TK13P25D MOSFETs Silicon N-Channel MOS (π-MOS) 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) DPAK unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Symbol Rating Unit Drain-source voltage VDSS 250 V Gate-source voltage VGSS ±20 Characteristics A Drain current (DC) (Note 1) ID 13 Drain current (pulsed) (Note 1) IDP 52 PD 96 W Power dissipation (Tc = 25) Single-pulse avalanche energy (Note 2) EAS 78 mJ Avalanche current (Note 3) IAR 13 A Reverse drain current (DC) (Note 1) IDR 13 Reverse drain current (pulsed) (Note 1) IDRP 52 Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: 1/8 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. www.freescale.net.cn 5. Thermal Characteristics Characteristics Symbol Max Unit /W Channel-to-case thermal resistance Rth(ch-c) 1.3 Channel-to-ambient thermal resistance Rth(ch-a) 125 Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 50 V, Tch = 25 (initial), L = 0.77 mH, RG = 25 Ω, IAR = 13 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature Note: 2/8 This transistor is sensitive to electrostatic discharge and should be handled with care. www.freescale.net.cn 6. Electrical Characteristics unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol Test Condition IGSS VGS = ±20 V, VDS = 0 V IDSS VDS = 250 V, VGS = 0 V Min Typ. Max Unit ±1 µA 10 ID = 10 mA, VGS = 0 V 250 Vth VDS = 10 V, ID = 1 mA 1.5 3.5 RDS(ON) VGS = 10 V, ID = 6.5 A 0.19 0.25 Ω Min Typ. Max Unit 1100 pF V(BR)DSS V unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Input capacitance Symbol Ciss Test Condition VDS = 100 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss 8 Output capacitance Coss 66 Gate resistance rg VDS = OPEN, f = 1 MHz 5 Ω Switching time (rise time) tr See Figure 6.2.1. 40 ns Switching time (turn-on time) ton 55 tf 20 toff 130 Switching time (fall time) Switching time (turn-off time) Fig. 6.2.1 Switching Time Test Circuit unless otherwise specified) 6.3. Gate Charge Characteristics (Ta = 25 25 Characteristics Total gate charge (gate-source plus gate-drain) Symbol Qg Test Condition VDD ≈ 200 V, VGS = 10 V, ID = 13 A Min Typ. Max Unit 25 nC Gate-source charge 1 Qgs1 4.2 Gate-drain charge Qgd 8.5 unless otherwise specified) 25 6.4. Source-Drain Characteristics (Ta = 25 Characteristics Symbol Test Condition Min Typ. Max Unit Diode forward voltage VDSF IDR = 13 A, VGS = 0 V -1.7 V Reverse recovery time trr 180 ns Reverse recovery charge Qrr IDR = 13 A, VGS = 0 V -dIDR/dt = 100 A/µs 1.1 µC Peak reverse recovery current Irr 12 A 3/8 www.freescale.net.cn 7. Marking Fig. 7.1 Marking 4/8 www.freescale.net.cn 8. Characteristics Curves (Note) 5/8 Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 |Yfs| - ID Fig. 8.6 RDS(ON) - ID www.freescale.net.cn 6/8 Fig. 8.7 RDS(ON) - Ta Fig. 8.8 IDR - VDS Fig. 8.9 C - VDS Fig. 8.10 Vth - Ta Fig. 8.11 PD - Tc (Guaranteed Maximum) Fig. 8.12 Dynamic Input/Output Characteristics www.freescale.net.cn Fig. 8.13 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.14 Safe Operating Area (Guaranteed Maximum) Fig. 8.15 EAS - Tch (Guaranteed Maximum) Fig. 8.16 Test Circuit/Waveform 7/8 www.freescale.net.cn Package Dimensions 8/8 Unit: mm www.freescale.net.cn