STU/D6025NL Green Product Feb 25,2006 Ver1.2 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Super high dense cell design for low RDS(ON). Typ Rugged and reliable. 5.5 @ VGS = 10V 30V TO-252 and TO-251 Package. 60A 8 @ VGS = 4.5V D D G D G S STU SERIES TO-252AA(D-PAK) S G STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Symbol Parameter Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V ID 60 A IDM 100 A IS 20 A PD 50 W Drain Current-Continuous @TJ=25 C a -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Operating and Storage Temperature Range TJ, TSTG -55 to 175 C Thermal Resistance, Junction-to-Case R JC 3 C /W Thermal Resistance, Junction-to-Ambient R JA 50 C /W THERMAL CHARACTERISTICS 1 S T U/D6025NL E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) OFF CHAR ACTE R IS TICS 30 V uA ON CHAR ACTE R IS TICS b Forward Transconductance 3 V V GS =10V, ID =14A 5.5 7 m ohm V GS =4.5V, ID= 10A 8 10 m ohm V DS = 10V, V GS = 10V ID(ON) gFS On-S tate Drain Current 1.6 1 85 A 24.5 S 3270 PF 590 PF 420 PF 37.3 ns 65.6 ns 94.7 ns 44.5 ns V DS =15V, ID =14A,V GS =10V 59.6 nC V DS =15V, ID =14A,V GS =4.5V 28.3 nC V DS =15V, ID =14A V GS =10V 8.5 nC 12.6 nC V DS = 10V, ID = 14A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =15V, V GS = 0V f =1.0MH Z c tD(ON) V DD = 15V ID = 1A V GS = 10V R GE N = 6 ohm tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 2 S T U/D6025NL E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 0.86 V GS = 0V, Is = 20A VSD 1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 50 20 V G S =4V V G S =8V V G S =10V V G S =4.5V V G S =3.5V 30 20 V G S =3V 10 0 15 I D , Drain C urrent (A) ID , Drain C urrent(A) 40 10 25 C 5 T j=125 C 0 0 0.5 1 1.5 2 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 1.4 2.1 2.8 4.2 3.5 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 5400 R DS (ON) , On-R es is tance Normalized 1.8 4500 C , C apacitance (pF ) 0.7 C is s 3600 2700 1800 C os s 900 1.6 V G S =10V I D =14A 1.4 1.2 1.0 0.8 C rs s 0 0 5 10 15 20 25 0.6 -55 30 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 100 125 150 75 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 24 Is , S ource-drain current (A) 20 16 12 8 4 10.0 1.0 0 0 5 10 15 0.2 20 0.4 0.6 0.8 1.0 1.2 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 400 10 V DS =15V I D =14A 8 I D , Drain C urrent (A) gF S , T rans conductance (S ) V DS =10V V G S , G ate to S ource V oltage (V ) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D6025NL 6 4 2 0 100 R 9 18 27 36 45 54 Qg, T otal G ate C harge (nC ) N) L im it 10 10 0m ms s 1s DC V G S =10V S ingle P ulse T A =25 C 1 0.1 63 72 (O 10 1 0.1 0 DS 1 10 60 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T U/D6025NL V DD ton V IN D td(off) tf 90% 90% V OUT V OUT VG S R GE N toff tr td(on) RL 10% INVE R TE D 10% 6 G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit Thermal Resistance Normalized Transient 10 1 0.5 0.2 P DM 0.1 0.1 0.05 t1 t2 0.02 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T U/D6025NL TO-252 E A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. 6 MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. S T U/D6025NL TO-252 Tape and Reel Data TO-252 Carrier Tape UNIT:р PACKAGE TO-252 (16 р* A0 6.80 ²0.1 B0 K0 10.3 ²0.1 2.50 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 0.3² 1.75 0.1² 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel S UNIT:р TAPE SIZE 16 р REEL SIZE M N W T H K S ӿ 330 ӿ330 ² 0.5 ӿ97 ² 1.0 17.0 + 1.5 - 0 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 7 G R V