RoHS NST200F60 / NST200F60-A RoHS SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 100A × 2 Available RoHS* COMPLIANT FEATURES Fast recovery time characteristic Electrically isolated base plate Large creepage distance between terminal Simplified mechanical designs, rapid assembly Compliant to RoHS Designed and for industrial level DESCRIPTION CIRCUIT CONFIGURATION This SOT-227 modules with FRED rectifier are available in two basic configurations. They are the antiparallel and the parallel configurations. The antiparallel configuration NST200F60-A is used for simple series rectifier and high voltage application. The parallel configuration NST200F60 is used for simple parallel rectifier and high current application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as power supplies, battery chargers, electronic welders, motor control, DC chopper, and inverters. 3 4 3 4 2 1 2 1 Parallel NST200F60 Anti-Parallel NST200F60-A APPLICATIONS Switching power supplies Inverters Motor controllers Converters Snubber diodes Uninterruptible power supplies (UPS) Induction heating High speed rectifiers PRODUCT SUMMARY VR 600 V VF(typical) at 125 ºC 1.4 V trr (typical) 34 ns IF(DC) at TC per diode 100A at 85 ºC ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VR Cathode to anode voltage per leg per module VALUES UNITS 600 V 100 IF Tc = 85 ºC Single pulse forward current I FSM TJ = 25 ºC 1000 RMS isolation voltage, any terminal to case V ISOL t = 1 minute 2500 V Tc = 82 ºC 355 W - 55 to 150 °C Maximum continuous forward current Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg Page 1 of 5 200 A RoHS NST200F60 / NST200F60-A RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER (TJ = 25 ºC unless otherwise specified) SYMBOL Cathode to anode breakdown voltage VBR Maximum forward voltage VFM Maximum reverse leakage current IRM Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 100 A - 1.6 - IF = 200 A - 2.0 - IF = 100 A, TJ = 125 ºC - 1.4 - V R = V R rated - 2 T J = 150°C, V R = V R rated - 2 250 - IR = 100 µA V R = 200V PARAMETER SYMBOL Reverse recovery time Reverse recovery time Reverse recovery time TEST CONDITIONS MIN. TYP. MAX. - 70 90 IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C - 34 - trr1 TJ = 25 ºC - 180 - trr2 TJ = 125 ºC - 220 - IRRM1 - 5 - 13 - TJ = 25 ºC - 390 - TJ = 125 ºC - 1450 - Qrr1 Qrr2 THERMAL - MECHANICAL SPECIFICATIONS UNITS ns - TJ = 125 ºC PARAMETER IF= 100A dIF/dt = -200 A/µs VR =400 V TJ = 25 ºC IRRM2 µA mA (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr V pF 170 DYNAMIC RECOVERY CHARACTERISTICS PERLEG UNITS A nC (TJ = 25 ºC unless otherwise specified) SYMBOL UNITS MIN. TYP. MAX. - - 0.45 - - 0.22 - 0.05 - Weight - 30 - g Mounting torque - 1.3 - Nm Junction to case, single leg conducting Junction to case, both legs conducting Case to sink, flat, greased surface RthJC RthCS Page 2 of 5 ºC/W K/W RoHS NST200F60 / NST200F60-A RoHS SEMICONDUCTOR Nell High Power Products Fig.1a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.45 0.9 Thermal impedance(°C/W), Z θJC 0.40 0.35 0.7 0.30 0.25 0.5 Note: 0.15 0.3 PDM 0.20 0.1 Duty Factor D =t 1 /t 2 Peak T J = PDM xZ θ JC +T C t1 t2 0.10 0.05 SINGLE PULSE 0.05 0 10-5 10-4 10-3 10-2 0.1 1 Rectangular pulse duration (seconds) Fig.2 Forward current vs. forward voltage Fig.3 Reverse recovery time vs. current rate of change 250 300 T J =125°C T R =400V Reverse recovery time, t rr (ns) 200A 200 (A) Forward current, I F 250 150 T J =150°C 100 T J =25°C T J =125°C 50 200 100A 50A 150 100 50 T J =-55°C 0 0 0 0.5 1.5 1 2 2.5 0 Anode-to-cathode voltage (V), V F 600 800 1000 1200 Fig 5. Reverse recovery current vs. current rate of change 2000 1500 50A 1000 500 0 50 T J =125°C T R =400V 200A 40 30 (A) Reverse recovery current, I RRM 200A 100A (nC) Reverse recovery charge, Q rr 3000 2500 400 Current rate of change(A/μs), -di F /dt Fig.4 Reverse recovery charge vs. current rate of change T J =125°C T R =400V 200 100A 20 50A 10 0 0 200 400 600 800 1000 1200 0 Current rate of change (A/μs), -di F /dt 200 400 600 800 1000 1200 Current rate of change (A/μs), -di F /dt Page 3 of 5 RoHS NST200F60 / NST200F60-A RoHS SEMICONDUCTOR Nell High Power Products Fig.7 Maximum average forward current vs. case temperature Fig6. Dynamic parameters vs. junction temperature 160 1.4 Duty cycle = 0.5 trr 120 1.0 trr 0.8 IRRM 100 l F(AV) (A) (Normalized to 1000A/µs) Dynamic parameters, K f 1.2 0.6 80 60 50 Qrr 0.4 T J =150°C 140 Qrr 40 0.2 20 0.0 0 25 50 75 100 125 00 25 150 50 75 Junction temperature (°C),T J 100 Case temperature (°C) Fig.8 Junction capacitance vs. reverse voltage Fig.9 Reverse recovery parameter test circuit 1600 VR = 200 V 1200 0.01Ω 1000 L = 70 µH D.U.T. 800 (pF) Junction capacitance, C J 1400 600 dIF /dt adjust 400 D IRFP250 G S 200 0 4 1 10 125 100 200 reverse voltage (V), V R Fig.10 Reverse recovery waveform and definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 I RRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. Page4 of 5 (4) Qrr - area under curve defined by trr and IRRM Qrr = t rrx l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr 150 RoHS NST200F60 / NST200F60-A RoHS SEMICONDUCTOR Nell High Power Products SOT-227 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45 4 x M4 nuts ?4.40 (0.173) ?4.20 (0.165) -A3 4 25.70 (1.012) 25.20 (0.992) 6.25 (0.246) 12.50 (0.492) -B1 2 R full 7.50 (0.295) 15.00 (0.590) 2.10 (0.082) 1.90 (0.075) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) 12.30 (0.484) 11.80 (0.464) -C0.12 (0.005) All dimensions in millimeters (inches) Notes • Dimensioning and toleranc ing per ANSI Y14.5M-1982 • Controlling dime nsion: millimeter ORDERING INFORMATION TABLE Device code N ST 200 F 60 1 2 3 4 5 - 1 - Nell High Power Products 2 - Package indicator (SOT-227) 3 - Current rating (200 = 200A, 100A x 2) 4 - F = FRED 5 - Voltage rating (60 = 600 V) 6 - Circuit type, A for Anti-Parallel type Blank for parallel type. Page 5 of 5 family A 6