Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20TB4SFH zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure 㻠㻚㻡㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻞㻚㻤㼼㻜㻚㻞 䚷䚷䚷㻌㻜㻚㻝 zFeatures 1)Low switching loss 2)High current overload capacity 㻡㻚㻜㼼㻜㻚㻞 RFN20T B4S 䐟 㻝㻟㻚㻡㻹㻵㻺 㻝㻚㻞 㻝㻚㻟 zConstruction Silicon epitaxial planer type 㻝㻡㻚㻜㼼㻜㻚㻠 㻌㻌㻌㻌㻌䚷㻌㻜㻚㻞 㻤㻚㻜 zApplications General rectification 㻤㻚㻜㼼㻜㻚㻞 㻝㻞㻚㻜㼼㻜㻚㻞 㻝㻜㻚㻜㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻜㻚㻤 㻔㻝㻕 㻔㻞㻕 㻔㻟㻕 2.54d0.5 2.54d0.5 㻜㻚㻣㼼㻜㻚㻝 㻌㻌㻌㻌㻌㻌㻌㻜㻚㻜㻡 㻞㻚㻢㼼㻜㻚㻡 ROHM : 䠰O220FN Manufacture Year Week 䐟㻌 zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty䍺0.5 430 V Reverse voltage VR 430 V 20 A 100 A Average rectified foward current Io IFSM Forward current surge peak Direct voltage 60Hz half sin wave , Resistive load Tc=49°C 60Hz half sin wave , Non-repetitive at Tj=25°C Junction temperature Tj 150 °C Storage temperature Tstg 55 to 150 °C zElectrical Characteristics(Tj=25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=20A 䠉 1.3 1.55 V Reverse current IR VR=430V 䠉 0.05 10 μA Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×IR 䠉 22 30 ns Rth(j-c) Junction to case 䠉 㸫 2.5 °C/W Thermal resistance WWWROHMCOM Ú2/(-#O,TD!LLRIGHTSRESERVED 1/4 2012.06 - Rev.A RFN20TB4SFH Data Sheet 100000 100 Tj=150°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 10000 10 Tj=150°C Tj=125°C 1 Tj=75°C Tj=125°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=25°C 1 0.1 0 500 1000 1500 2000 0 2500 50 100 150 200 250 300 400 450 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1000 1350 IF=20A 1340 VR=430V Tj=25°C Tj=25°C 1330 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 350 1320 1310 1300 1290 1280 100 AVE:15.7nA 10 1270 AVE:1298mV 1260 1 1250 IR DISPERSION MAP VF DISPERSION MAP 1000 300 f=1MHz VR=0V Tj=25°C f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 290 100 10 280 270 260 AVE:268pF 250 240 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.06 - Rev.A RFN20TB4SFH 30 300 RESERVE RECOVERY TIME:trr(ns) 280 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet 260 240 AVE:277A 220 200 IFSM 180 8.3ms IF=0.5A IR=1.0A Irr=0.25×IR Tj=25°C 25 20 15 AVE:21.7ns 10 5 1cyc. 160 0 IFSM DISPERSION MAP trr DISPERSION MAP 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 100 10 IFSM 8.3ms 8.3ms 100 10 IFSM time 1cyc. 1 1 1 10 100 1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 AVE:2.58kV 3 2 AVE:0.63kV 1 C=200pF R=0Ω TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 4 ELECTROSTATIC DISCHARGE TEST ESD(kV) 100 TIME:t(ms) IFSM-t CHARACTERISTICS 5 0 10 Rth(j-c) 1 0.1 0.001 C=100pF R=1.5kΩ 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Rth(j-a) 10 3/4 2012.06 - Rev.A RFN20TB4SFH 35 70 D.C. 60 30 50 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) FORWARD POWER DISSIPATION:Pf(W) D=0.8 D=0.5 half sin wave 40 D=0.2 30 D=0.1 D=0.05 20 0A Io 0V VR t 25 T D.C. 20 D=t/T VR=430V Tj=150°C D=0.8 D=0.5 half sin wave 15 D=0.2 D=0.1 10 D=0.05 5 10 0 0 0 5 10 15 20 25 30 35 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 35 60 90 120 150 Io 0V 30 30 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 0A D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Data Sheet VR t D=0.8 T 25 D=0.5 D=t/T VR=430V Tj=150°C 20 half sin wave 15 D=0.2 10 D=0.1 D=0.05 5 0 0 30 60 90 120 150 CASE TEMPERATURE:Tc(°C) DERARING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/4 2012.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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