SEMIWELL STF6A80

STF6A80
SemiWell Semiconductor
UL : E228720
Bi-Directional Triode Thyristor
Symbol
○
Features
2.T2
▼▲
Repetitive Peak Off-State Voltage : 800V
R.M.S On-State Current ( IT(RMS)= 6 A )
◆ High Commutation dv/dt
◆ Isolation Voltage ( VISO = 1500V AC )
◆
○
◆
1.T1
3.Gate
○
TO-220F
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable requirements by Underwriters Laboratories Inc.
Absolute Maximum Ratings
Symbol
1
2
3
( TJ = 25°C unless otherwise specified )
Condition
Ratings
Units
Repetitive Peak Off-State Voltage
Sine wave, 50 to 60 Hz, Gate open
800
V
IT(RMS)
R.M.S On-State Current
TC = 94 °C, Full Sine wave
6.0
A
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
60/66
A
I2t for Fusing
tp = 10ms
18
A 2s
Peak Gate Power Dissipation
TC = 94 °C, Pulse width ≤ 1.0us
3.0
W
Average Gate Power Dissipation
Over any 20ms period
0.3
W
IGM
Peak Gate Current
tp = 20us, TJ=125°C
2.0
A
VGM
Peak Gate Voltage
tp = 20us, TJ=125°C
10
V
VISO
Isolation Breakdown Voltage(R.M.S.)
A.C. 1 minute
1500
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
2.0
g
VDRM
I2 t
PGM
PG(AV)
TJ
TSTG
Parameter
Mass
Aug, 2003. Rev. 0
1/6
[email protected] Semiconductor Co., Ltd., All rights reserved.
STF6A80
Electrical Characteristics
Symbol
Items
Conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
─
─
1.0
mA
VTM
Peak On-State Voltage
IT = 8 A, Inst. Measurement
─
─
1.5
V
─
─
20
─
─
20
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
─
─
20
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
VGD
(dv/dt)c
IH
Rth(j-c)
Gate Trigger Current
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
mA
V
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
0.2
─
─
V
Critical Rate of Rise Off-State
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -3.0 A/ms,
VD=2/3 VDRM
5.0
─
─
V/㎲
─
10
─
mA
─
─
3.8
°C/W
Holding Current
Thermal Impedance
Junction to case
※ Notes :
1. Pulse Width ≤ 300us , Duty cycle ≤ 2%
2/6
Ratings
STF6A80
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
2
10
VGM (10V)
1
On-State Current [A]
PGM (3W)
PG(AV) (0.3W)
25 ℃
0
10
IGM (2A)
Gate Voltage [V]
10
o
TJ = 125 C
1
10
o
TJ = 25 C
0
10
VGD (0.2V)
-1
10
1
2
10
3
10
0.5
10
1.0
1.5
2.5
3.0
3.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
10
Allowable Case Temperature [ oC]
130
9
Power Dissipation [W]
2.0
On-State Voltage [V]
Gate Current [mA]
θ
π
8
o
θ = 180
o
θ = 150
2π
θ
7
θ = 120
360°
6
θ = 90
θ : Conduction Angle
5
4
o
o
θ = 60
o
θ = 30
o
3
2
120
110
θ
π
θ = 30
2π
θ
360°
100
1
2
3
4
5
6
7
θ = 90
o
o
o
θ = 150
o
θ = 180
1
0
θ = 60
θ = 120
θ : Conduction Angle
0
o
o
90
8
0
1
2
RMS On-State Current [A]
3
4
5
6
7
8
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
80
60
30
50Hz
V
_
GT3
o
o
40
VGT (25 C)
60Hz
50
VGT (t C)
Surge On-State Current [A]
70
1
V
V
+
GT1
_
GT1
20
10
0
0
10
1
10
Time (cycles)
2
10
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/6
STF6A80
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
o
o
IGT (t C)
IGT (25 C)
o
Transient Thermal Impedance [ C/W]
10
I
1
I
I
0.1
-50
0
50
+
GT1
_
GT1
_
GT3
100
1
-2
150
10
-1
0
10
o
1
10
10
Time (sec)
Junction Temperature [ C]
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
▼▲
6V
▼▲
●
A
V
4/6
10Ω
▼▲
●
6V
RG
A
V
●
6V
RG
A
V
●
●
●
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
RG
2
10
STF6A80
TO-220F Package Dimension
Dim.
mm
Typ.
Min.
10.4
6.18
9.55
13.47
6.05
1.26
3.17
1.87
2.57
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Max.
10.6
6.44
9.81
13.73
6.15
1.36
3.43
2.13
2.83
Inch
Typ.
Min.
0.409
0.243
0.376
0.530
0.238
0.050
0.125
0.074
0.101
2.54
5.08
0.100
0.200
2.51
1.25
0.45
0.6
2.62
1.55
0.63
1.0
φ
φ1
φ2
0.099
0.049
0.018
0.024
0.103
0.061
0.025
0.039
3.7
3.2
1.5
0.146
0.126
0.059
A
E
F
Max.
0.417
0.254
0.386
0.540
0.242
0.054
0.135
0.084
0.111
I
H
B
φ
φ1
C
φ2
L
G
M
1
2
D
1. T1
2. T2
3. Gate
3
J
N
O
K
5/6
STF6A80
TO-220F Package Dimension, Forming
Dim.
mm
Typ.
Min.
10.4
6.18
9.55
8.4
6.05
1.26
3.17
1.87
2.57
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Max.
10.6
6.44
9.81
8.66
6.15
1.36
3.43
2.13
2.83
Inch
Typ.
Min.
0.409
0.243
0.376
0.331
0.238
0.050
0.125
0.074
0.101
2.54
5.08
0.100
0.200
2.51
1.25
0.45
0.6
2.62
1.55
0.63
1.0
0.099
0.049
0.018
0.024
0.103
0.061
0.025
0.039
5.0
3.7
3.2
1.5
φ
φ1
φ2
0.197
0.146
0.126
0.059
A
E
F
I
H
B
φ
φ1
C
φ2
L
G
M
1
D
2
3
N
O
J
P
K
6/6
Max.
0.417
0.254
0.386
0.341
0.242
0.054
0.135
0.084
0.111
1. T1
2. T2
3. Gate