RFN10NS4S : Diodes

Data Sheet
Super Fast Recovery Diode
RFN10NS4S
zSerise
Standard Fast Recovery
zDimensions(Unit : mm)
zApplications
General rectification
zLand Size Figure(Unit : mm)
㻾㻲㻺㻝㻜㻌
㻺㻿㻠㻿
䐟㻌
zFeatures
1)Low switching loss
2)High current overload capacity
LPDS
zStructure
ROHM : LPDS
JEITA : TO263S
ձ Manufacture Date
zConstruction
Silicon epitaxial planer type
zTaping Dimensions(Unit : mm)
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty䍺0.5
430
V
Reverse voltage
VR
430
V
Average rectified foward current
Io
IFSM
Forward current surge peak
Direct voltage
60Hz half sin wave , Resistive load
Tc=75°C
10
A
(*1)
80
A
60Hz half sin wave , Non-repetitive at Tj=25°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
(*1) 1-3pin common circuit
zElectrical Characteristics(Tj=25°C)
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
Parameter
VF
IF=10A
䠉
1.2
1.55
V
Reverse current
IR
VR=430V
䠉
0.05
10
μA
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25×IR
䠉
18
30
ns
Rth(j-c)
Junction to case
䠉
䠉
4.0
°C/W
Thermal resistance
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2012.06 - Rev.A
Data Sheet
RFN10NS4S
100
100000
Tj=150°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
10000
10
Tj=150°C
Tj=125°C
1
Tj=75°C
Tj=125°C
1000
Tj=75°C
100
Tj=25°C
10
Tj=25°C
0.1
1
0
500
1000
1500
2000
2500
0
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100
150
200
250
300
350
400
450
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
1250
100
VR=430V
Tj=25°C
IF=10A
Tj=25°C
1240
1230
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
50
1220
1210
1200
AVE:1181mV
1190
1180
10
AVE:11.6nA
1170
1160
1150
1
VF DISPERSION MAP
IR DISPERSION MAP
200
1000
f=1MHz
f=1MHz
VR=0V
Tj=25°C
190
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
180
100
10
170
160
150
140
130
AVE:157pF
120
110
100
1
0
5
10
15
20
25
30
Ct DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
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2/4
2012.06 - Rev.A
Data Sheet
RFN10NS4S
240
30
AVE:186A
200
180
160
140
IFSM
120
8.3ms
RESERVE RECOVERY TIME:trr(ns)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
220
IF=0.5A
IR=1.0A
Irr=0.25×IR
25
Tj=25°C
20
15
AVE:18.4ns
10
5
1cyc.
0
100
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
1000
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
100
10
IFSM
8.3ms 8.3ms
time
100
1cyc.
1
10
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
5
100
AVE:2.44kV
3
2
AVE:0.57kV
1
0
C=200pF
R=0Ω
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
4
C=100pF
R=1.5kΩ
10
Rth(j-c)
1
0.1
0.001
ESD DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
Rth(j-a)
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
3/4
2012.06 - Rev.A
Data Sheet
RFN10NS4S
30
18
D.C.
16
D=0.8
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
25
FORWARD POWER
DISSIPATION:Pf(W)
D=0.5
20
half sin wave
D=0.2
15
D=0.1
D=0.05
10
14
t
T
10
D=t/T
VR=430V
Tj=150°C
D.C.
D=0.8
8
D=0.5
half sin wave
6
D=0.2
D=0.1
4
D=0.05
2
0
0
2
4
6
8
10
12
14
16
18
0
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
D.C.
16
0A
Io
0V
VR
60
90
120
150
t
D=0.8
14
T
12
30
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
18
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io
VR
12
5
0
0A
0V
D=0.5
D=t/T
VR=430V
Tj=150°C
10
half sin wave
8
6
D=0.2
4
D=0.1
2
D=0.05
0
0
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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4/4
2012.06 - Rev.A
Notice
Notes
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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R1120A