SDU/D04N65 Green Product SamHop Microelectronics corp. Ver 2.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON). PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 650V 4A 2.5 @VGS=10V Rugged and reliable. Suface Mount Package. D G G D S SDU SERIES TO-252(D-PAK) G D S SDD SERIES TO-251S(I-PAK) ORDERING INFORMATION Ordering Code Package S SDD SERIES TO-251L(I-PAK) RoHS Status Halogen Free SDU04N65HZ TO-252 Marking Code SDU04N65 SDD04N65HS TO-251S SDD04N65 Tube Halogen Free SDD04N65HL TO-251L SDD04N65 Tube Halogen Free Delivery Mode Reel ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM Limit 650 ±30 TC=25°C Units V V 4 A 2.8 A 11 A 100 mJ 83 W 42 W -55 to 175 °C Thermal Resistance, Junction-to-Case 1.8 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W -Pulsed a e TC=100°C b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range d TC=25°C TC=100°C THERMAL CHARACTERISTICS R JC R JA Details are subject to change without notice. Jan,02,2014 1 www.samhop.com.tw SDU/D04N65 Ver 2.3 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance VGS(th) RDS(ON) gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time Rise Time tD(OFF) Turn-Off Delay Time tf Qg Fall Time Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Min VGS=0V , ID=250uA 650 Typ V uA nA 3 4 V 2.5 3.2 3.3 ohm S 490 54 pF pF 12 pF VGS= ±30V , VDS=0V 2 Units 1 ±100 VDS=520V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=2A VDS=20V , ID=2A Max c Input Capacitance Output Capacitance tr Conditions VDS=25V,VGS=0V f=1.0MHz c 23 ns 17 ns 29 ns 12 ns VDS=325V,ID=1A,VGS=10V 8.2 nC VDS=325V,ID=1A, VGS=10V 1.7 nC 3.8 nC VDD=325V ID=1A VGS=10V RGEN=6 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=2A 0.81 1.4 V Notes a.Surface Mounted on FR4 Board,t < 10sec. _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure13) e.Drain current limited by maximum junction temperature. Jan,02,2014 2 www.samhop.com.tw SDU/D04N65 Ver 2.3 3.0 5 ID, Drain Current(A) 4 ID, Drain Current(A) VGS=7V VGS=10V VGS=6V 3 2 VGS=5V 1 2.4 Tj=125 C 1.8 -55 C 1.2 25 C 0.6 0 0 0 15 10 5 20 25 30 0 2.4 3.6 4.8 6.0 7.2 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 3.0 RDS(ON), On-Resistance Normalized 6 5 RDS(on)( Ω ) 1.2 4 VGS=10V 3 2 2.6 VGS=10V ID=2A 2.2 1.8 1.4 1.0 1 0 0 0.1 1 2 3 4 0 5 50 25 75 100 125 150 Tj( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 VDS=VGS ID=250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 BVDSS, Normalized Drain-Source Breakdown Voltage Tj, Junction Temperature ( C) Figure 4. On-Resistance Variation with Drain Current and Temperature Vth, Normalized Gate-Source Threshold Voltage ID, Drain Current (A) 100 125 150 Tj, Junction Temperature ( C) 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature Jan,02,2014 3 www.samhop.com.tw SDU/D04N65 Ver 2.3 20.0 9.0 Is, Source-drain current (A) ID=2A RDS(on)( Ω ) 7.5 6.0 125 C 4.5 75 C 3.0 25 C 1.5 125 C 10.0 5.0 75 C 1.0 0 0 2 4 6 8 0 10 VGS, Gate-Sorce Voltage(V) 0.3 0.6 0.9 1.2 1.5 VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 1200 10 VGS, Gate to Source Voltage (V) C, Capacitance (pF) 25 C 1000 800 600 Ciss 400 Coss 200 VDS=325V ID=1A 8 6 4 2 Crss 0 0 0 10 20 40 30 50 0 3 6 12 9 VDS, Drain-to Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 300 1 1 10 ON ) S( RD ID, Drain Current (A) Switching Time(ns) VDS=325V, ID=1A VGS=10V 1 0.1 VGS=10V Single Pulse TA=25 C 0.01 0.1 100 s 10 0u Tr Tf s 1m s m 10 C D TD(off) TD(on) 10 Lim it 10 100 1 10 100 1000 VDS, Drain-Source Voltage (V) Rg, Gate Resistance( Ω ) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Jan,02,2014 4 www.samhop.com.tw SDU/D04N65 Ver 2.3 V(BR)DSS tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. R JA(t)=r(t)* R JA 2. R JA=See Datasheet 3. TJM-TA=PDM*R JA(t) 4. Duty Cycle,D=t1/t2 SINGLE PULSE 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jan,02,2014 5 www.samhop.com.tw SDU/D04N65 Ver 2.3 TO-252 E E1 b3 L3 D1 D H 3 2 1 L4 b b2 e A SYMBOLS c2 A A1 b b2 b3 c c2 D D1 e E E1 H L L1 L2 L3 L4 DETAIL "A" c L2 L L1 A1 MILLIMETERS MIN MAX 2.380 2.200 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.380 5.210 2.286 BSC 6.400 6.731 4.318 4.900 9.400 10.400 1.400 1.770 2.743 REF 0.508 BSC 1.270 0.890 0.640 1.010 10 ° 0° DETAIL "A" Jan,02,2014 6 www.samhop.com.tw SDU/D04N65 Ver 2.3 PACKAGE OUTLINE DIMENSIONS TO-251S A E b3 c2 D1 E1 D H 1 2 3 b2 L4 L5 L b e b4 SYMBOL c MILLIMETERS MIN MAX E 6.350 6.731 L 3.700 4.400 L4 0.698 REF L5 0.972 1.226 D 5.970 9.670 6.223 11.450 0.630 0.850 0.760 4.950 1.140 0.450 0.550 H b b2 b3 b4 e A c c2 D1 E1 5.460 2.286 BSC 2.390 2.180 0.400 0.610 0.400 0.610 5.100 4.318 Jan,02,2014 7 www.samhop.com.tw SDU/D04N65 Ver 2.3 PACKAGE OUTLINE DIMENSIONS TO-251L A E A1 A2 C B D b3 L1 b2 b4 L e SYMBOL A A1 A2 B L1 L D C C1 E1 E b1 b2 b3 b4 e C1 b1 MIN 6.40 5.30 4.30 1.35 7.40 5.40 0.55 0.49 1.72 2.20 0.60 0.70 E1 MILLIMETERS NOM 6.50 5.40 4.40 1.50 1.55 REF 7.70 5.55 0.60 0.54 1.77 2.30 MAX 6.60 5.50 4.50 1.65 8.00 5.70 0.65 0.59 1.82 2.40 0.75 0.85 0.80 0.90 2.30 Jan,02,2014 8 www.samhop.com.tw SDU/D04N65 Ver 2.3 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Jan,02,2014 9 www.samhop.com.tw SDU/D04N65 Ver 2.3 TOP MARKING DEFINITION TO-252 SamHop Logo SDU04N65 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Jan,02,2014 10 www.samhop.com.tw SDU/D04N65 Ver 2.3 TOP MARKING DEFINITION TO-251S SDD04N65 XXXXXX SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) TO-251L SamHop Logo SDD04N65 XXXXXX Product No. Production Year (2009 = 9, 2010 = A.....) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B.....) Wafer Lot No. SMC internal code No. (A,B,C...Z) Jan,02,2014 11 www.samhop.com.tw