RoHS NST120F120 / NST120F120-A RoHS SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 60A × 2 Available RoHS* COMPLIANT FEATURES Fast recovery time characteristic Electrically isolated base plate Large creepage distance between terminal Simplified mechanical designs, rapid assembly Compliant to RoHS Designed and for industrial level DESCRIPTION CIRCUIT CONFIGURATION This SOT-227 modules with FRED rectifier are available in two basic configurations. They are the antiparallel and the parallel configurations. The antiparallel configuration NST120F120-A is used for simple series rectifier and high voltage application. The parallel configuration NST120F120 is used for simple parallel rectifier and high current application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as power supplies, battery chargers, electronic welders, motor control, DC chopper, and inverters. 3 4 3 4 2 1 2 1 Parallel NST120F120 Anti-Parallel NST120F120-A APPLICATIONS Switching power supplies Inverters Motor controllers Converters Snubber diodes Uninterruptible power supplies (UPS) Induction heating High speed rectifiers PRODUCT SUMMARY VR 1200 V VF(typical) at 125 ºC 2.0 V trr (typical) 38 ns IF(DC) at TC per diode 53A at 100 ºC ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VR Cathode to anode voltage per leg per module VALUES UNITS 600 V 53 IF Tc = 100 ºC Single pulse forward current I FSM TJ = 25 ºC 350 RMS isolation voltage, any terminal to case V ISOL Maximum continuous forward current Maximum power dissipation Operating junction and storage temperature range PD 106 t = 1 minute 2500 Tc = 25 ºC 337 Tc = 100 ºC 135 TJ, TStg Page 1 of 6 - 55 to 150 A V W °C RoHS NST120F120 / NST120F120-A RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER (TJ = 25 ºC unless otherwise specified) SYMBOL TEST CONDITIONS MIN. TYP. MAX. 1200 - - Cathode to anode breakdown voltage VBR IR = 100 µA IF = 60 A - 2.0 2.5 Maximum forward voltage VFM IF = 120 A - 2.3 - IF = 60 A, TJ = 125 ºC - 1.8 - V R = V R rated - 2 T J = 150°C, V R = V R rated - 2.5 250 - Maximum reverse leakage current Junction capacitance IRM CT V R = 200V PARAMETER SYMBOL Reverse recovery time Peak recovery current Reverse recovery charage TEST CONDITIONS MIN. TYP. MAX. - 70 80 IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C - 38 - trr1 TJ = 25 ºC - 400 - trr2 TJ = 125 ºC - 470 - IRRM1 - 6 - 13 - TJ = 25 ºC - 1200 - TJ = 125 ºC - 4000 - Qrr1 Qrr2 THERMAL - MECHANICAL SPECIFICATIONS mA UNITS ns - TJ = 125 ºC PARAMETER IF= 60A dIF/dt = -200 A/µs VR =800 V TJ = 25 ºC IRRM2 µA (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr V pF 60 DYNAMIC RECOVERY CHARACTERISTICS PERLEG UNITS A nC (TJ = 25 ºC unless otherwise specified) SYMBOL MIN. TYP. - - 0.50 - - 0.25 - 0.05 - Weight - 30 - g Mounting torque - - 1.1 Nm Junction to case, single leg conducting Junction to case, both legs conducting Case to sink, flat, greased surface RthJC RthCS Page 2 of 6 MAX. UNITS ºC/W K/W RoHS NST120F120 / NST120F120-A RoHS SEMICONDUCTOR Nell High Power Products Fig.1a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0 : PDM 0.50 Note Thermal impedance(°C/W), Z θJC 0.60 0.1 SINGLE PULSE 10-4 t2 Duty Factor D =t 1 /t 2 Peak T J = PDM xZ θ JC +T C 0.05 10-5 t1 10-3 10-2 10-1 1.0 Rectangular pulse duration (seconds) Fig.1b transient thermal impedance model RC MODEL Junction temp (°C) Power (watts) 0.148 0.006 0.238 0.0909 0.174 0.524 Case temperature (°C) Fig.2 Forward current vs. forward voltage Fig.3 Reverse recovery time vs. current rate of change 200 600 Reverse recovery time, t rr (ns) 160 140 (A) Forward current, I F 180 120 T J =150°C 100 80 T J =125°C 60 T J =25°C 40 T J =-55°C 20 0 0 0.5 1 1.5 2 2.5 3 Anode-to-cathode voltage (V), V F R 500 400 60A 300 30A 200 100 0 3.5 T = 125°C J V = 800V 120A 0 200 400 600 800 1000 1200 Current rate of change(A/μs), -di F /dt Page 3 of 6 RoHS NST120F120 / NST120F120-A RoHS SEMICONDUCTOR Nell High Power Products Fig.4 Reverse recovery charge vs. current rate of change Fig 5. Reverse recovery current vs. current rate of change 50 9000 V R = 800V 8000 120A 7000 (nC) 6000 60A 5000 4000 3000 30A 2000 1000 0 0 200 400 600 800 1000 T J = 125°C V R = 800V 120A 40 30 (A) Reverse recovery current, l RRM Reverse recovery charge, Q rr T J = 125°C 60A 20 30A 10 0 1200 0 Current rate of change (A/μs), -di F /dt Fig6. Dynamic parameters vs. junction temperature Irrm 0.8 1000 1200 Duty cycle = 0.5 T J =175°C 70 Qrr 60 l F(AV) (A) (Normalized to 1000A/µs) 800 80 trr 1.0 Qrr 0.6 50 40 30 0.4 trr 20 0.2 0.0 10 0 25 50 75 100 125 0 150 Junction temperature (°C),T J 600 500 400 300 200 100 0 1 10 25 50 75 100 125 150 Case temperature (°C) Fig.8 Junction capacitance vs. reverse voltage (pF) 600 90 1.2 Dynamic parameters, K f 400 Fig.7 Maximum average forward current vs. case temperature 1.4 Junction capacitance, C J 200 Current rate of change (A/μs), -di F /dt 100 200 reverse voltage (V), V R Page4 of 6 175 RoHS NST120F120 / NST120F120-A RoHS SEMICONDUCTOR Nell High Power Products Fig.9 Reverse recovery parameter test circuit VR = 200 V 0.01Ω L = 70 µH D.U.T. dIF /dt adjust D IRFP250 G S Fig.10 Reverse recovery waveform and definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 I RRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. Page 5 of 6 (4) Qrr - area under curve defined by trr and IRRM Qrr = t rrx l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr RoHS NST120F120 / NST120F120-A RoHS SEMICONDUCTOR Nell High Power Products SOT-227 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45 4 x M4 nuts ?4.40 (0.173) ?4.20 (0.165) -A3 4 25.70 (1.012) 25.20 (0.992) 6.25 (0.246) 12.50 (0.492) -B1 2 R full 7.50 (0.295) 15.00 (0.590) 2.10 (0.082) 1.90 (0.075) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) 12.30 (0.484) 11.80 (0.464) -C0.12 (0.005) All dimensions in millimeters (inches) Notes • Dimensioning and toleranc ing per ANSI Y14.5M-1982 • Controlling dime nsion: millimeter ORDERING INFORMATION TABLE Device code N ST 120 F 120 1 2 3 4 5 - 1 - Nell High Power Products 2 - Package indicator (SOT-227) 3 - Current rating (120 = 120A, 60A x 2) 4 - F = FRED 5 - Voltage rating (120 = 1200 V) 6 - Circuit type, A for Anti-Parallel type Blank for parallel type. Page 6 of 6 family A 6