Preliminary Data Sheet μ PA2593 R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2593 is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features • 4.5 V drive available • Low on-state resistance N-channel ⎯ RDS(on)1 = 58 mΩ MAX. (VGS = 10 V, ID = 2 A) ⎯ RDS(on)2 = 103 mΩ MAX. (VGS = 4.5 V, ID = 2 A) P-channel ⎯ RDS(on)1 = 140 mΩ MAX. (VGS = −10 V, ID = −2 A) ⎯ RDS(on)2 = 195 mΩ MAX. (VGS = −4.5 V, ID = −2 A) • Built-in gate protection diode • Small and surface mount package (8-pin VSOF (2429)) Ordering Information Part No. μ PA2593T1H-T1-AT ∗1 μ PA2593T1H-T2-AT ∗1 LEAD PLATING Pure Sn (Tin) PACKING 8 mm embossed taping 3000 p/reel Package 8-pin VSOF (2429) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.) Marking: 2593 Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (1 unit, 5 s) ∗2 Total Power Dissipation (2 unit, 5 s) ∗2 Channel Temperature Storage Temperature Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg N-CHANNEL 40 ±18 ±4.5 ±18 P-CHANNEL −40 m18 m3.5 m18 1.5 1.24 150 −55 to +150 Unit V V A A W W °C °C Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 Page 1 of 10 μ PA2593 Chapter Title Electrical Characteristics (TA = 25°C) N-channel MOSFET Item Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Typ Max 1 ±10 2.5 50 70 315 70 38 5 3 21 3 7 58 103 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG Body Diode Forward Voltage ∗1 VF(S-D) 0.9 Drain to Source On-state Resistance ∗1 Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 Min 1.0 2.0 Unit μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC V Test Conditions VDS = 40 V, VGS = 0 V VGS = ±14 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 5 V, ID = 2 A VGS = 10 V, ID = 2 A VGS = 4.5 V, ID = 2 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 2 A, VGS = 10 V, RG = 6 Ω VDD = 32 V, VGS = 10 V ID = 4.5 A IF = 4.5 A, VGS = 0 V Note: ∗1. Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL RG PG. VGS VGS Wave Form 0 VGS 10% IG = 2 mA RL 50 Ω VDD VDD 90% ID 90% ID VGS 0 D.U.T. 90% ID 0 10% PG. 10% Wave Form τ τ = 1 μs Duty Cycle ≤ 1% R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 td(on) tr ton td(off) tf toff Page 2 of 10 μ PA2593 Chapter Title P-channel MOSFET Item Zero Gate Voltage Drain Current Symbol IDSS Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 IGSS VGS(off) | yfs | RDS(on)1 Min Typ −1.0 2.0 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG 115 135 350 60 47 5.5 3.5 40 8 8 Body Diode Forward Voltage ∗1 VF(S-D) 0.95 Drain to Source On-state Resistance ∗1 Max −1 Unit μA Test Conditions VDS = −40 V, VGS = 0 V m10 −2.5 μA VGS = m14 V, VDS = 0 V VDS = −10 V, ID = −1 mA VDS = −5 V, ID = −2 A VGS = −10 V, ID = −2 A VGS = −4.5 V, ID = −2 A VDS = −10 V, VGS = 0 V, f = 1 MHz VDD = −20 V, ID = −2 A, VGS = −10 V, RG = 6 Ω 140 195 V S mΩ mΩ pF pF pF ns ns ns ns nC V VDD = −32 V, VGS = −10 V ID = −3.5 A IF = −3.5 A, VGS = 0 V Note: ∗1. Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS (−) RL VGS RG PG. Wave Form 0 VGS 10% IG = −2 mA RL 50 Ω VDD 90% PG. VDD VDS (−) 90% 90% VDS VGS (−) 0 VDS τ τ = 1 μs Duty Cycle ≤ 1% R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 10% 0 10% Wave Form td(on) tr ton td(off) tf toff Page 3 of 10 μ PA2593 Chapter Title Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA AMBIENT TEMPERATURE 120 2 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % (1) N-channel MOSFET 100 80 60 40 20 Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt 1.5 1 unit, 5 s 1 2 units, 5 s 0.5 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 PW ID - Drain Current - A ID(pulse) 10 11 ID(DC) 11 1 R 0.1 o S( n) (V 00 0 5 1 m 1 m 1 ) m Li 0 V 11 = S 1 D d it e 11 s m = 11 s 00 30 μs 0 μs s s G TA = 25°C Single Pulse Mounted on FR-4 board of 25.4 mm × 25.4 mm × 0.8 mmt 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 PD (FET1) : PD (FET2) = 1:1 100 PD (FET1) : PD (FET2) = 1:0 10 1 0.1 0.01 100 μ Single Pulse Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 Page 4 of 10 μ PA2593 Chapter Title DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 10 20 ID - Drain Current - A ID - Drain Current - A 25 VGS = 10 V 15 4.5 V 10 5 Tch = -50°C -25°C 0°C 25°C 75°C 125°C 150°C 1 0.1 0.01 V DS = 10 V Pulsed Pulsed 0.001 0 0 0.5 1 1.5 0 VDS - Drain to Source Voltage - V 4 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CHANNEL TEMPERATURE CURRENT 3 2 1 VDS = 10 V ID = 1 mA 0 -25 25 75 125 175 10 Tch = −55°C −25°C 0°C 25°C 75°C 125°C 150°C 1 VDS = 5 V Pulsed 0.1 0.01 0.1 Tch - Channel Temperature - °C 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 120 Pulsed 100 80 VGS = 4.5 V 60 10 V 40 20 0 0.1 1 10 ID - Drain Current - A R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 3 GATE CUT-OFF VOLTAGE vs. | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 2 VGS - Gate to Source Voltage - V 4 -75 1 120 ID = 2 A Pulsed 100 80 60 40 20 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 5 of 10 μ PA2593 Chapter Title DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 120 100 80 VGS = 4.5 V 60 10 V 40 20 ID = 2 A Pulsed Ciss, Coss, Crss - Capacitance - pF 0 100 Coss Crss 10 -75 -25 25 75 125 175 0.1 1 Tch - Channel Temperature - °C VDD = 20 V VGS = 10 V RG = 6 Ω td(off) tf 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on) tr 1 35 VDS - Drain to Source Voltage - V 100 10 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS VDS - Drain to Source Voltage - V Ciss 14 30 12 VDD = 32 V 20 V 8V 25 20 10 8 VGS 15 6 10 4 5 2 VDS ID = 4.5 A 0 0.1 1 10 100 ID - Drain Current - A 0 0 1 2 3 4 5 6 7 8 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 100 VGS = 10 V 10 4.5 V 1 0V 0.1 Pulsed 0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 Page 6 of 10 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE μ PA2593 Chapter Title DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA AMBIENT TEMPERATURE 120 2 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % (2) P-channel MOSFET 100 80 60 40 20 Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt 1.5 1 unit, 5 s 1 2 units, 5 s 0.5 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA -100 PW ID - Drain Current - A ID(pulse) -10 -1 -0.1 11 d it e im V ) L ) 0 on 11 S( = D R GS V ( 11 00 1 5 11 0 1 m 1 m 1 s m = 11 00 30 μs 0 μs s s s TA = 25°C Single Pulse Mounted on a FR-4 board of 25.4 mm × 25.4 mm × 0.8 mmt -0.01 -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 PD (FET1) : PD (FET2) = 1:1 100 PD (FET1) : PD (FET2) = 1:0 10 1 100 μ Single Pulse Mounted on FR-4 board of 25.4mm x 25.4mm x 0.8mmt 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 Page 7 of 10 μ PA2593 Chapter Title DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE -10 -20 ID - Drain Current - A ID - Drain Current - A -25 VGS = −10 V -15 −4.5 V -10 -5 Pulsed -0 -0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 VDS = −10 V Pulsed -1 Tch = −50°C −25°C 25°C 0°C 75°C 125°C 150°C -0.1 -0.01 -0.001 -4 -0 VDS - Drain to Source Voltage - V -4 FORWARD TRANSFER ADMITTANCE vs. CHANNEL TEMPERATURE DRAIN CURRENT -2.5 -2 -1.5 -1 -0.5 VDS = −10 V ID = −1 mA -25 25 75 125 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V -3 GATE CUT-OFF VOLTAGE vs. -0 175 10 Tch = −55°C −25°C 0°C 25°C 75°C 125°C 150°C 1 0.1 -0.01 Tch - Channel Temperature - °C VDS = −5 V Pulsed -0.1 -1 -10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 300 Pulsed 250 200 150 VGS = −4.5 V 100 −10 V 50 0 -0.1 -1 -10 ID - Drain Current - A R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 -100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ -2 VGS - Gate to Source Voltage - V -3 -75 -1 300 ID = −2 A Pulsed 250 200 150 100 50 0 -0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V Page 8 of 10 μ PA2593 Chapter Title DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 300 1000 Ciss, Coss, Crss - Capacitance - pF 250 200 VGS = −4.5 V 150 −10 V 100 50 ID = −2 A Pulsed 0 -75 -25 25 75 125 100 -1 Tch - Channel Temperature - °C 100 -35 VDS - Drain to Source Voltage - V td(on) tr 1 -14 -30 -12 VDD = −32 V −20 V −8 V -25 -20 -10 -1 -10 -100 ID - Drain Current - A -8 VGS -15 -6 -10 -4 -5 -2 VDS ID = −3.5 A 0 -0.1 -100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS tf 10 -10 VDS - Drain to Source Voltage - V VDD = −20 V VGS = −10 V RG = 6 Ω td(off) Coss Crss VGS = 0 V f = 1 MHz 10 -0.1 175 SWITCHING CHARACTERISTICS VDS - Drain to Source Voltage - V Ciss 0 1 2 3 4 5 6 7 0 8 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A -100 -10 VGS = −10 V −4.5 V -1 0V -0.1 Pulsed -0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 Page 9 of 10 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE μ PA2593 Chapter Title Package Drawings (Unit: mm) 8-pin VSOF (2429) 2.9±0.1 A 0.65 0.17±0.05 5 0 to 0.025 2.4±0.1 4 1 (0.3) 2.8±0.1 8 0.05 M S A 0.32±0.05 0.8±0.05 N-channel 1: Source 2: Gate 7, 8: Drain P-channel 3: Source 4: Gate 5, 6: Drain S Equivalent Circuit N-channel P-channel Drain Drain Body Diode Gate Gate Protection Diode Remark Source Body Diode Gate Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 Page 10 of 10 μ PA2593 Revision History Rev. Date Page 1.00 2.00 Jul 01, 2010 Sep 10,2010 − 5, 6 Description Summary First Eddition Issued Change of graphs All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) (Note 2) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan, R.O.C. Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0