STM8601 S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) V DSS ID 60V 4.5A PRODUCT SUMMARY (P-Channel) R DS(ON) (m Ω) Max V DSS ID -60V -3.3A R DS(ON) (m Ω) Max 105 @ VGS=-10V 58 @ VGS=10V 75 @ VGS=4.5V 150 @ VGS=-4.5V S O-8 1 D2 5 4 G2 D2 6 3 S2 D1 7 2 G1 D1 8 1 S1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous TA=25°C TA=70°C IDM E AS PD TJ, TSTG P-Channel Units 60 -60 V ±20 ±20 V 4.5 -3.3 A 3.6 -2.6 A 16 12 15 20 A mJ N-Channel -Pulsed a b Single Pulse Avalanche Energy Maximum Power Dissipation a d TA=25°C 2.0 W TA=70°C 1.28 W -55 to 150 °C 62.5 °C/W Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Nov,06,2008 1 www.samhop.com.tw STM8601 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min 60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=48V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V V 1 uA ±100 nA 1.9 3 V ON CHARACTERISTICS VDS=VGS , ID=250uA VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) tr Rise Time Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge VGS=10V , ID=4.5A 48 58 m ohm VGS=4.5V , ID=4A 55 75 m ohm VDS=5V , ID=4.5A 12 S 852 pF 72 pF 45 pF 12 11 ns ns 37.5 8 ns ns 14 6.7 1.75 2.9 nC nC c COSS tD(OFF) 1 VDS=30V,VGS=0V f=1.0MHz c VDD=30V ID=1A VGS=10V RGEN=3.3 ohm VDS=30V,ID=4.5A,VGS=10V VDS=30V,ID=4.5A,VGS=4.5V VDS=30V,ID=4.5A, VGS=10V Gate-Drain Charge nC nC DRAIN-SOURCE DIODE CHARACTERISTICS IS VSD Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage b VGS=0V,IS=2A 0.8 2 A 1.2 V Nov,06,2008 2 www.samhop.com.tw STM8601 Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=-250uA -60 Typ -1 ±100 VGS= ±20V , VDS=0V VGS=-4.5V , ID=-2.8A -1.0 Units V VDS=-48V , VGS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-3.3A Max uA nA -1.8 -3.0 85 105 V m ohm 110 150 m ohm VDS=-5V , ID=-3.3A 7 S VDS=-30V,VGS=0V f=1.0MHz 730 68 43 pF pF pF 12.4 10.5 ns ns ns ns c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge c VDD=-30V ID=-1A VGS=-10V RGEN=3.3 ohm 65 23 VDS=-30V,ID=-3.3A,VGS=-10V 14 nC VDS=-30V,ID=-3.3A,VGS=-4.5V 6.7 1.5 3.3 nC VDS=-30V,ID=-3.3A, VGS=-30V DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-2A -0.81 nC nC -2 A -1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,V DD =20V,V GS=10V.(See Figure13) Nov,06,2008 3 www.samhop.com.tw STM8601 Ver 1.0 N-Channel 15 30 V G S = 4.5V 24 I D, Drain Current(A) I D, Drain Current(A) V G S = 10V V G S = 4V 18 V G S =3.5V 12 V G S = 3V 6 0 2.0 1.5 1.0 0.5 2.5 9 6 125 C 0 0 3.0 V DS, Drain-to-Source Voltage(V) 1.6 2.4 3.2 4.0 4.8 Figure 2. Transfer Characteristics 90 2.0 R DS(on), On-Resistance Normalized 75 RDS(on)(m Ω) 0.8 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics VG S =4.5V 60 45 VG S =10V 30 15 0 6 0 12 18 24 1.8 1.6 V G S =10V I D = 4.5A 1.4 1.2 V G S =4.5V I D =4A 1.0 0 30 0 Figure 3. On-Resistance vs. Drain Current and Gate Voltage BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.0 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.4 1.2 25 Tj, Junction Temperature(° C ) ID, Drain Current(A) Vth, Normalized Gate-Source Threshold Voltage -55 C 3 25 C V G S = 2.5V 0 12 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,06,2008 4 www.samhop.com.tw STM8601 Ver 1.0 120 20.0 Is, Source-drain current(A) I D =4.5A 100 R DS(on)(m Ω) 125 C 80 75 C 60 25 C 40 20 0 0 2 4 6 8 10 25 C 125 C 75 C 0 0.3 0.6 0.9 1.2 1.5 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) 10 1000 C is s 800 600 400 200 Cos s C rs s 0 0 10 5 15 20 25 V DS = 30V I D =4.5A 8 6 4 2 0 0 30 4 8 6 10 12 14 16 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 300 50 100 10 TD(off ) TD(on) Tr 10 Tf VDS=30V,ID=1A RD 0.1 0.02 0.1 1 10 100 S ( ) ON L im it 10 10 1 VGS=10V 1 2 V DS, Drain-to-Source Voltage(V) I D, Drain Current(A) C, Capacitance(pF) 5 1.0 1200 Switching Time(ns) 10. 0 DC 10 0m 1m 0u s s ms s VGS=10V Single Pulse TA=25 C 1 10 60 300 Rg, Gate Resistance(Ω) VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,06,2008 5 www.samhop.com.tw STM8601 Ver 1.0 V ( BR )D S S 15V tp L VDS D R IVE R D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Normalized Transient Thermal Resistance 10 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 100 1000 Nov,06,2008 6 www.samhop.com.tw STM8601 Ver 1.0 P-Channel 15 10 V G S = -10V -ID, Drain Current(A) -I D, Drain Current(A) V G S = -4.5V V G S = -3.5V 8 6 V G S = -4V 4 V G S = -3V 2 12 9 6 25 C 3 125 C 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 -V DS, Drain-to-Source Voltage(V) 200 1.8 R DS(on), On-Resistance Normalized R DS(on)(m Ω) 2.0 160 VG S =-4.5V 80 VG S =-10V 40 1 2 6 4 8 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.0 0.8 0.6 0.4 25 50 5.2 V G S =-4.5V I D = -2.8A 1.2 1.0 0 25 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature V DS =V G S I D =-250uA 0 4.5 Tj, Junction Temperature(° C ) 1.6 -25 3.6 1.4 0 10 Figure 3. On-Resistance vs. Drain Current and Gate Voltage 0.2 -50 2.7 V G S =-10V I D =-3.3A 1.6 -ID, Drain Current(A) 1.4 1.8 Figure 2. Transfer Characteristics 240 120 0.9 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 -55 C 0 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,06,2008 7 www.samhop.com.tw STM8601 Ver 1.0 300 20 -Is, Source-drain current(A) I D =-3.3A R DS(on)(m Ω) 250 200 125 C 150 100 75 C 25 C 50 0 0 2 4 6 8 75 C 0 0.3 0.6 0.9 1.2 1.5 -VGS, Gate-to-Source Voltage(V) -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) C is s 800 600 400 Cos s 200 C rs s 0 15 10 5 20 25 6 4 2 0 30 V DS = -30V I D =-3.3A 8 0 2 -V DS, Drain-to-Source Voltage(V) 6 4 8 10 12 14 16 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 50 300 100 -ID, Drain Current(A) TD(off ) Switching Time(ns) 25 C 1 1000 C, Capacitance(pF) 125 C 10 1200 0 10 Tr Tf TD(on) 10 VDS=30V,ID=1A 10 R 1 6 10 0.1 0.02 0.1 60 100 Rg, Gate Resistance(Ω) ( L im it 10 1m 0u s 10 s 1 0 ms 0m s DC 1 VGS=10V 1 DS ) ON VGS=10V Single Pulse TA=25 C 1 10 60 300 -VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Nov,06,2008 8 www.samhop.com.tw STM8601 Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Normalized Transient Thermal Resistance 10 0.5 1 0.2 0.1 P DM 0.05 0.1 t1 t2 0.02 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Nov,06,2008 9 www.samhop.com.tw STM8601 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± B A1 e 0.008 TYP. 0.016 TYP. 0.05 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± Nov,06,2008 10 www.samhop.com.tw STM8601 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE A0 SOP 8N 150п 6.50 ²0.15 B0 K0 D0 D1 E 5.25 ²0.10 2.10 ²0.10 ӿ1.5 (MIN) ӿ1.55 ²0.10 12.0 +0.3 - 0.1 E1 1.75 ²0.10 E2 P0 P1 P2 T 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 SO-8 Reel W1 S K V M N G R H W UNIT:р TAPE SIZE 12 р REEL SIZE M N W W1 H ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 K S G R V 2.0 ²0.15 Nov,06,2008 11 www.samhop.com.tw