DISCRETE SEMICONDUCTORS DATA SHEET BLF242 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF242 PIN CONFIGURATION • High power gain • Low noise halfpage • Easy power control 1 4 • Good thermal stability • Withstands full load mismatch d • Gold metallization ensures excellent reliability. g MBB072 2 s 3 DESCRIPTION MSB057 Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. Fig.1 Simplified outline and symbol. CAUTION The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING PINNING - SOT123 PIN DESCRIPTION 1 drain 2 source 3 gate 4 source Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B September 1992 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 175 28 5 > 13 typ. 16 > 50 typ. 60 2 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 1 A Ptot total power dissipation − 16 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tmb = 25 °C THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 16 W 11 K/W Rth mb-h thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 16 W 0.3 K/W MRA918 10 MPG141 20 handbook, halfpage handbook, halfpage ID (A) Ptot (2) (W) 1 (2) (1) (1) 10 10−1 10−2 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 °C. 100 Th (°C) 150 (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. September 1992 50 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VGS = 0; ID = 0.1 mA MIN. TYP. MAX. UNIT 65 − − V(BR)DSS drain-source breakdown voltage IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 10 µA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 3 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 0.3 A; VDS = 10 V 0.16 0.24 − S RDS(on) drain-source on-state resistance ID = 0.3 A; VGS = 1 V − 3.3 5 Ω IDSX on-state drain current VGS = 10 V; VGS = 10 V − 1.2 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 13 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 9.4 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 1.7 − pF MBB777 4 V MGP142 1.5 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) 2 1 0 0.5 –2 0 –4 0 100 200 ID (mA) 0 300 VDS = 10 V. Fig.4 10 VGS (V) 15 VDS = 10 V; Tj = 25 °C. Temperature coefficient of gate-source voltage as a function of drain current, typical values. September 1992 5 Fig.5 4 Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 MBB778 6 MBB776 30 handbook, halfpage handbook, halfpage RDS (on) (Ω) C (pF) 4 20 Cis Cos 2 10 0 0 0 50 100 Tj (oC) 150 0 10 ID = 0.3 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values. MBB775 6 handbook, halfpage Crs (pF) 4 2 0 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. September 1992 5 20 VDS (V) 30 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ηD (%) RGS (Ω) 175 28 10 5 > 13 typ. 16 > 50 typ. 60 47 CW, class-B Ruggedness in class-B operation The BLF242 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f =175 MHz at rated output power. Noise figure (see Fig.11) VDS = 28 V; ID = 0.2 A; f = 175 MHz; RGS = 47 Ω; Th = 25 °C. Input and output power matched for PL = 5 W; F = typ. 5.5 dB. MGP144 MGP143 10 100 20 handbook, halfpage Gp ηd (%) Gp (dB) handbook, halfpage PL (W) ηd 10 0 0 5 PL (W) 50 5 0 0 0 10 0.5 PIN (W) 1 Class-B operation; VDS = 28 V; IDQ = 10 mA; RGS = 47 Ω; f = 175 MHz. Class-B operation; VDS = 28 V; IDQ = 10 mA; RGS = 47 Ω; f = 175 MHz. Fig.9 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of load power, typical values. September 1992 6 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 L3 D.U.T. handbook, full pagewidth C1 output 50 Ω L2 L1 input 50 Ω C6 L5 C7 R1 C2 L4 C3 L6 C3 +VD R2 +VG C8 C5 C9 MGP145 f = 175 MHz. Fig.11 Test circuit for class-B operation. List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C7 film dielectric trimmer 4 to 40 pF 2222 809 08002 C3 multilayer ceramic chip capacitor (note 1) 100 pF C4, C8 ceramic chip capacitor 100 nF 2222 852 47104 C6 film dielectric trimmer 5 to 60 pF 2222 809 08003 C9 electrolytic capacitor 2.2 µF, 40 V L1 5 turns enamelled 0.7 mm copper wire 53 nH L2, L3 stripline (note 2) 30 Ω 10 × 6 mm L4 11 turns enamelled 1 mm copper wire 500 nH length 15.5 mm int. dia. 8 mm leads 2 × 5 mm L5 5 turns enamelled 1 mm copper wire 79 nH length 9.1 mm int. dia. 5 mm leads 2 × 5 mm L6 grade 3B Ferroxcube RF choke R1 0.5 W metal film resistor 47 Ω R2 0.5 W metal film resistor 10 Ω length 5.4 mm int. dia. 3 mm leads 2 × 5 mm 4312 020 36640 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr = 4.5), thickness 1⁄16 inch. September 1992 7 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 150 handbook, full pagewidth strap strap 70 rivet L6 +VD C5 R2 C8 C3 C4 +VG L4 R1 C1 C2 L5 L1 L2 C9 C6 L3 C7 MGP146 The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by fixing screws, copper straps and hollow rivets at the edges of the board and under the source. Dimensions in mm. Fig.12 Component layout for 175 MHz class-B test circuit. September 1992 8 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 MGP149 MGP150 50 100 handbook, halfpage Zi (Ω) handbook, halfpage ri ZL (Ω) 30 10 RL 50 XL −10 xi −30 0 100 f (MHz) 0 200 0 100 f (MHz) 200 Class-B operation; VDS = 28 V; PL = 30 W; RGS = 47 Ω; Th = 25 °C. Class-B operation; VDS = 28 V; PL = 30 W; RGS = 47 Ω; Th = 25 °C. Fig.13 Input impedance as a function of frequency (series components), typical values. Fig.14 Load impedance as a function of frequency (series components), typical values. MGP148 20 handbook, halfpage Gp (dB) 10 0 0 100 f (MHz) 200 Class-B operation; VDS = 28 V; PL = 30 W; RGS = 47 Ω; Th = 25 °C. Fig.15 Power gain as a function of frequency, typical values. September 1992 9 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F q C B U1 w2 M C c H b L 4 3 α A p U3 U2 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H L p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 2.72 2.31 20.71 19.93 5.61 5.16 3.33 3.04 4.63 4.11 18.42 25.15 24.38 6.61 6.09 9.78 9.39 0.51 1.02 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.182 0.725 0.162 0.99 0.96 0.26 0.24 0.385 0.370 0.02 0.04 OUTLINE VERSION 0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785 0.221 0.131 0.203 0.120 REFERENCES IEC JEDEC EIAJ SOT123A September 1992 α 45° EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1992 11