RFUH20NS4SFH : Diodes

Data Sheet
AEC-Q101 Qualified
Super Fast Recovery Diode
RFUH20NS4SFH
zSerise
Super Fast Recovery
zDimensions(Unit : mm)
zApplications
General rectification
zLand Size Figure(Unit : mm)
RFUH20
NS4S
ձ
zFeatures
1)Ultra low switching loss
LPDS
zStructure
2)High current overload capacity
ROHM : LPDS
JEITA : TO263S
ձ Manufacture Date
zConstruction
Silicon epitaxial planer type
zTaping Dimensions(Unit : mm)
zAbsolute Maximum Ratings(Tc=25°C)
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Parameter
VRM
Duty䍺0.5
430
V
Reverse voltage
VR
Direct voltage
430
V
Average rectified foward current
Io
20
A
IFSM
60Hz half sin wave , Resistive load
Tc=26°C
(*1)
100
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
Forward current surge peak
60Hz half sin wave , Non-repetitive at Tj=25°C
(*1) 1-3pin common circuit
zElectrical Characteristics(Tj=25°C)
Parameter
Symbol
Conditions
Forward voltage
VF
IF=20A
Reverse current
IR
VR=430V
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25×IR
Rth(j-c)
Junction to case
Thermal resistance
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Min.
Typ.
Max.
Unit
䠉
1.5
1.7
V
䠉
0.05
10
μA
䠉
18
25
ns
䠉
䠉
3.0
°C/W
2012.06 - Rev.A
RFUH20NS4SFH
Data Sheet
100
100000
Tj=150°C
10
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
10000
Tj=150°C
Tj=125°C
Tj=75°C
1
Tj=25°C
Tj=125°C
1000
Tj=75°C
100
Tj=25°C
10
1
0.1
0
500
1000
1500
2000
0
2500
50
100
150
200 250
300
350
400
450
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100
1550
1540
IF=20A
1530
VR=430V
Tj=25°C
Tj=25°C
1510
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
1520
1500
AVE:1455mV
1490
1480
1470
1460
1450
1440
1430
10
AVE:21.6nA
1420
1410
1400
1
IR DISPERSION MAP
VF DISPERSION MAP
1000
300
f=1MHz
f=1MHz
VR=0V
295
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
290
100
10
Tj=25°C
285
280
275
270
265
260
255
AVE:266pF
250
245
240
1
0
5
10
15
20
25
30
Ct DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
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2/4
2012.06 - Rev.A
RFUH20NS4SFH
30
300
260
240
AVE:219A
220
200
IFSM
180
8.3ms
RESERVE RECOVERY TIME:trr(ns)
280
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
IF=0.5A
IR=1.0A
Irr=0.25×IR
25
Tj=25°C
20
15
AVE:18.1ns
10
5
1cyc.
160
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
1000
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
100
10
IFSM
time
100
8.3ms 8.3ms
1cyc.
10
1
1
100
4
AVE:2.96kV
3
2
AVE:0.62kV
1
C=200pF
R=0Ω
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
5
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
10
Rth(j-c)
1
0.1
0.001
C=100pF
R=1.5kΩ
0.1
10
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
Rth(j-a)
10
3/4
2012.06 - Rev.A
RFUH20NS4SFH
Data Sheet
70
35
D.C.
60
30
FORWARD POWER
DISSIPATION:Pf(W)
50
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D=0.8
D=0.5
half sin wave
40
D=0.2
D=0.1
30
D=0.05
20
t
T
20
D=0.8
D=0.5
10
half sin wave
D=0.2
0
0
D=0.1
10
15
20
25
30
35
0
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
D=t/T
VR=430V
Tj=150°C
D.C.
15
5
5
Io
VR
25
10
0
0A
0V
D=0.05
30
60
90
120
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
35
D.C.
30
0A
Io
0V
VR
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
t
D=0.8
D=0.5
25
T
D=t/T
VR=430V
Tj=150°C
20
half sin wave
15
D=0.2
10
D=0.1
D=0.05
5
0
0
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2012 ROHM Co., Ltd. All rights reserved.
4/4
2012.06 - Rev.A
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R1120A