SDF04N06

SDF04N06
Green
Product
S a mHop Microelectronics C orp.
Ver 1.2
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
600V
4A
R DS(ON) ( Ω) Max
Rugged and reliable.
2.5 @ VGS=10V
TO-220F Package.
D
G
G D S
STF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
EAS
-Pulsed
Avalanche Energy
T C =25 °C
T C =70 °C
a
b
d
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TC=25°C
TC=70°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Limit
600
±30
Units
4
A
2.2
16
A
A
90
mJ
V
V
21
W
13.3
W
-55 to 150
°C
6
65
°C/W
°C/W
Apr,20,2010
1
www.samhop.com.tw
SDF04N06
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Min
VGS=0V , ID=250uA
600
Typ
VGS= ±20V , VDS=0V
Drain-Source On-State Resistance
Forward Transconductance
VDS=10V , ID=1.8A
2
Max
Units
1
±100
uA
V
VDS=480V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=1.8A
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
Conditions
3
2
2.5
4
2.5
nA
V
ohm
S
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VDS=25V,VGS=0V
f=1.0MHz
650
67
11
pF
pF
pF
26.5
ns
15.5
ns
28
ns
13
ns
c
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VDS=300V,ID=1A,VGS=10V
12.5
nC
Qgs
Gate-Source Charge
2.6
nC
Qgd
Gate-Drain Charge
VDS=300V,ID=1A,
VGS=10V
5
nC
VDD=300V
ID=1A
VGS=10V
RGEN=6 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.765
1
A
1.4
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=5mH,VDD = 50V.(See Figure13)
Apr,20,2010
2
www.samhop.com.tw
SDF04N06
Ver 1.2
3.5
I D , Drain C urrent (A)
ID , Drain C urrent(A)
6.0
VG S = 10V
4.8
3.6
VG S = 6V
2.4
VG S = 5V
1.2
1.4
8
6
4
2
0
12
10
1.2
2.4
3.6
4.8
7.2
6.0
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
F igure 2. Trans fer C haracteris tics
3.0
R DS (ON) , On-R es is tance
6
5
4
3
V G S =10V
2
1
0
0.1
1.2
2.4
3.6
4.8
2.6
1.8
1.4
1.0
0
6.0
V G S =10V
I D =1.8A
2.2
0
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
-25
0
25
50
75
100
125
150
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
1.6
0.2
-50
50
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
1.4
25
T j( C )
I D , Drain C urrent (A)
V th, Normalized
G ate-S ource T hres hold V oltage
25 C
-55 C
0
0
Ω)
T j=125 C
2.1
0.7
0
R DS (on) (
2.8
75 100 125 150
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
Apr,20,2010
3
www.samhop.com.tw
SDF04N06
Ver 1.2
20.0
6
I D = 1.8A
4
Is , S ource-drain current (A)
R DS (on) ( Ω )
5
125 C
3
75 C
2
25 C
1
0
0
2
4
6
8
125 C
10.0
5.0
75 C
1.0
10
25 C
0
V G S , G ate- S ource Voltage (V )
0.9
1.2
1.5
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
1200
V G S , G ate to S ource V oltage (V )
10
1000
C , C apacitance (pF )
0.6
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
800
C is s
600
400
200
C os s
C rs s
0
0
V DS =300V
I D = 1A
8
6
4
2
0
10
20
40
30
50
0
V DS , Drain-to S ource Voltage (V )
100
10
I D , Drain C urrent (A)
100
TD(on)
Tr
Tf
10
VDS=300V,ID=1A
VGS=10V
10
1
RD
8
6
10
12
14 16
100
R g, G ate R es is tance ( Ω )
S
(O
L
N)
im
10
0u
1m s
10 s
m
DC s
it
0.1
0.01
0.001
0.1
1
1
4
F igure 10. G ate C harge
300
TD(off )
2
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
S witching T ime (ns )
0.3
VGS=10V
Single Pulse
TA=25 C
1
10
100
1000
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
F igure 11.s witching characteris tics
Apr,20,2010
4
www.samhop.com.tw
SDF04N06
Ver 1.2
V ( BR )D S S
15V
tp
D R IVE R
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.05
0.1
P DM
0.02
t1
0.01
t2
S ingle P uls e
0.01
0.00001
0.0001
1.
2.
3.
4.
0.001
0.01
0.1
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
1
10
S quare Wave P uls e Duration (ms ec)
F igure 14. Normalized T hermal T rans ient Impedance C urve
Apr,20,2010
5
www.samhop.com.tw
SDF04N06
Ver 1.2
#
'
F
.
%
.
.
O
H
I
#
.
D
D
E
G
J
A
A1
b
b1
c
c2
E
L1
L2
L4
L5
O
e
f
g
h
4.80
2.85
1.05
1.50
0.80
3.10
10.30
3.80
7.50
16.40
14.50
3.20
2.55
1.30
1.90
3.40
3.80
2.70
2.10
4.20
1.95
0.56
0.90
0.55
2.50
9.70
3.20
6.90
15.60
13.50
Apr,20,2010
6
www.samhop.com.tw
SDF04N06
Ver 1.2
F Tube
Apr,20,2010
7
www.samhop.com.tw