SP3903

SP3903
Green
Product
S a mHop Microelectronics C orp.
Ver 1.4
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
Rugged and reliable.
22 @ VGS=10V
30V
Suface Mount Package.
7.5A
32 @ VGS=4.5V
D1
D1
D2
D2
S1
G1
S2
G2
PIN1
PDFN 5x6
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
ID
IDM
EAS
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA=25°C
TA=70°C
TC=25°C
TC=100°C
Drain Current-Continuous
-Pulsed
7.5
a
6
e
21.5
13.6 e
31
Units
V
V
A
A
A
A
A
49
a
2.5
a
1.6
20.8
8.3
mJ
W
W
W
W
Limit
30
±20
b
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
d
TA=25°C
TA=70°C
TC=25°C
TC=100°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
a
-55 to 150
°C
6
50
°C/W
°C/W
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SP3903
Ver 1.4
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
VGS=0V , ID=250uA
VDS=24V , VGS=0V
Drain-Source On-State Resistance
gFS
Forward Transconductance
Typ
VGS=10V , ID=3.75A
VGS=4.5V , ID=3.1A
VDS=5V , ID=3.75A
Max
1.4
Units
V
30
uA
1
±100
nA
1.7
16
2.3
22
m ohm
23
13
32
m ohm
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA
RDS(ON)
Min
V
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=15V,VGS=0V
f=1.0MHz
360
90
70
pF
pF
pF
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
10
12.6
17
8.3
ns
ns
ns
ns
7
nC
4
nC
1
2.3
nC
nC
c
VDS=15V,ID=3.75A,VGS=10V
VDS=15V,ID=3.75A,VGS=4.5V
VDS=15V,ID=3.75A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
VGS=0V,IS=2A
Diode Forward Voltage
0.8
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
e.Drain current limited by maximum junction temperature.
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SP3903
Ver 1.4
30
12.0
ID, Drain Current(A)
VGS=5V
24
VGS=4.5V
18
VGS=3.5V
12
VGS=3V
6
0
RDS(on)(m Ω)
VGS=4V
0
1.0
0.5
2.0
1.5
2.5
9.6
7.2
Tj=125 C
4.8
0
2.4
3.2
4.0
4.8
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.6
50
1.5
40
30
V G S =4.5V
20
V G S =10V
10
1
6
1
12
18
V G S =10V
I D =3.75A
1.4
1.3
1.2
V G S =4.5V
I D =3.1A
1.1
1.0
24
0
30
0
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25
50
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.6
0.8
VDS, Drain-to-Source Voltage(V)
60
0.2
-55 C
25 C
2.4
0
3.0
R DS(on), On-Resistance
Normalized
ID, Drain Current(A)
VGS=10V
75 100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
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SP3903
Ver 1.4
20
60
Is, Source-drain current(A)
I D =3.75A
50
RDS(on)(m Ω)
40
30
125 C
20
10
0
25 C
75 C
4
6
8
75 C
10
0
0.25
0.50
0.75
1.00
1.25
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
10
500
C, Capacitance(pF)
25 C
125 C
1
2
0
600
400
Ciss
300
200
Coss
100
Crss
0
10
0
5
10
15
20
25
VDS=50V
ID=3.75A
8
6
4
2
0
30
0
1.5
3.0
4.5
6.0
7.5
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
9.0
I D, Drain Current(A)
Switching Time(ns)
100
TD(off )
Tr
TD(on)
10
Tf
VDS=15V,ID=1A
VGS=10V
10
R
(O
DS
N)
Lim
it
10
1m
10
s
10
ms
0m
s
DC
1
0.1
0u
s
VGS=10V
Single Pulse
TA=25 C
1
1
6
10
60 100
0.1
1
10
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
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SP3903
Ver 1.4
V(BR)DSS
tp
L
VDS
D.U.T
RG
+
- VDD
IAS
20V
tp
0.01
IAS
Unclamped Inductive Waveforms
Uncamped Inductive Test Circuit
Figure 13b.
Figure 13a.
1
Normalized Transient
Thermal Resistance
0.5
0.2
0.1
0.1
0.05
0.02
P DM
0.01
0.01
t1
Single Pulse
1.
2.
3.
4.
t2
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
0.001
0.00001
0.0001
0.001
0.1
0.01
1
Square Wave Pulse Duration(sec)
100
10
1000
Figure 14. Normalized Thermal Transient Impedance Curve
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SP3903
Ver 1.4
PACKAGE OUTLINE DIMENSIONS
PDFN 5x6-8L
E1
E
E2
D
D1
e
D2
b
L2
L
L1
BOTTOM VIEW
TOP VIEW
A
A1
c
SIDE VIEW
SYMBOLS
A
A1
b
c
D
D1
D2
E
E1
E2
e
L
L1
L2
0
MIN
0.80
0.00
0.30
0.15
0.50
0.45
0.00
MILLIMETERS
NOM
0.90
0.40
0.20
5.20 BSC
4.35 BSC
0.60
5.55 BSC
6.05 BSC
3.82 BSC
1.27 BSC
0.55
MAX
1.00
0.05
0.50
0.25
0.75
0.65
0.15
0.68 REF
0o
10o
Jul,18,2013
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SP3903
Ver 1.4
TOP MARKING DEFINITION
PDFN 5x6-8L
SamHop Logo
3903
Product No.
XXXXXX
Pin 1
Y: Cu wire + Halogen Free. RoHS Compliant.
G: Halogen Free. RoHS Compliant.
Lot Number
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B.....)
Production Year (2009 = 9, 2010 = A.....)
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