RQK0603CGDQS Silicon N Channel MOS FET Power Switching REJ03G0577-0400 Rev.4.00 Jun 22, 2006 Features • Low on-resistance RDS(on) = 205 mΩ typ (VGS = 10 V, ID = 1.4 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 2, 4 D 2 1 3 1. Gate 2. Drain 3. Source 4. Drain 1G 4 S 3 Note: Marking is “CG”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Symbol VDSS VGSS ID Drain peak current ID (pulse)Note1 Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel dissipation Pch (pulse)Note1 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 1 s, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Rev.4.00 Jun 22, 2006 page 1 of 6 Ratings 60 ±20 2.8 Unit V V A 4.1 2.8 1.5 5 150 –55 to +150 A A W W °C °C RQK0603CGDQS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 60 ±20 — — 1.0 Typ — — — — — Max — — ±10 1 2.0 Unit V V µA µA V Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to source on state resistance RDS(on) — 205 257 mΩ ID = 1.4 A, VGS = 10 VNote3 RDS(on) — 240 336 mΩ ID = 1.4 A, VGS = 4.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg 1.8 — — — — — — — — 3.0 130 24 9.3 7.7 38 42 7.0 2.7 — — — — — — — — — S pF pF pF ns ns ns ns nC ID = 1.4 A, VDS = 10 VNote3 Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Qgs Qgd VDF — — — 0.5 0.4 0.85 — — — nC nC V Rev.4.00 Jun 22, 2006 page 2 of 6 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 10 Ω, Rg = 4.7 Ω VDD = 10 V, VGS = 10 V, ID = 2.8 A IF = 1.5 A, VGS = 0Note3 RQK0603CGDQS Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area 100 1.0 1 PW 1 = 10 µs m s n io at r pe 0 0.1 25 50 75 100 125 0.01 0.01 150 3.2 V 2.5 3.0 V 2.0 1.5 2.8 V 10 V 1.0 2.6 V 0.5 Pulse Test Tc = 25°C 0 2 4 Drain Current ID (A) 3.8 V 4V 5V 7V 10 100 3.0 3.4 V 3.6 V 2.5 1 Typical Transfer Characteristics (1) Typical Output Characteristics 3.0 0.1 Drain to Source Voltage VDS (V) Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) Drain Current ID (A) 0 s Ta = 25°C 1 Shot Pulse 0 0 10 m O 0.5 10 µs 10 C Drain Current ID (A) 1.5 Operation in this area is limited by RDS(on) D Channel Dissipation Pch (W) 2.0 VGS = 0 V 6 8 VDS = 10 V Pulse Test 2.0 1.5 Tc = 75°C 1.0 0.5 25°C 0 0 10 Drain to Source Voltage VDS (V) –25°C 2 1 3 4 5 Gate to Source Voltage VGS (V) 1 Drain Current ID (A) VDS = 10 V Pulse Test 0.1 Tc = 75°C 0.01 25°C –25°C 0.001 0.0001 0 0.5 1 1.5 2 2.5 Gate to Source Voltage VGS (V) Rev.4.00 Jun 22, 2006 page 3 of 6 3 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature 2.5 1 mA 2 ID = 10 mA 1.5 100 µA 1 VDS = 10 V Pulse Test 0.5 –25 0 25 50 75 100 125 Case Temperature Tc (°C) 150 0.8 Pulse Test Tc = 25°C 0.6 ID = 1.5 A 0.4 1A 0.2 0.5 A 0.2 A 0.1 A 0 0 2 4 6 8 10 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1 Pulse Test Tc = 25°C 0.3 VGS = 4.5 V 10 V 0.1 0.1 1 10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature 200 Pulse Test VGS = 4.5 V ID = 1.5 A 1A 150 0.5 A 100 0.2 A 50 0 –25 0 25 50 75 100 125 150 Pulse Test VGS = 10 V ID = 1.5 A 150 1A 100 0.5 A 0.2 A 50 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature Pulse Test VDS = 10 V Tc = –25°C 25°C 0.1 0.1 200 Case Temperature Tc (°C) 10 1 Drain to Source on State Resistance RDS(on) (mΩ) Gate to Source Voltage VGS (V) 75°C 1 Drain Current ID (A) Rev.4.00 Jun 22, 2006 page 4 of 6 10 Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (V) RQK0603CGDQS 10000 1000 Pulse Test VGS = 0 V VDS = 60 V 100 10 1 0.1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQK0603CGDQS Switching Characteristics ID = 2.8 A Tc = 25°C 80 25 V 60 VDS 12 50 V VGS 40 8 VDD = 50 V 20 0 4 25 V 10 V 0 0.8 1.6 2.4 3.2 0 4.0 VDD = 10 V VGS = 10 V Rg = 4.7 Ω PW = 5 µs Tc = 25°C 100 td(off) tf tr 1 0.01 0.1 10 1.0 Gate Charge Qg (nC) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage VGS = 0 V f = 1 MHz 210 Ciss 200 Ciss (pF) 100 Coss 10 190 180 170 Crss 160 0 5 10 15 20 25 5 10 Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature Pulse Test Tc = 25°C 10 V 5V 1.5 1.0 0.5 VGS = 0 V, –5 V–10 V 0 0 Gate to Source Voltage VGS (V) 2.0 0 –5 Drain to Source Voltage VDS (V) 3.0 2.5 VDS = 0 V f = 1 MHz 150 –10 30 0.4 0.8 1.2 1.6 Source Drain Voltage VSD (V) Rev.4.00 Jun 22, 2006 page 5 of 6 2.0 Body-Drain Diode Forward Voltage VSDF (V) 1 Reverse Drain Current IDR (A) td(on) 10 220 1000 Ciss, Coss, Crss (pF) 16 VDD = 10 V 1000 Switching Time t (ns) 20 100 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 0.8 VGS = 0 0.7 0.6 ID = 10 mA 0.5 0.4 1 mA 0.3 0.2 0.1 –25 0 25 50 75 100 125 Case Temperature Tc (°C) 150 RQK0603CGDQS Package Dimensions 1.5 1.5 3.0 MASS[Typ.] 0.050g 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Previous Code UPAK / UPAKV Unit: mm (1.5) 0.44 Max (0.2) RENESAS Code PLZZ0004CA-A (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK Ordering Information Part Name RQK0603CGDQSTL-E Quantity 1000 pcs. Rev.4.00 Jun 22, 2006 page 6 of 6 Shipping Container φ178 reel, 12 mm Emboss taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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