Data Sheet Super Fast Recovery Diode RFN10NS4S zSerise Standard Fast Recovery zDimensions(Unit : mm) zApplications General rectification zLand Size Figure(Unit : mm) 㻾㻲㻺㻝㻜㻌 㻺㻿㻠㻿 䐟㻌 zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S ձ Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty䍺0.5 430 V Reverse voltage VR 430 V Average rectified foward current Io IFSM Forward current surge peak Direct voltage 60Hz half sin wave , Resistive load Tc=75°C 10 A (*1) 80 A 60Hz half sin wave , Non-repetitive at Tj=25°C Junction temperature Tj 150 °C Storage temperature Tstg 55 to 150 °C (*1) 1-3pin common circuit zElectrical Characteristics(Tj=25°C) Symbol Conditions Min. Typ. Max. Unit Forward voltage Parameter VF IF=10A 䠉 1.2 1.55 V Reverse current IR VR=430V 䠉 0.05 10 μA Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×IR 䠉 18 30 ns Rth(j-c) Junction to case 䠉 䠉 4.0 °C/W Thermal resistance WWWROHMCOM Ú2/(-#O,TD!LLRIGHTSRESERVED 1/4 2012.06 - Rev.A Data Sheet RFN10NS4S 100 100000 Tj=150°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 10000 10 Tj=150°C Tj=125°C 1 Tj=75°C Tj=125°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=25°C 0.1 1 0 500 1000 1500 2000 2500 0 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 100 150 200 250 300 350 400 450 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1250 100 VR=430V Tj=25°C IF=10A Tj=25°C 1240 1230 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 50 1220 1210 1200 AVE:1181mV 1190 1180 10 AVE:11.6nA 1170 1160 1150 1 VF DISPERSION MAP IR DISPERSION MAP 200 1000 f=1MHz f=1MHz VR=0V Tj=25°C 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 180 100 10 170 160 150 140 130 AVE:157pF 120 110 100 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.06 - Rev.A Data Sheet RFN10NS4S 240 30 AVE:186A 200 180 160 140 IFSM 120 8.3ms RESERVE RECOVERY TIME:trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 220 IF=0.5A IR=1.0A Irr=0.25×IR 25 Tj=25°C 20 15 AVE:18.4ns 10 5 1cyc. 0 100 IFSM DISPERSION MAP trr DISPERSION MAP 1000 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 100 10 IFSM 8.3ms 8.3ms time 100 1cyc. 1 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 TIME:t(ms) IFSM-t CHARACTERISTICS 5 100 AVE:2.44kV 3 2 AVE:0.57kV 1 0 C=200pF R=0Ω TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) ELECTROSTATIC DISCHARGE TEST ESD(kV) 4 C=100pF R=1.5kΩ 10 Rth(j-c) 1 0.1 0.001 ESD DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Rth(j-a) 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 3/4 2012.06 - Rev.A Data Sheet RFN10NS4S 30 18 D.C. 16 D=0.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 25 FORWARD POWER DISSIPATION:Pf(W) D=0.5 20 half sin wave D=0.2 15 D=0.1 D=0.05 10 14 t T 10 D=t/T VR=430V Tj=150°C D.C. D=0.8 8 D=0.5 half sin wave 6 D=0.2 D=0.1 4 D=0.05 2 0 0 2 4 6 8 10 12 14 16 18 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS D.C. 16 0A Io 0V VR 60 90 120 150 t D=0.8 14 T 12 30 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 18 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io VR 12 5 0 0A 0V D=0.5 D=t/T VR=430V Tj=150°C 10 half sin wave 8 6 D=0.2 4 D=0.1 2 D=0.05 0 0 30 60 90 120 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/4 2012.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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