IRRM Qrr = t rr x l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr N-HFA08TB60 SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code - N 1 HFA 08 TB 60 2 3 4 5 1 - Nell Semiconductors product 2 - FRED family 3 - Current rating (08 = 8 A) 4 - Package : TB = TO-220AC 5 - Voltage rating (60 = 600 V) TO-220AC Package Outline 0.404 [10.26] 0.393 [9.98] Cathode 0.186 [4.72] 0.174 [4.42] 0.114 [2.90] 0.102 [2.59] 0.058 [1.47] 0.047 [1.19] Ø0.153 [3.89] Ø0.149 [3.78] 0.508 [12.90] 0.492 [12.50] 0.362 [9.19] 0.354 [8.99] 0.154 [3.91] 0.134 [3.40] 0.110 [2.79] 0.099 [2.51] 0.531 [13.49] 0.515 [13.08] 0.057 [1.45] 0.047 [1.19] Cathode Anode 0.018 [0.46] 0.014 [0.36] 0.100 [2.54] TYP 0.204 [5.18] 0.196 [4.98] www.nellsemi.com Page 6 of 6 0.034 [0.86] 0.030 [0.76]