RENESAS H7N0405LD

H7N0405LD, H7N0405LS, H7N0405LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1367-0100
Rev.1.00
Sep 25, 2006
Features
• Low on-resistance
RDS(on) = 4.0 mΩ typ.
• Low drive current.
• Capable of 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
4
1
1
2
2
1. Gate
2. Drain
3. Source
4. Drain
3
3
H7N0405LD
H7N0405LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
D
4
G
1
2
3
H7N0405LM
Rev.1.00 Sep 25, 2006 page 1 of 7
S
H7N0405LD, H7N0405LS, H7N0405LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAPNote3
EARNote3
PchNote2
Tch
Tstg
Rating
40
±20
80
320
80
40
213
80
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source break down voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cut off voltage
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer admittance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-off delay time
Rise time
Body-drain diode forward voltage
Fall time
Body-drain diode forward voltage
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
Body-drain diode reverse recovery
time
Notes: 4. Pulse test
Rev.1.00 Sep 25, 2006 page 2 of 7
trr
Min
40
±20
—
—
1.5
—
—
54
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
4.0
6.2
90
5600
825
550
100
25
25
40
400
100
26
0.94
40
Max
—
—
±10
10
2.5
5.0
8.7
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 40 V, VGS = 0
ID = 1 mA, VDS = 10 VNote4
ID = 40 A, VGS = 10 VNote4
ID = 40 A, VGS = 4.5 VNote4
ID = 40 A, VGS = 10 VNote4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 25 V, VGS = 10 V,
ID = 80 A
VGS = 10 V, ID = 40 A,
RL = 0.75 Ω, Rg = 4.7 Ω
IF = 80 A, VGS = 0
IF = 80 A, VGS = 0
diF/dt = 100 A/µs
H7N0405LD, H7N0405LS, H7N0405LM
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
120
40
µs
s
100
30
10
DC Operation
(Tc = 25°C)
3
1
0.3
Operation in
this area is
limited by RDS(on)
0.1
PW = 10 ms
(1 shot)
0.03
50
100
150
200
3
30
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
100
80
Ta = 25°C
0.01
0.1 0.3
1
100
4.4 V
VDS = 10 V
Pulse Test
6V
10 V
4.0 V
60
40
VGS = 3.6 V
20
Drain Current ID (A)
0
Drain Current ID (A)
0µ
s
80
10
10
m
Drain Current ID (A)
300
1
Channel Dissipation Pch (W)
160
80
60
40
–40°C
20
25°C
Pulse Test
2
4
6
8
0
10
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
30
10
VGS = 4.5 V
10 V
3
1
1
3
10
30
Drain Current ID (A)
Rev.1.00 Sep 25, 2006 page 3 of 7
100
Static Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source On State Resistance
RDS(on) (mΩ)
0
Tc = 150°C
15
Pulse Test
10
10, 20, 50 A
4.5 V
5
10, 20, 50 A
VGS = 10 V
0
–50
0
50
100
Case Temperature Tc (°C)
150
H7N0405LD, H7N0405LS, H7N0405LM
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
300
Crss
100
30 V = 0
GS
f = 1 MHz
10
0
10
20
30
40
Reverse Drain Current IDR (A)
40
VGS
VDD = 40 V
25 V
10 V
60
8
4
VDD = 40 V
25 V
10 V
40
80
120
160
0
200
Drain to Source Voltage VDS (V)
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
10 V
60
5V
40
VGS = 0, –5 V
20
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
250
Normalized Transient Thermal Impedance γs (t)
IAP = 40 A
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
200
150
100
50
0
25
50
75
100
125
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
0.5
0.3 0.2
0.1
0.1
0.03
θch - c(t) = γs (t) • θch - c
θch - c = 1.56°C/ W, Tc = 25°C
0.05
2
0.0
1
0.0
h
1s
0.01
10 µ
ot
p
PDM
e
uls
D=
PW
T
PW
T
100 µ
1m
10 m
100 m
Pulse Width PW (s)
Rev.1.00 Sep 25, 2006 page 4 of 7
150
Channel Temperature Tch (°C)
Source to Drain Voltage VSD (V)
1
16
12
VDS
20
0
100
80
80
50
Repetitive Avalanche Energy EAR (mJ)
Capacitance C (pF)
3000
20
ID = 80 A
Drain to Source Voltage VDS (V)
Ciss
1
10
100
Gate to Source Voltage VGS (V)
10000
Dynamic Input Characteristics
100
H7N0405LD, H7N0405LS, H7N0405LM
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
VDS
Monitor
1
2
VDSS
• L • IAP2 •
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 30 V
90%
td(on)
Rev.1.00 Sep 25, 2006 page 5 of 7
10%
tr
90%
td(off)
tf
H7N0405LD, H7N0405LS, H7N0405LM
Package Dimensions
• H7N0405LD
JEITA Package Code

RENESAS Code
PRSS0004AE-A
MASS[Typ.]
1.40g
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
Previous Code
LDPAK(L) / LDPAK(L)V
4.44 ± 0.2
(1.4)
Package Name
LDPAK(L)
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
0.4 ± 0.1
• H7N0405LS
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.]
1.30g
(1.5)
10.0
Rev.1.00 Sep 25, 2006 page 6 of 7
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(1)
2.2
H7N0405LD, H7N0405LS, H7N0405LM
• H7N0405LM
JEITA Package Code

RENESAS Code
PRSS0004AE-C
Previous Code
LDPAK(S)-(2) / LDPAK(S)-(2)V
MASS[Typ.]
1.35g
7.8
6.6
(2.3)
10.0
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(2)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Ordering Information
Part Name
H7N0405LD-E
H7N0405LSTL-E
H7N0405LMTL-E
Quantity
500 pcs
1000 pcs
1000 pcs
Shipping Container
Box (Conductive Sack)
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00 Sep 25, 2006 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .6.0