STP652F

STP652F
Gre
r
Pro
S a mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Typ
60V
29A
22 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F package.
D
G
G D S
STF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
EAS
-Pulsed
Avalanche Energy
T C =25 °C
T C =70 °C
a
b
d
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TC=25°C
TC=70°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Limit
Units
60
±20
V
V
29
A
24
90
A
A
110
mJ
46
W
32
W
-55 to 175
°C
3.25
62.5
°C/W
°C/W
Oct,27,2010
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STP652F
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
Drain-Source On-State Resistance
gFS
Forward Transconductance
CHARACTERISTICS C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On DelayTime
tr
Rise Time
tD(OFF)
Turn-Off DelayTime
tf
Fall Time
Min
VGS=0V , ID=250uA
60
Typ
Max
Units
1
±100
uA
V
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
nA
2.2
3
VGS=10V , ID=14.5A
22
28
V
m ohm
VGS=4.5V , ID=11A
29
39
m ohm
VDS=10V , ID=14.5A
33
S
1800
133
102
pF
pF
pF
35.5
30
61
VDS=VGS , ID=250uA
RDS(ON)
DYNAMIC
CISS
COSS
CRSS
Conditions
VDS=30V,VGS=0V
f=1.0MHz
1.7
C
VDD=30V
ID=1A
VGS=10V
RGEN=6 ohm
Qg
Total Gate Charge
VDS=30V,ID=14.5A,VGS=10V
VDS=30V,ID=14.5A,VGS=4.5V
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=30V,ID=14.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
VGS=0V,IS=5A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS=50A,
dIF / dt = 100A/us
12.5
28
14
ns
ns
ns
ns
nC
nC
3.5
7
nC
nC
0.79
1.3
49
V
ns
54
nC
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
Oct,27,2010
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STP652F
Ver 1.1
30
35
VG S = 4.5V
28
ID, Drain Current(A)
ID, Drain Current(A)
VG S =10V
21
VG S = 4V
14
7
VG S = 3.5V
0
2.0
1.5
1.0
0.5
2.5
12
25 C
-55 C
6
0
3.0
1.8
2.7
3.6
5.4
4.5
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
60
2.0
50
1.8
40
V G S =4.5V
30
20
V G S =10V
10
1
0.9
V DS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
T j=125 C
18
0
0
7
1
14
21
28
V G S =10V
I D =14.5A
1.6
1.4
V G S =4.5V
I D =11A
1.2
1.0
0
35
0
25
50
75
100
125
150
T j ( °C )
I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
24
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,27,2010
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STP652F
Ver 1.1
60
60
Is, Source-drain current(A)
I D =14.5A
RDS(on)(m Ω)
50
40
125 C
30
75 C
20
25 C
10
0
0
2
4
6
8
10
75 C
0
0.25
0.50
0.75
1.00
1.25
V GS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
C is s
2000
C, Capacitance(pF)
25 C
1
10
2400
1600
1200
800
C os s
400
C rs s
0
0
5
10
15
20
25
V DS =30V
I D =14.5A
8
6
4
2
0
0
30
4
8
12
16 20
24
28 32
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
400
300
TD(off )
100
I D, Drain Current(A)
100
Tr
Switching Time(ns)
125 C
TD(on)
Tf
10
VDS=30V,ID=1A
VGS=10V
10
1
RD
S
(
ON
im
)L
10
it
10
1m
10
DC
0u
us
s
s
ms
V G S =10V
S ingle P ulse
T A =25 C
1
1
10
0.1
100
Rg, Gate Resistance(Ω)
1
10
60
V DS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Oct,27,2010
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STP652F
Ver 1.1
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.05
0.1
P DM
0.02
t1
0.01
t2
S ingle P uls e
0.01
0.00001
0.0001
1.
2.
3.
4.
0.001
0.01
0.1
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
1
10
S quare Wave P uls e Duration (ms ec)
F igure 14. Normalized T hermal T rans ient Impedance C urve
Oct,27,2010
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STP652F
Ver 1.1
#
'
F
.
%
.
.
O
I
H
#
.
D
D
E
G
J
A
A1
b
b1
c
c2
E
L1
L2
L4
L5
O
e
f
g
h
4.80
2.85
1.05
1.50
0.80
3.10
10.30
3.80
7.50
16.40
14.50
3.20
2.55
1.30
1.90
3.40
3.80
2.70
2.10
4.20
1.95
0.56
0.90
0.55
2.50
9.70
3.20
6.90
15.60
13.50
Oct,27,2010
6
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STP652F
Ver 1.1
F Tube
Oct,27,2010
7
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