RoHS N-HFA16TB120 RoHS SEMICONDUCTOR Nell High Power Products FEATURES FRED Ultrafast Soft Recovery Diode, 16 A Available RoHS* COMPLIANT Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count cathode 2 DESCRIPTION HFA16TB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200V and 16 A continuous current, the HFA16TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA16TB120 is ideally suited for applications in power supplies and conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Cathode 3 Anode TO-220AC h PRODUCT SUMMARY VR 1200 V VF at 16A at 25 ºC 3.0 V IF(AV) 16 A trr (typical) 30 ns TJ (maximum) 150 ºC Qrr (typical) 260 nC dI(rec)M/dt (typical) at 125 ºC 76 A/µS IRRM (typical) 5.8 A ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL TEST CONDITIONS VR Tc = 100 ºC IF VALUES UNITS 1200 V 16 Single pulse forward current I FSM 190 Maximum repetitive forward current I FRM 64 Maximum power dissipation Operating junction and storage temperature range www.nellsemi.com PD Tc = 25 ºC 151 Tc = 100 ºC 60 TJ, TStg Page 1 of 6 - 55 to + 150 A W °C RoHS N-HFA16TB120 RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR TEST CONDITIONS IR = 100 µA MIN. TYP. MAX. 1200 - - - 2.5 3.0 IF = 16 A Maximum forward voltage VFM - 3.0 3.5 IF = 16 A, TJ = 125 ºC - 2.3 2.8 V R = V R rated - 0.75 T J = 125°C, V R = V R rated - 375 20 2000 40 pF - nH UNITS IRM Junction capacitance CT V R = 200V - 27 Series inductance LS Measured lead to lead 5 mm from package body - 8.0 DYNAMIC RECOVERY CHARACTERISTICS PERLEG SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb TEST CONDITIONS MIN. TYP. MAX. - 28 35 IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C - 30 - trr1 TJ = 25 ºC - 90 135 trr2 TJ = 125 ºC - 164 245 IRRM1 TJ = 25 ºC - 5.8 10 8.3 15 - 260 675 - 680 1838 TJ = 25 ºC - 120 - TJ = 125 ºC - 76 - TJ = 125 ºC Qrr1 TJ = 25 ºC Qrr2 TJ = 125 ºC dl(rec)M/dt1 dl(rec)M/dt2 ns - IRRM2 µA (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr V IF = 32 A Maximum reverse leakage current PARAMETER UNITS IF= 16A dIF/dt = -200 A/µs VR = 200 V A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Thermal resistance, case to heatsink RthCS TEST CONDITIONS MIN. TYP. MAX. UNITS - - 300 ºC - - 0.83 Typical socket mount - - 80 Mounting surface, flat, smooth and greased - 0.50 - - 2.0 - g - 0.07 - 6.0 (5.0) - 12 (10) oz. kgf . cm (lbf . in) 0.063" from case (1.6 mm) for 10 s Weight Mounting torque Marking device www.nellsemi.com Case style TO-220AC Page 2 of 6 HFA16TB120 K/W RoHS N-HFA16TB120 RoHS SEMICONDUCTOR Nell High Power Products Fig.2 Typical Reverse Current vs. Reverse Voltage Fig.1 Maximum Forward Voltage Drop vs. Instantaneous Forward Current 1000 T J = 150°C 100 100 T J = 125°C 10 1 T J = 25°C 0.1 10 A 0.01 0 200 400 600 800 1000 1200 T J = 150°C T J = 125°C Fig.3 Typical Junction C apacitance vs. Reverse Voltage T J = 25°C 1000 1 100 T J = 25°C 10 0.1 0 2 4 6 8 1 Forward Voltage Drop - V FM (V) 1 10 100 1000 Fig.4 Maximum Thermal Impedance Z thJC Characteristics 1 0.1 D D D D D D = = = = = = 0.50 0.20 0.10 0.05 0.02 0.01 PDM Single Pulse (Thermal Resistance) t1 t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak TJ = Pdm x ZthJC + Tc 0.01 0.00001 www.nellsemi.com 0.0001 0.001 0.01 Page 3 of 6 0.1 1 10 100 10000 RoHS N-HFA16TB120 RoHS SEMICONDUCTOR Nell High Power Products Fig.5 Typical Reverse Recovery Time vs. dIF /dt (Per Leg) Fig.7 Typical Stored Charge vs. dIF/dt (Per Leg) 270 1600 V R = 200V T J = 125°C T J = 25°C 1400 220 1200 lf = 16A trr (ns) lf = 8A lf = 16A lf = 8A 1000 170 800 120 600 400 70 200 V R = 200V T J = 125°C T J = 25°C 0 20 1000 100 100 1000 dl F /dt (A/µs) dl F /dt (A/µs) Fig.6 Typical Recovery Current vs. dlF/dt (Per Leg) Fig.8 Typical dI(rec)M/dt vs. dIF/dt (Per Leg) 30 20 V R = 200V T J = 125°C T J = 25°C dl (rec)M /dt(A/µs) 25 10000 V R = 200V T J = 125°C T J = 25°C lf = 16A lf = 8A 15 10 1000 lf = 16A lf = 8A 100 5 0 100 10 100 1000 dl F /dt (A/µs) www.nellsemi.com 1000 dl F /dt (A/µs) Page 4 of 6 RoHS N-HFA16TB120 RoHS SEMICONDUCTOR Nell High Power Products Fig.9 Reverse Recovery Parameter Test Circuit VR = 200 V 0.01Ω L = 70 µH D.U.T. dIF /dt adjust D IRFP250 G S Fig.10 Reverse Recovery Waveform and Definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 I RRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. www.nellsemi.com Page 5 of 6 (4) Qrr - area under curve defined by trr and IRRM Qrr = t rrx I RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr RoHS N-HFA16TB120 RoHS SEMICONDUCTOR Nell High Power Products ORDERING INFORMATION TABLE Device code - N 1 HFA 16 TB 120 2 3 4 5 1 - Nell Semiconductors product 2 - FRED family 3 - Current rating (16 = 16 A) 4 - Package : TB = TO-220AC 5 - Voltage rating (120 = 1200 V) TO-220AC Package Outline 0.404 [10.26] 0.393 [9.98] Cathode 0.186 [4.72] 0.174 [4.42] 0.114 [2.90] 0.102 [2.59] 0.058 [1.47] 0.047 [1.19] Ø0.153 [3.89] Ø0.149 [3.78] 0.508 [12.90] 0.492 [12.50] 0.362 [9.19] 0.354 [8.99] 0.154 [3.91] 0.134 [3.40] 0.110 [2.79] 0.099 [2.51] 0.531 [13.49] 0.515 [13.08] 0.057 [1.45] 0.047 [1.19] Cathode Anode 0.018 [0.46] 0.014 [0.36] 0.100 [2.54] TYP 0.204 [5.18] 0.196 [4.98] www.nellsemi.com Page 6 of 6 0.034 [0.86] 0.030 [0.76]