S T U/D426S S amHop Microelectronics C orp. Oct,2007 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS (ON) ( m Ω ) T yp ID S uper high dense cell design for low R DS (ON ). R ugged and reliable. 8 @ V G S = 10V 40V 53A TO-252 and TO-251 P ackage. 10 @ V G S = 4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) S G S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) S ymbol Limit Unit V DS 40 V GS 20 V V ID 53 A -Pulsed Drain-S ource Diode Forward Current IDM IS 100 20 A A c I AS E AS 20 A 100 mJ PD 50 W T J , T S TG -55 to 175 C Parameter Drain-S ource Voltage Gate-S ource Voltage Drain Current-Continuous @ Ta= 25 C a Avalanche Current Avalanche Energy c Maximum P ower Dissipation @ Ta= 25 C Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W 1 S T U/D426S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol Condition Drain-S ource Breakdown Voltage Drain-S ource Breakdown Voltage d Zero Gate Voltage Drain Current BV DS S BV DS S IDS S V GS = 0V, ID = 250uA V GS = 0V, ID = 10mA V DS = 32V, V GS = 0V Gate-Body Leakage IGS S V GS = 20V, V DS = 0V Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) Min Typ C Max Unit OFF CHAR ACTE R IS TICS 40 V 45 V uA 1 100 nA ON CHAR ACTE R IS TICS a On-S tate Drain Current Forward Transconductance 1.6 3 V V GS =10V, ID = 10A 8 10 m ohm V GS =4.5V, ID= 5A 10 12 m ohm V DS = 10V, V GS = 10V ID(ON) gFS 1 30 A 26 S 1600 PF 280 PF 150 PF 0.3 ohm 20 ns 21 ns 45 ns 16 ns V DS =15V, ID =10A,V GS =10V 32 nC V DS =15V, ID =10A,V GS =4.5V 15 nC 3.5 nC nC V DS = 10V, ID = 10A DYNAMIC CHAR ACTE R IS TICS b Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg V DS =15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z S WITCHING CHAR ACTE R IS TICS b Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm tf Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =15V, ID = 10A V GS =10V 2 7.3 S T U/D426S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 0.95 V GS = 0V, Is = 20A VSD 1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. c. Start ing TJ=25 C , L = 0.5 mH , RG = 25 Ω , I AS = 20 A, VDD < -V(BR)DSS ( See Figure15 ) < d. Pulse Test:Pulse Width < - 1us, Duty Cycle - 1%. 60 20 V G S =4V T j =125 C VG S=4.5 V 40 I D , Drain C urrent (A) ID , Drain C urrent(A) 50 VG S =10V 30 20 V G S =3V 10 V G S =2.5V 0 15 -55 C 10 25 C 5 0 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 2.4 3.2 4.0 4.8 F igure 2. Trans fer C haracteris tics 2.0 12 R DS (ON) , On-R es is tance Normalized 15 R DS (on) (m Ω ) 1.6 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics V G S =4.5V 9 V G S =10V 6 3 1 0.8 1.8 1.6 12 24 36 48 60 V G S =4.5V I D =5A 1.2 1.0 0 1 V G S =10V I D =10A 1.4 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 30 20.0 I D =9A Is , S ource-drain current (A) 25 R DS (on) (m Ω ) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D426S 20 75 C 15 125 C 10 25 C 5 0 10.0 5.0 75 C 125 C 25 C 1.0 0 2 4 6 8 10 0 V G S , G ate- S ource Voltage (V ) 0.24 0.48 0.72 0.96 1.2 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D426S V G S , G ate to S ource V oltage (V ) 2400 C is s 1600 1200 800 C os s 400 C rs s 0 0 V DS =15V I D =10A 8 6 4 2 0 5 10 15 20 25 30 0 5 10 V DS , Drain-to S ource Voltage (V ) 15 20 25 30 35 40 Qg, T otal G ate C harge (nC ) F igure 10. G ate C harge F igure 9. C apacitance 600 10 V DS =15V ,ID=1A 1 V G S =10V 1 6 10 L im 10 R g, G ate R es is tance (Ω ) 10 10 DC 1 0.5 0.1 60 100 300 600 1m it 100 N) Tf (O T D(on) S Tr I D , Drain C urrent (A) T D(off) 100 60 RD 220 S witching T ime (ns ) 6 C , C apacitance (pF ) 2000 10 0m s ms s 1s V G S =10V S ingle P ulse T c=25 C 1 10 30 60 V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 5 F igure 12. Maximum S afe O perating Area S T U/D426S V DD ton V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL 10% INVE R TE D 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 14. S witching Waveforms F igure 13. S witching T es t C ircuit V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V 0.0 1 tp IAS Unclamped Inductive Waveforms Unclamped Inductive Test Circuit F igure 15b. F igure 15a. r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 16. Normalized T hermal T rans ient Impedance C urve 6 10 6 S T U/D426S TO-251 A E E2 C L D1 E1 1 H 2 B2 D D2 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC 7 INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC S T U/D426S TO-252 E A b2 C L3 1 D1 D E1 H 2 1 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. 8 MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. S T U/D426S TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT:р PACKAGE TO-252 (16 р* A0 6.80 ²0.1 B0 K0 10.3 ²0.1 2.50 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 0.3² 1.75 0.1² 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel S UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 9 G R V