NELLSEMI NST120F120

RoHS
NST120F120 / NST120F120-A RoHS
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 60A × 2
Available
RoHS*
COMPLIANT
FEATURES
Fast recovery time characteristic
Electrically isolated base plate
Large creepage distance between terminal
Simplified mechanical designs, rapid assembly
Compliant to RoHS
Designed and for industrial level
DESCRIPTION
CIRCUIT CONFIGURATION
This SOT-227 modules with FRED rectifier are available
in two basic configurations. They are the antiparallel
and the parallel configurations. The antiparallel configuration
NST120F120-A is used for simple series rectifier and high
voltage application. The parallel configuration NST120F120 is
used for simple parallel rectifier and high current application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built. These modules are intended
for general applications such as power supplies, battery
chargers, electronic welders, motor control, DC chopper, and
inverters.
3
4
3
4
2
1
2
1
Parallel
NST120F120
Anti-Parallel
NST120F120-A
APPLICATIONS
Switching power supplies
Inverters
Motor controllers
Converters
Snubber diodes
Uninterruptible power supplies (UPS)
Induction heating
High speed rectifiers
PRODUCT SUMMARY
VR
1200 V
VF(typical) at 125 ºC
2.0 V
trr (typical)
38 ns
IF(DC) at TC per diode
53A at 100 ºC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VR
Cathode to anode voltage
per leg
per module
VALUES
UNITS
600
V
53
IF
Tc = 100 ºC
Single pulse forward current
I FSM
TJ = 25 ºC
350
RMS isolation voltage, any terminal to case
V ISOL
Maximum continuous forward current
Maximum power dissipation
Operating junction and storage temperature range
PD
106
t = 1 minute
2500
Tc = 25 ºC
337
Tc = 100 ºC
135
TJ, TStg
Page 1 of 6
- 55 to 150
A
V
W
°C
RoHS
NST120F120 / NST120F120-A RoHS
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
(TJ = 25 ºC unless otherwise specified)
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
IF = 60 A
-
2.0
2.5
Maximum forward voltage
VFM
IF = 120 A
-
2.3
-
IF = 60 A, TJ = 125 ºC
-
1.8
-
V R = V R rated
-
2
T J = 150°C, V R = V R rated
-
2.5
250
-
Maximum reverse
leakage current
Junction capacitance
IRM
CT
V R = 200V
PARAMETER
SYMBOL
Reverse recovery time
Peak recovery current
Reverse recovery charage
TEST CONDITIONS
MIN.
TYP.
MAX.
-
70
80
IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C
-
38
-
trr1
TJ = 25 ºC
-
400
-
trr2
TJ = 125 ºC
-
470
-
IRRM1
-
6
-
13
-
TJ = 25 ºC
-
1200
-
TJ = 125 ºC
-
4000
-
Qrr1
Qrr2
THERMAL - MECHANICAL SPECIFICATIONS
mA
UNITS
ns
-
TJ = 125 ºC
PARAMETER
IF= 60A
dIF/dt = -200 A/µs
VR =800 V
TJ = 25 ºC
IRRM2
µA
(TJ = 25 ºC unless otherwise specified)
I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT)
trr
V
pF
60
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
UNITS
A
nC
(TJ = 25 ºC unless otherwise specified)
SYMBOL
MIN.
TYP.
-
-
0.50
-
-
0.25
-
0.05
-
Weight
-
30
-
g
Mounting torque
-
-
1.1
Nm
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to sink, flat, greased surface
RthJC
RthCS
Page 2 of 6
MAX.
UNITS
ºC/W
K/W
RoHS
NST120F120 / NST120F120-A RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.9
0.40
0.7
0.30
0.5
0.20
0.3
0.10
0
:
PDM
0.50
Note
Thermal impedance(°C/W), Z θJC
0.60
0.1
SINGLE PULSE
10-4
t2
Duty Factor D =t 1 /t 2
Peak T J = PDM xZ θ JC +T C
0.05
10-5
t1
10-3
10-2
10-1
1.0
Rectangular pulse duration (seconds)
Fig.1b transient thermal impedance model
RC MODEL
Junction
temp (°C)
Power
(watts)
0.148
0.006
0.238
0.0909
0.174
0.524
Case temperature (°C)
Fig.2 Forward current vs. forward voltage
Fig.3 Reverse recovery time vs. current rate of change
200
600
Reverse recovery time, t rr
(ns)
160
140
(A)
Forward current, I F
180
120
T J =150°C
100
80
T J =125°C
60
T J =25°C
40
T J =-55°C
20
0
0
0.5
1
1.5
2
2.5
3
Anode-to-cathode voltage (V), V F
R
500
400
60A
300
30A
200
100
0
3.5
T = 125°C
J
V = 800V
120A
0
200
400
600
800
1000
1200
Current rate of change(A/μs), -di F /dt
Page 3 of 6
RoHS
NST120F120 / NST120F120-A RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.4 Reverse recovery charge vs. current rate of change
Fig 5. Reverse recovery current vs. current rate of change
50
9000
V R = 800V
8000
120A
7000
(nC)
6000
60A
5000
4000
3000
30A
2000
1000
0
0
200
400
600
800
1000
T J = 125°C
V R = 800V
120A
40
30
(A)
Reverse recovery current, l RRM
Reverse recovery charge, Q rr
T J = 125°C
60A
20
30A
10
0
1200
0
Current rate of change (A/μs), -di F /dt
Fig6. Dynamic parameters vs. junction temperature
Irrm
0.8
1000
1200
Duty cycle = 0.5
T J =175°C
70
Qrr
60
l F(AV) (A)
(Normalized to 1000A/µs)
800
80
trr
1.0
Qrr
0.6
50
40
30
0.4
trr
20
0.2
0.0
10
0
25
50
75
100
125
0
150
Junction temperature (°C),T J
600
500
400
300
200
100
0
1
10
25
50
75
100
125
150
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
(pF)
600
90
1.2
Dynamic parameters, K f
400
Fig.7 Maximum average forward current vs. case temperature
1.4
Junction capacitance, C J
200
Current rate of change (A/μs), -di F /dt
100 200
reverse voltage (V), V R
Page4 of 6
175
RoHS
NST120F120 / NST120F120-A RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.9 Reverse recovery parameter test circuit
VR = 200 V
0.01Ω
L = 70 µH
D.U.T.
dIF /dt
adjust
D
IRFP250
G
S
Fig.10 Reverse recovery waveform and definitions
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M /dt (5)
0.75 I
RRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Page 5 of 6
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
t rrx l RRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
RoHS
NST120F120 / NST120F120-A RoHS
SEMICONDUCTOR
Nell High Power Products
SOT-227
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45
4 x M4 nuts
?4.40 (0.173)
?4.20 (0.165)
-A3
4
25.70 (1.012)
25.20 (0.992)
6.25 (0.246)
12.50 (0.492)
-B1
2
R full
7.50 (0.295)
15.00 (0.590)
2.10 (0.082)
1.90 (0.075)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4x
7.70 (0.303)
0.25 (0.010) M C A M B M
2.10 (0.082)
1.90 (0.075)
12.30 (0.484)
11.80 (0.464)
-C0.12 (0.005)
All dimensions in millimeters (inches)
Notes
• Dimensioning and toleranc ing per ANSI Y14.5M-1982
• Controlling dime nsion: millimeter
ORDERING INFORMATION TABLE
Device code
N
ST
120
F
120
1
2
3
4
5
-
1
-
Nell High Power Products
2
-
Package indicator (SOT-227)
3
-
Current rating (120 = 120A, 60A x 2)
4
-
F = FRED
5
-
Voltage rating (120 = 1200 V)
6
-
Circuit type, A for Anti-Parallel type
Blank for parallel type.
Page 6 of 6
family
A
6