2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 (Previous: ADE-208-571B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 G 1. Source 2. Gate 3. Drain 2 S Note: Marking is “ZZ–” Rev.4.00 Sep 07, 2005 page 1 of 6 2SK2980 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS Ratings 30 +12 –10 1.0 4 0.8 150 –55 to +150 Drain current ID Drain peak current ID(pulse)Note1 Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm) Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 30 +12 –10 Typ — — — Max — — — Unit V V V Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage IDSS IGSS VGS(off) Static drain to source on state resistance RDS(on) — — 0.5 — — — — 0.2 1.0 ±5.0 1.5 0.28 µA µA V Ω VDS = 30 V, VGS = 0 VGS = ±8 V, VDS = 0 ID = 10 µA, VDS = 5 V ID = 500 mA, VGS = 4 V Note3 Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Note: 3. Pulse test RDS(on) — 0.3 0.5 Ω ID = 500 mA, VGS = 2.5 V Note3 |yfs| Ciss Coss Crss td(on) tr td(off) tf 1.2 — — — — — — — 2.0 155 75 35 12 30 35 30 — — — — — — — — S pF pF pF ns ns ns ns ID = 500 mA, VDS = 10 V Note3 Rev.4.00 Sep 07, 2005 page 2 of 6 Test Conditions ID = 100 µA, VGS = 0 IG = +100 µA, VDS = 0 IG = –100 µA, VDS = 0 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 4 V, ID = 500 mA, RL = 20 Ω 2SK2980 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 Test condition : When using alumina ceramic board (12.5 x 20 x 0.7 mm) 1.2 0.8 0.4 0 50 100 150 30 Drain Current ID (A) Channel Dissipation Pch (W) 1.6 200 10 µs 100 µs 3 1 m s = 1 (1 0 m DC 0.3 sh s Op ot ) Operation in e 0.1 ra tio this area is n limited by RDS(on) 0.03 Ta = 25°C 0.01 3 0.1 0.3 1 10 30 PW 1 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 1.0 4V 2.5 V Drain Current ID (A) Pulse Test 0.8 2V 0.6 1.8 V 0.4 0.2 0.8 25°C 75°C 0.6 Tc = –25°C 0.4 0.2 VDS = 10 V Pulse Test VGS = 1.5 V 2 4 6 8 1 2 3 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.4 0.3 0.2 ID = 1 A 0.5 A 0.1 0.2 A 0 0 10 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.4.00 Sep 07, 2005 page 3 of 6 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 0 100 Ambient Temperature Ta (°C) 1.0 Drain Current ID (A) 10 5 2 Pulse Test 1 0.5 VGS = 2.5 V 0.2 4V 0.1 0.05 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 Static Drain to Source on State Resistance vs. Temperature 0.5 ID = 0.1 A, 0.2 A, 0.5 A 0.4 VGS = 2.5 V 0.3 0.1 A, 0.2 A, 0.5 A 4V 0.1 Pulse Test 0 40 80 Case Temperature 120 Tc 160 2 Tc = –25°C 1 25°C 0.5 75°C 0.2 0.1 0.05 0.01 0.02 (°C) Capacitance C (pF) Drain to Source Voltage VDS (V) VGS = 0 f = 1 MHz Coss 100 Ciss 50 Crss 20 10 5 0 10 20 30 40 50 16 30 10 Reverse Drain Current IDR (A) Switching Time t (ns) tr td(on) 10 5 VGS = 4 V, VDD = 10 V PW = 2 µs, duty < 1 % 0.2 0.5 1 Drain Current Rev.4.00 Sep 07, 2005 page 4 of 6 2 ID (A) 4 VDD = 20 V 10 V 5V 2 4 6 8 0 10 Qg (nc) Reverse Drain Current vs. Source to Drain Voltage tf 1 0.1 8 VGS Gate Charge 100 2 12 V DD = 5 V 10 V 20 V VDS 20 (V) 200 20 20 40 Switching Characteristics td(off) 1 0.5 ID = 1 A 0 50 Drain to Source Voltage VDS 50 0.2 Dynamic Input Characteristics 1000 200 0.05 0.1 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 500 VDS = 10 V Pulse Test 5 10 1.0 0.8 0.6 VGS = 0 5V 0.4 0.2 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) VGS (V) 0 –40 5 Gate to Source Voltage 0.2 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) 2SK2980 2SK2980 Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL Vin Vout Vin 4V 50 Ω VDD = 10 V 10% 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 5 of 6 10% tr 90% td(off) tf 2SK2980 Package Dimensions JEITA Package Code RENESAS Code Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A SC-59A D MASS[Typ.] 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SK2980ZZ-TL-E 2SK2980ZZ-TR-E Quantity 3000 pcs 3000 pcs Shipping Container Taping Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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