H7N0312LD, H7N0312LS, H7N0312LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1128-0300 (Previous: ADE-208-1572A) Rev.3.00 Apr 07, 2006 Features • Low on-resistance RDS (on) = 2.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 4 1 1 2 1. Gate 2. Drain 3. Source 4. Drain 2 3 3 H7N0312LD H7N0312LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) D 4 G 1 2 3 H7N0312LM Rev.3.00 Apr 07, 2006 page 1 of 7 S H7N0312LD, H7N0312LS, H7N0312LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Symbol VDSS Value 30 Unit V VGSS ID ±20 85 V A 340 85 A A Pch θ ch-c 125 1.0 W °C/W Tch Tstg 150 –55 to +150 °C °C Note 1 Drain peak current Body to drain diode reverse drain current ID (pulse) IDR Note 2 Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS 30 ±20 — — — — V V ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 Gate to source leak current Zero gate voltage drain current IGSS IDSS — — — — ±10 10 µA µA VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) 1.0 — — 2.6 2.5 3.3 V mΩ ID = 1 mA, VDS = 10 V Note 3 ID = 42.5 A, VGS = 10 V |yfs| — 75 4.0 125 5.8 — mΩ S ID = 42.5 A, VGS = 4.5 V Note 3 ID = 42.5 A, VDS = 10 V Input capacitance Output capacitance Ciss Coss — — 6900 1750 — — pF pF Reverse transfer capacitance Total gate charge Crss Qg — — 820 115 — — pF nC VDS = 10 V VGS = 0 f = 1 MHz Gate to source charge Gate to drain charge Qgs Qgd — — 24 24 — — nC nC Turn-on delay time Rise time td (on) tr — — 45 380 — — ns ns Turn-off delay time Fall time td (off) tf — — 125 50 — — ns ns Body to drain diode forward voltage Body to drain diode reverse recovery time VDF trr — — 0.92 75 — — V ns Drain to source breakdown voltage Gate to source breakdown voltage Forward transfer admittance Note: 3. Pulse test Rev.3.00 Apr 07, 2006 page 2 of 7 Test Conditions Note 3 Note 3 VDD = 10 V VGS = 10 V ID = 85 A VGS = 10 V, ID = 42.5 A RL = 0.24 Ω Rg = 4.7 Ω IF = 85 A, VGS = 0 IF = 85 A, VGS = 0 diF/dt = 50 A/µs H7N0312LD, H7N0312LS, H7N0312LM Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area (A) 1000 ID 120 Drain Current Channel Dissipation Pch (W) 160 80 40 10 1m 100 DC 0 50 100 PW = 10 on ati 1 0.1 Tc (°C) 10 V 5V 4V 80 1 3 10 30 100 VDS (V) Typical Transfer Characteristics 100 Pulse Test VDS = 10 V Pulse Test 3.5 V ID (A) 100 0.3 Drain to Source Voltage Typical Output Characteristics 3.2 V 60 80 Drain Current 60 3.0 V 40 2.8 V 20 40 Tc = 75°C 25°C 20 –25°C VGS = 2.5 V 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 VDS (V) Pulse Test 400 300 200 ID = 50 A 100 20 A 10 A 0 0 4 8 12 Gate to Source Voltage Rev.3.00 Apr 07, 2006 page 3 of 7 16 20 VGS (V) 2 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) 500 1 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (mV) ms Operation in this area is limited by RDS (on) 0.01 0.1 200 150 Case Temperature ID (A) s 100 µs Tc = 25°C 1 shot Pulse 0 Drain Current Op er 10 µs 100 Pulse Test 50 20 10 VGS = 4.5 V 5 2 1 0.1 0.3 10 V 1 3 10 Drain Current 30 100 300 1000 ID (A) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) H7N0312LD, H7N0312LS, H7N0312LM 7 Pulse Test ID = 50 A 6 5 VGS = 4.5 V ID = 10 A, 20 A 4 3 10 A, 20 A, 50 A 2 10 V 1 0 –25 0 25 50 75 100 125 150 Case Temperature Tc 1000 300 Tc = –25°C 100 30 75°C 10 25°C 3 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 3 10 100 10000 50 20 10 0.1 3000 Coss 1000 Crss 300 VGS = 0 f = 1 MHz 100 0.3 1 3 10 Reverse Drain Current 30 100 0 12 20 8 10 4 VDD = 25 V 10 V 5V 0 0 40 80 Gate Charge Rev.3.00 Apr 07, 2006 page 4 of 7 120 160 Qg (nc) 15 20 25 30 0 200 1000 Switching Time t (ns) 30 V DS VGS (V) 16 Gate to Source Voltage (V) VDS VGS VDD = 5 V 10 V 25 V 10 Switching Characteristics 20 ID = 85 A 5 Drain to Source Voltage VDS (V) IDR (A) Dynamic Input Characteristics 40 100 Ciss di / dt = 50 A / µs VGS = 0, Ta = 25°C 50 30 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) Reverse Recovery Time trr (ns) 1 Drain Current ID (A) (°C) Body to Drain Diode Reverse Recovery Time Drain to Source Voltage 0.3 500 tr td(off) 200 100 50 tf td(on) 20 10 0.1 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100 H7N0312LD, H7N0312LS, H7N0312LM Reverse Drain Current vs. Souece to Drain Voltage Reverse Drain Current IDR (A) 100 10 V 80 VGS = 0 V 5V 60 40 20 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 VSD (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c 0.1 θch – c = 1.0°C/W, Tc = 25°C 0.05 0.02 0.03 PDM 1 e 0.0 puls t o h 1s D= PW T PW T 0.01 10 µ 100 µ 1m 10 m 100 m Pulse Width PW (S) Rev.3.00 Apr 07, 2006 page 5 of 7 1 10 H7N0312LD, H7N0312LS, H7N0312LM Package Dimensions RENESAS Code PRSS0004AE-A MASS[Typ.] 1.40g 4.44 ± 0.2 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B 2.49 ± 0.2 11.0 ± 0.5 0.2 0.86 +– 0.1 Package Name LDPAK(S)-(1) Unit: mm 10.2 ± 0.3 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 Previous Code LDPAK(L) / LDPAK(L)V Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] 1.30g (1.5) 10.0 Rev.3.00 Apr 07, 2006 page 6 of 7 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 JEITA Package Code (1.4) Package Name LDPAK(L) 2.2 H7N0312LD, H7N0312LS, H7N0312LM JEITA Package Code RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g 7.8 6.6 (2.3) 10.0 2.49 ± 0.2 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(2) 0.2 0.1 +– 0.1 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 5.0 +– 0.5 1.3 ± 0.2 Ordering Information Part Name H7N0312LD-E H7N0312LSTL-E Quantity 500 pcs 1000 pcs Shipping Container Box (Conductive Sack) Taping H7N0312LMTL-E 1000 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Apr 07, 2006 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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