STS8205

STS8205
Gre
r
Pro
S a mHop Microelectronics C orp.
Ver 4.0
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
27.5 @ VGS=4.5V
Suface Mount Package.
28.5 @ VGS=4.0V
20V
5A
ESD Protected.
30.0 @ VGS=3.7V
33.0 @ VGS=3.1V
38.0 @ VGS=2.5V
S1
D1/D2
S2
1
6
2
3
5
4
D2
D1
TSOT 26
Top View
G1
D1/D2
G2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
PD
TJ, TSTG
-Pulsed
TA=25°C
TA=70°C
a
b
Maximum Power Dissipation
a
Limit
20
±12
Units
V
V
5.0
A
4.0
A
20
A
TA=25°C
1.25
W
TA=70°C
0.8
W
-55 to 150
°C
100
°C/W
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Aug,01,2011
1
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STS8205
Ver 4.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Conditions
Min
VGS=0V , ID=250uA
20
Typ
Max
1
±10
VDS=16V , VGS=0V
VGS= ±12V , VDS=0V
0.9
0.5
20.0
23.0
Drain-Source On-State Resistance
VDS=VGS , ID=1mA
VGS=4.5V , ID=2.5A
VGS=4.0V , ID=2.5A
VGS=3.7V , ID=2.5A
21.0
22.0
24.0
25.0
23.0
25.0
27.0
31.0
Forward Transconductance
VGS=3.1V , ID=2.5A
VGS=2.5V , ID=2.5A
VDS=5V , ID=2.5A
15
Units
V
uA
uA
1.5
V
27.5 m ohm
28.5 m ohm
30.0 m ohm
33.0 m ohm
38.0 m ohm
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
VDS=10V,VGS=0V
f=1.0MHz
Gate-Source Charge
Qgd
Gate-Drain Charge
pF
pF
pF
16.5
ns
36
ns
18
ns
c
VDD=16V
ID=2.5A
VGS=4.5V
RGEN= 6 ohm
Total Gate Charge
Qgs
485
155
135
VDS=16V,ID=5A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=1A
39
ns
8.6
nC
1.5
nC
4.2
nC
0.78
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 1%.
_ 10us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Aug,01,2011
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STS8205
Ver 4.0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
2
Mounted on FR-4 board of
1 inch2 , 2oz
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ON
S(
t
imi
)L
10
10us
RD
100us
1
1ms
10ms
1s
0.1
VGS=4.5V
Single Pulse
TA=25 C
0.01
0.1
DC
1
10
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
Mounted on FR-4 board of
1 inch2 , 2oz
100
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Aug,01,2011
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STS8205
Ver 4.0
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
20
VGS = 4.5 V
4.0 V
3.7 V
ID - Drain Current - A
ID - Drain Current - A
16
3.1 V
12
2.5 V
8
10
25°C
125°C
1
75°C
0.1
4
TA = -25°C
0
0.01
0
0.2
0.4
0.6
0.8
0.5
0
1
ЮyfsЮ- Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
1.0
ID = 1.0mA
0.9
0.8
0.7
0.6
0.5
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
4.5 V
20
0
0.1
1
10
3
TA = -25°C
10
25°C
1
75°C
125°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
40
2.5
100
Tch - Channel Temperature - °C
60
2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0
1.5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
0.4
-50
1
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 2.5 A
30
20
10
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Aug,01,2011
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STS8205
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
Ciss, Coss, Crss - Capacitance - pF
ID = 2.5A
50
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
4.5 V
40
30
20
10
0
0
-50
50
100
1000
Ciss
Crss
100
10
0.1
150
1
Coss
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
VDD = 16.0 V
VGS = 4.5 V
RG = 6 Ω
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 4.0
100
tf
tr
td(on)
10
1
0.1
td(off)
4
10
16 V
2
1
0
1
VDD = 4.0 V
10 V
3
ID = 5 A
0
2
4
6
8
10
QG - Gate Charge -nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
100
10
1
0.1
VGS = 0 V
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
Aug,01,2011
5
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STS8205
Ver 4.0
PACKAGE OUTLINE DIMENSIONS
TSOT 26
D
6
5
4
1
2
3
E1
e
DETAIL "A"
A1
b
L
SYMBOLS
D
E
E1
e
e1
b
C
A
A1
L
L1
L1
DETAIL "A"
A
E
e1
MILLIMETERS
INCHES
MIN
MAX
2.692
3.099
2.591
3.000
1.397
1.803
0.950 REF.
1.900 REF.
0.300
0.500
0.080
0.200
0.000
0.100
0.700
0.800
0.600
0.300
0.600 REF.
MIN
MAX
0.106
0.122
0.118
0.102
0.055
0.071
0.037 REF.
0.075 REF.
0.020
0.012
0.008
0.003
0.000
0.004
0.028
0.032
0.012
0.024
0.023 REF.
0
O
6
O
0
O
6
O
Aug,01,2011
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STS8205
Ver 4.0
TSOT 26 Tape and Reel Data
TSOT 26 Carrier Tape
+0.10
О1.50 0.00
3.50 + 0.05
4.00 + 0.10
1.75 + 0.10
2.00 + 0.05
8.0 + 0.30
A
B
B
A
R0
4.00 + 0.10
3.3 + 0.1
.3
5
.3
5 M
ax
0.25 + 0.05
+0.10
О1.00 0.00
Bo 3.2 + 0.1
R0
R0
.3
M
ax
R0
.3
SECTION B-B
Ko 1.5 + 0.1
SECTION A-A
TSOT 26 Reel
О60 + 0.5
О178.0 + 0.5
1.50
10.6
2.2 + 0.5
9.0
+1.5
-0
О13.5 + 0.5
SCALE 2:1
SOT 26
Aug,01,2011
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