RFN20TB4SFH : Diodes

Data Sheet
AEC-Q101 Qualified
Super Fast Recovery Diode
RFN20TB4SFH
zSerise
Standard Fast Recovery
zDimensions(Unit : mm)
zStructure
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䚷䚷䚷㻌㻜㻚㻝
㻞㻚㻤㼼㻜㻚㻞
䚷䚷䚷㻌㻜㻚㻝
zFeatures
1)Low switching loss
2)High current overload capacity
㻡㻚㻜㼼㻜㻚㻞
RFN20T
B4S 䐟
㻝㻟㻚㻡㻹㻵㻺
㻝㻚㻞
㻝㻚㻟
zConstruction
Silicon epitaxial planer type
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㻌㻌㻌㻌㻌䚷㻌㻜㻚㻞
㻤㻚㻜
zApplications
General rectification
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㻝㻞㻚㻜㼼㻜㻚㻞
㻝㻜㻚㻜㼼㻜㻚㻟
䚷䚷䚷㻌㻜㻚㻝
㻜㻚㻤
㻔㻝㻕 㻔㻞㻕 㻔㻟㻕
2.54d0.5
2.54d0.5
㻜㻚㻣㼼㻜㻚㻝
㻌㻌㻌㻌㻌㻌㻌㻜㻚㻜㻡
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ROHM : 䠰O220FN
Manufacture Year Week
䐟㻌
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty䍺0.5
430
V
Reverse voltage
VR
430
V
20
A
100
A
Average rectified foward current
Io
IFSM
Forward current surge peak
Direct voltage
60Hz half sin wave , Resistive load
Tc=49°C
60Hz half sin wave , Non-repetitive at Tj=25°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
zElectrical Characteristics(Tj=25°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF=20A
䠉
1.3
1.55
V
Reverse current
IR
VR=430V
䠉
0.05
10
μA
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25×IR
䠉
22
30
ns
Rth(j-c)
Junction to case
䠉
㸫
2.5
°C/W
Thermal resistance
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2012.06 - Rev.A
RFN20TB4SFH
Data Sheet
100000
100
Tj=150°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
10000
10
Tj=150°C
Tj=125°C
1
Tj=75°C
Tj=125°C
1000
Tj=75°C
100
Tj=25°C
10
Tj=25°C
1
0.1
0
500
1000
1500
2000
0
2500
50
100
150
200
250
300
400
450
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1000
1350
IF=20A
1340
VR=430V
Tj=25°C
Tj=25°C
1330
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
350
1320
1310
1300
1290
1280
100
AVE:15.7nA
10
1270
AVE:1298mV
1260
1
1250
IR DISPERSION MAP
VF DISPERSION MAP
1000
300
f=1MHz
VR=0V
Tj=25°C
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
290
100
10
280
270
260
AVE:268pF
250
240
1
0
5
10
15
20
25
30
Ct DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
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2/4
2012.06 - Rev.A
RFN20TB4SFH
30
300
RESERVE RECOVERY TIME:trr(ns)
280
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
260
240
AVE:277A
220
200
IFSM
180
8.3ms
IF=0.5A
IR=1.0A
Irr=0.25×IR
Tj=25°C
25
20
15
AVE:21.7ns
10
5
1cyc.
160
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1000
100
10
IFSM
8.3ms 8.3ms
100
10
IFSM
time
1cyc.
1
1
1
10
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
AVE:2.58kV
3
2
AVE:0.63kV
1
C=200pF
R=0Ω
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
4
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
5
0
10
Rth(j-c)
1
0.1
0.001
C=100pF
R=1.5kΩ
0.1
10
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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Rth(j-a)
10
3/4
2012.06 - Rev.A
RFN20TB4SFH
35
70
D.C.
60
30
50
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
FORWARD POWER
DISSIPATION:Pf(W)
D=0.8
D=0.5
half sin wave
40
D=0.2
30
D=0.1
D=0.05
20
0A
Io
0V
VR
t
25
T
D.C.
20
D=t/T
VR=430V
Tj=150°C
D=0.8
D=0.5
half sin wave
15
D=0.2
D=0.1
10
D=0.05
5
10
0
0
0
5
10
15
20
25
30
35
0
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
35
60
90
120
150
Io
0V
30
30
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
0A
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Data Sheet
VR
t
D=0.8
T
25
D=0.5
D=t/T
VR=430V
Tj=150°C
20
half sin wave
15
D=0.2
10
D=0.1
D=0.05
5
0
0
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERARING CURVE(Io-Tc)
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4/4
2012.06 - Rev.A
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R1120A