SDU/D04N65

SDU/D04N65
Green
Product
SamHop Microelectronics corp.
Ver 2.3
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON).
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
650V
4A
2.5 @VGS=10V
Rugged and reliable.
Suface Mount Package.
D
G
G
D
S
SDU SERIES
TO-252(D-PAK)
G
D
S
SDD SERIES
TO-251S(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
S
SDD SERIES
TO-251L(I-PAK)
RoHS Status
Halogen Free
SDU04N65HZ
TO-252
Marking Code
SDU04N65
SDD04N65HS
TO-251S
SDD04N65
Tube
Halogen Free
SDD04N65HL
TO-251L
SDD04N65
Tube
Halogen Free
Delivery Mode
Reel
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
Limit
650
±30
TC=25°C
Units
V
V
4
A
2.8
A
11
A
100
mJ
83
W
42
W
-55 to 175
°C
Thermal Resistance, Junction-to-Case
1.8
°C/W
Thermal Resistance, Junction-to-Ambient
50
°C/W
-Pulsed
a e
TC=100°C
b
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
d
TC=25°C
TC=100°C
THERMAL CHARACTERISTICS
R JC
R JA
Details are subject to change without notice.
Jan,02,2014
1
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SDU/D04N65
Ver 2.3
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Min
VGS=0V , ID=250uA
650
Typ
V
uA
nA
3
4
V
2.5
3.2
3.3
ohm
S
490
54
pF
pF
12
pF
VGS= ±30V , VDS=0V
2
Units
1
±100
VDS=520V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=2A
VDS=20V , ID=2A
Max
c
Input Capacitance
Output Capacitance
tr
Conditions
VDS=25V,VGS=0V
f=1.0MHz
c
23
ns
17
ns
29
ns
12
ns
VDS=325V,ID=1A,VGS=10V
8.2
nC
VDS=325V,ID=1A,
VGS=10V
1.7
nC
3.8
nC
VDD=325V
ID=1A
VGS=10V
RGEN=6 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=2A
0.81
1.4
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
_ 300us, Duty Cycle <
_ 2%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure13)
e.Drain current limited by maximum junction temperature.
Jan,02,2014
2
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SDU/D04N65
Ver 2.3
3.0
5
ID, Drain Current(A)
4
ID, Drain Current(A)
VGS=7V
VGS=10V
VGS=6V
3
2
VGS=5V
1
2.4
Tj=125 C
1.8
-55 C
1.2
25 C
0.6
0
0
0
15
10
5
20
25
30
0
2.4
3.6
4.8
6.0
7.2
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
3.0
RDS(ON), On-Resistance
Normalized
6
5
RDS(on)( Ω )
1.2
4
VGS=10V
3
2
2.6
VGS=10V
ID=2A
2.2
1.8
1.4
1.0
1
0
0
0.1
1
2
3
4
0
5
50
25
75
100
125
150
Tj( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
VDS=VGS
ID=250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
BVDSS, Normalized
Drain-Source Breakdown Voltage
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Vth, Normalized
Gate-Source Threshold Voltage
ID, Drain Current (A)
100 125 150
Tj, Junction Temperature ( C)
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
Jan,02,2014
3
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SDU/D04N65
Ver 2.3
20.0
9.0
Is, Source-drain current (A)
ID=2A
RDS(on)( Ω )
7.5
6.0
125 C
4.5
75 C
3.0
25 C
1.5
125 C
10.0
5.0
75 C
1.0
0
0
2
4
6
8
0
10
VGS, Gate-Sorce Voltage(V)
0.3
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
1200
10
VGS, Gate to Source Voltage (V)
C, Capacitance (pF)
25 C
1000
800
600
Ciss
400
Coss
200
VDS=325V
ID=1A
8
6
4
2
Crss
0
0
0
10
20
40
30
50
0
3
6
12
9
VDS, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
300
1
1
10
ON
)
S(
RD
ID, Drain Current (A)
Switching Time(ns)
VDS=325V, ID=1A
VGS=10V
1
0.1
VGS=10V
Single Pulse
TA=25 C
0.01
0.1
100
s
10
0u
Tr
Tf
s
1m s
m
10 C
D
TD(off)
TD(on)
10
Lim
it
10
100
1
10
100
1000
VDS, Drain-Source Voltage (V)
Rg, Gate Resistance( Ω )
Figure 12. Maximum Safe
Operating Area
Figure 11. switching characteristics
Jan,02,2014
4
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SDU/D04N65
Ver 2.3
V(BR)DSS
tp
L
VDS
D.U.T
RG
+
- VDD
IAS
20V
tp
0.01
IAS
Unclamped Inductive Waveforms
Uncamped Inductive Test Circuit
Figure 13b.
Figure 13a.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1. R JA(t)=r(t)* R JA
2. R JA=See Datasheet
3. TJM-TA=PDM*R JA(t)
4. Duty Cycle,D=t1/t2
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Jan,02,2014
5
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SDU/D04N65
Ver 2.3
TO-252
E
E1
b3
L3
D1
D
H
3
2
1
L4
b
b2
e
A
SYMBOLS
c2
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
DETAIL "A"
c
L2
L
L1
A1
MILLIMETERS
MIN
MAX
2.380
2.200
0.000
0.127
0.635
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.380
5.210
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
1.270
0.890
0.640
1.010
10 °
0°
DETAIL "A"
Jan,02,2014
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www.samhop.com.tw
SDU/D04N65
Ver 2.3
PACKAGE OUTLINE DIMENSIONS
TO-251S
A
E
b3
c2
D1
E1
D
H
1
2
3
b2
L4
L5
L
b
e
b4
SYMBOL
c
MILLIMETERS
MIN
MAX
E
6.350
6.731
L
3.700
4.400
L4
0.698 REF
L5
0.972
1.226
D
5.970
9.670
6.223
11.450
0.630
0.850
0.760
4.950
1.140
0.450
0.550
H
b
b2
b3
b4
e
A
c
c2
D1
E1
5.460
2.286 BSC
2.390
2.180
0.400
0.610
0.400
0.610
5.100
4.318
Jan,02,2014
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SDU/D04N65
Ver 2.3
PACKAGE OUTLINE DIMENSIONS
TO-251L
A
E
A1
A2
C
B
D
b3
L1
b2
b4
L
e
SYMBOL
A
A1
A2
B
L1
L
D
C
C1
E1
E
b1
b2
b3
b4
e
C1
b1
MIN
6.40
5.30
4.30
1.35
7.40
5.40
0.55
0.49
1.72
2.20
0.60
0.70
E1
MILLIMETERS
NOM
6.50
5.40
4.40
1.50
1.55 REF
7.70
5.55
0.60
0.54
1.77
2.30
MAX
6.60
5.50
4.50
1.65
8.00
5.70
0.65
0.59
1.82
2.40
0.75
0.85
0.80
0.90
2.30
Jan,02,2014
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SDU/D04N65
Ver 2.3
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Jan,02,2014
9
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SDU/D04N65
Ver 2.3
TOP MARKING DEFINITION
TO-252
SamHop Logo
SDU04N65
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Jan,02,2014
10
www.samhop.com.tw
SDU/D04N65
Ver 2.3
TOP MARKING DEFINITION
TO-251S
SDD04N65
XXXXXX
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
TO-251L
SamHop Logo
SDD04N65
XXXXXX
Product No.
Production Year (2009 = 9, 2010 = A.....)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B.....)
Wafer Lot No.
SMC internal code No. (A,B,C...Z)
Jan,02,2014
11
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