SDP04N60 SDF04N60 S a mHop Microelectronics C orp. Ver 2.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 4A 2.0 @ VGS=10V Rugged and reliable. TO-220 and TO-220F Package. D SDF SERIES TO-220F SDP SERIES TO-220 ORDERING INFORMATION Ordering Code Package SDP04N60HZ G G D S G D S Marking Code SDP04N60 TO-220 S RoHS Status Halogen Free Delivery Mode Tube SDP04N60PZ TO-220 04N60 Tube Pb Free SDF04N60HZ TO-220F SDF04N60 Tube Halogen Free SDF04N60PZ TO-220F 04N60 Tube Pb Free ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed TC=25°C TC=100°C a a E AS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range SDP04N60 SDF04N60 600 ±30 ±30 4 4 2.8 12 c A 12 A mJ 88 29 W 44 14.7 W -55 to 175 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.7 62.5 Details are subject to change without notice. A 2.8 90 TC=25°C TC=100°C Units V V 5.1 62.5 °C °C/W °C/W Dec,24,2013 1 www.samhop.com.tw SDP04N60 SDF04N60 Ver 2.2 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage Drain-Source On-State Resistance RDS(ON) gFS Forward Transconductance Conditions Min VGS=0V , ID=250uA 600 Typ VGS= ±30V , VDS=0V 2 Units 1 ±100 uA nA 4 2.5 V ohm V VDS=480V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=2A Max 3 2.0 VDS=20V , ID=2A 2.5 S VDS=25V,VGS=0V f=1.0MHz 500 57 14 pF pF pF 20 ns 17 ns 24 ns 11 ns 11.5 nC 2 nC 5.3 nC b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VDS=300V,ID=1A,VGS=10V Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=300V,ID=1A, VGS=10V VDD=300V ID=1A VGS=10V RGEN= 6 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A 0.765 1.4 V Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12) Dec,24,2013 2 www.samhop.com.tw SDP04N60 SDF04N60 Ver 2.2 3.5 I D , Drain C urrent (A) ID , Drain C urrent(A) 6.0 VG S = 10V 4.8 3.6 VG S = 6V 2.4 VG S = 5V 1.2 1.4 8 6 4 2 10 0 12 1.2 2.4 3.6 4.8 7.2 6.0 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 3.0 R DS (ON) , On-R es is tance 6 5 4 3 V G S =10V 2 1 0 0.1 2.6 V G S =10V I D =2A 2.2 1.8 1.4 1.0 0 2.4 1.2 3.6 4.8 0 6.0 B V DS S , Normalized Drain-S ource B reakdown V oltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 -25 0 25 50 75 100 125 150 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 1.6 0.2 -50 50 T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 1.4 25 T j( C ) I D , Drain C urrent (A) V th, Normalized G ate-S ource T hres hold V oltage 25 C -55 C 0 0 Ω) T j=125 C 2.1 0.7 0 R DS (on) ( 2.8 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature Dec,24,2013 3 www.samhop.com.tw SDP04N60 SDF04N60 Ver 2.2 20.0 6 I D = 2A 4 Is , S ource-drain current (A) R DS (on) ( Ω ) 5 125 C 3 75 C 2 25 C 1 0 0 2 4 6 8 125 C 10.0 5.0 75 C 1.0 10 25 C 0 V G S , G ate- S ource Voltage (V ) 0.9 1.2 1.5 F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 10 V G S , G ate to S ource V oltage (V ) 1200 1000 C , C apacitance (pF ) 0.6 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage 800 600 C is s 400 C os s 200 V DS =300V I D = 1A 8 6 4 2 C rs s 0 0 10 20 40 30 0 50 0 V DS , Drain-to S ource Voltage (V ) 10 12 14 16 N) (O s 1 ms DC 0.01 us s 10 VGS=10V Single Pulse TC=25 C Lim it 10 0u 1m 0.1 10 S S 8 RD s RD s ms 10 C D 1 6 10 0u 1m (O N) Lim 10 4 F igure 10. G ate C harge I D , Drain C urrent (A) it 10 2 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance I D , Drain C urrent (A) 0.3 0.1 VGS=10V Single Pulse TC=25 C 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 V DS , Drain-S ource V oltage (V ) V DS , Drain-S ource V oltage (V ) Figure 11b. Maximum Safe Operating Area for SDF04N60 Figure 11a. Maximum Safe Operating Area for SDP04N60 Dec,24,2013 4 www.samhop.com.tw SDP04N60 SDF04N60 Ver 2.2 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V 0.0 1 tp IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 12a. F igure 12b. r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 t2 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 0.1 1 10 Square Wave Pulse Duration (msec) Figure 13a. Normalized Thermal Transient Impedance Curve for SDP04N60 r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.05 0.1 P DM 0.02 t1 0.01 t2 S ingle P uls e 0.01 0.00001 0.0001 1. 2. 3. 4. 0.001 0.01 0.1 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 1 10 S quare Wave P uls e Duration (ms ec) Figure 13b. Normalized Thermal Transient Impedance Curve for SDF04N60 Dec,24,2013 5 www.samhop.com.tw SDP04N60 SDF04N60 Ver 2.2 Dec,24,2013 6 www.samhop.com.tw SDP04N60 SDF04N60 Ver 2.2 TO-220F A1 E Q1 P A3 Q D1 D L2 L1 b1x3 L bx3 c e SYMBOL A A1 A2 A3 b b1 c D D1 E E1 e L L1 L2 Q Q1 P E1 A A2 MILLIMETERS MAX MIN 4.90 4.50 2.35 2.75 2.15 2.92 0.50 0.65 0.90 0.70 1.55 1.15 0.70 0.45 16.30 15.30 6.67 6.77 9.90 10.32 9.20 9.40 2.54 REF. 9.45 10.05 2.79 3.60 15.60 16.00 3.40 3.20 7.10 6.90 3.55 2.90 Dec,24,2013 7 www.samhop.com.tw SDP04N60 SDF04N60 Ver 2.2 TO-220 Tube Dec,24,2013 8 www.samhop.com.tw SDP04N60 SDF04N60 Ver 2.2 F Tube Dec,24,2013 9 www.samhop.com.tw SDP04N60 SDF04N60 Ver 2.2 TOP MARKING DEFINITION TO-220 (Halogen Free) SamHop Logo SDP04N60 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot Number TO-220 (Pb Free) Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SamHop Logo PB Free Product No. 04N60 XXXXX Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number Dec,24,2013 10 www.samhop.com.tw SDP04N60 SDF04N60 Ver 2.2 TOP MARKING DEFINITION TO-220F (Halogen Free) SamHop Logo SDF04N60 XXXXXX Product No. SMC internal code No. (A,B,C...Z) TO-220F (Pb Free) Wafer Lot Number Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SamHop Logo PB Free Product No. 04N60 XXXXX Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number Dec,24,2013 11 www.samhop.com.tw