RoHS NST120F60 / NST120F60-A RoHS SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 60A × 2 Available RoHS* COMPLIANT FEATURES Fast recovery time characteristic Electrically isolated base plate Large creepage distance between terminal Simplified mechanical designs, rapid assembly Compliant to RoHS Designed and for industrial level DESCRIPTION This SOT-227 modules with FRED rectifier are available in two basic configurations. They are the antiparallel and the parallel configurations. The antiparallel configuration NST120F60-A is used for simple series rectifier and high voltage application. The parallel configuration NST120F60 is used for simple parallel rectifier and high current application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as power supplies, battery chargers, electronic welders, motor control, DC chopper, and inverters. APPLICATIONS CIRCUIT CONFIGURATION 3 4 3 4 2 1 2 1 Parallel NST120F120 Anti-Parallel NST120F120-A PRODUCT SUMMARY VR Switching power supplies Inverters Motor controllers Converters Snubber diodes Uninterruptible power supplies (UPS) Induction heating High speed rectifiers 600 V VF(typical) at 125 ºC 1.4 V Qrr (typical) 220nC IRRM (typical) 4A trr (typical) 40 ns IF(DC) at TC per diode 60A at 100 ºC ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VR Cathode to anode voltage per leg per module VALUES UNITS 600 V 60 IF Tc = 100 ºC Single pulse forward current I FSM TJ = 25 ºC 800 RMS isolation voltage, any terminal to case V ISOL Maximum continuous forward current Maximum power dissipation Operating junction and storage temperature range PD 120 t = 1 minute 2500 Tc = 25 ºC 180 Tc = 100 ºC 71 TJ, TStg Page 1 of 6 - 55 to 150 A V W °C RoHS NST120F60 / NST120F60-A RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER (TJ = 25 ºC unless otherwise specified) SYMBOL TEST CONDITIONS MIN. TYP. MAX. 600 - - Cathode to anode breakdown voltage VBR IR = 100 µA IF = 60 A - 1.6 1.8 Maximum forward voltage VFM IF = 120 A - 1.9 2.1 IF = 60 A, TJ = 125 ºC - 1.4 1.6 V R = V R rated - T J = 125°C, V R = V R rated - 2 - 20 2000 Maximum reverse leakage current IRM Junction capacitance CT V R = 200V PARAMETER SYMBOL Reverse recovery time Reverse recovery time Reverse recovery time TEST CONDITIONS MIN. TYP. MAX. - 50 60 IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C - 40 - trr1 TJ = 25 ºC - 130 - trr2 TJ = 125 ºC - 170 - IRRM1 - 4 - 10 - TJ = 25 ºC - 220 - TJ = 125 ºC - 920 - Qrr1 Qrr2 THERMAL - MECHANICAL SPECIFICATIONS UNITS ns - TJ = 125 ºC PARAMETER IF= 60A dIF/dt = -200 A/µs VR =400 V TJ = 25 ºC IRRM2 µA (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr V pF 90 DYNAMIC RECOVERY CHARACTERISTICS PERLEG UNITS A nC (TJ = 25 ºC unless otherwise specified) SYMBOL MIN. TYP. - - 0.7 - - 0.35 - 0.05 - Weight - 30 - g Mounting torque - - 1.1 Nm Junction to case, single leg conducting Junction to case, both legs conducting Case to sink, flat, greased surface RthJC RthCS Page 2 of 6 MAX. UNITS ºC/W K/W RoHS NST120F60 / NST120F60-A RoHS SEMICONDUCTOR Nell High Power Products Fig.1a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.60 D =0.9 0.50 0.7 0.40 0.5 : 0.3 0.20 0.10 PDM 0.30 Note Thermal impedance(°C/W), Z θJC 0.70 0.1 t1 t2 Duty Factor D =t 1 /t 2 Peak T J = PDM xZ θ JC +T C SINGLE PULSE 0.05 0 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 Rectangular pulse duration (seconds) Fig.1b transient thermal impedance model TJ (°C) TC (°C) 0.0056 Fig.2 Forward current vs. forward voltage 0.255 0.0849 0.186 ZEXT 0.159 Dissipated Power (Watts) 0.489 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Fig.3 Reverse recovery time vs. current rate of change 200 200 180 180 Reverse recovery time, t rr (ns) 160 140 120 100 T J =125°C 80 T J =25°C 60 T J =150°C 40 T J =-55°C 20 0 160 60A 140 0.5 1 1.5 2 30A 120 100 80 60 40 20 0 0 V R = 800V 120A 2.5 Anode-to-cathode voltage (V), V F 0 200 400 600 800 1000 1200 Current rate of change(A/μs), -di F /dt EX (A) Forward current, I F T J = 125°C Page 3 of 6 RoHS NST120F60 / NST120F60-A RoHS SEMICONDUCTOR Nell High Power Products Fig.4 Reverse recovery charge vs. current rate of change Fig 5. Reverse recovery current vs. current rate of change 40 2500 T J = 125°C T J = 125°C 2000 120A (nC) 60A 1500 1000 30A 500 0 0 200 400 600 800 1000 30 25 20 60A 15 30A 10 5 0 1200 0 Current rate of change (A/μs), -di F /dt 200 400 600 800 120 Qrr Duty cycle = 0.5 T J =175°C 100 trr 0.8 80 l F(AV) (A) (Normalized to 1000A/µs) 1.0 Dynamic parameters, K f IRRM 0.6 0.4 60 40 Qrr 0.2 0.0 20 0 25 50 75 100 125 0 150 Junction temperature (°C),T J 700 600 500 400 300 200 100 0 1 10 100 25 50 75 100 125 150 Case temperature (°C) Fig.8 Junction capacitance vs. reverse voltage (pF) 1200 Fig.7 Maximum average forward current vs. case temperature trr Junction capacitance, C J 1000 Current rate of change (A/μs), -di F /dt Fig6. Dynamic parameters vs. junction temperature 1.2 120A V R = 800V 35 (A) Reverse recovery current,I RRM Reverse recovery charge, Q rr V R = 800V 200 reverse voltage (V), V R Page 4 of 6 175 RoHS NST120F60 / NST120F60-A RoHS SEMICONDUCTOR Nell High Power Products Fig.9 Reverse recovery parameter test circuit VR = 200 V 0.01Ω L = 70 µH D.U.T. dIF /dt adjust D IRFP250 G S Fig.10 Reverse recovery waveform and definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 I RRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. Page 5 of 6 (4) Qrr - area under curve defined by trr and IRRM Qrr = t rrx l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr RoHS NST120F60 / NST120F60-A RoHS SEMICONDUCTOR Nell High Power Products SOT-227 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45 4 x M4 nuts ?4.40 (0.173) ?4.20 (0.165) -A3 4 25.70 (1.012) 25.20 (0.992) 6.25 (0.246) 12.50 (0.492) -B1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) 12.30 (0.484) 11.80 (0.464) -C0.12 (0.005) All dimensions in millimeters (inches) Notes • Dimensioning and toleranc ing per ANSI Y14.5M-1982 • Controlling dime nsion: millimeter ORDERING INFORMATION TABLE Device code N ST 120 F 60 1 2 3 4 5 - 1 - Nell High Power Products 2 - Package indicator (SOT-227) 3 - Current rating (120 = 120A, 60A x 2) 4 - F = FRED 5 - Voltage rating (60 = 600 V) 6 - Circuit type, A for Anti-Parallel type Blank for parallel type. family Page 6 of 6 A 6