RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure (Unit : mm) z External dimensions (Unit : mm) 0.15±0.03 1.6±0.1 3.05 2.6±0.1 ① zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability. 3.5±0.2 0.85 1.2 0～0.1 0.9±0.1 0.8±0.1 zStructure 0.45 ROHM : PMDU JEDEC : SOD-123 ① Manufacture 製造年月Date 0.6 0～0.1 zConstruction Silicon epitaxial planar 0.15±0.03 0.8±0.1 0.6 PMDU z Taping specifications (Unit : mm) φ1.0±0.2 0 8.0±0.2 2.8±0.05 3.5±0.05 4.0±0.1 1.81±0.05 3.71±0.05 0.25±0.05 1.75±0.1 φ1.55±0.1 0.05 2.0±0.05 4.0±0.1 1.05±0.1 zAbsolute maximum ratings (Ta=25°C) Sym bol Lim its Unit R evers e voltage (repetitive peak) Param eter VRM 90 V R evers e voltagec(DC) VR 90 V Average rectified forward current Io 1 A IFSM 30 A Forward current s urge peak （ 60Hz・ 1cyc） J unction tem perature Tj 150 ℃ S torage tem perature Ts tg -40 to +150 ℃ Mounted on epoxy board. 180 ° Harf s ine wave zElectrical characteristics (Ta=25°C) Param eter Sym bol Min. Typ. Max. Unit Forward voltage VF - - 0.73 V IF =1.0A Conditions Revers e current IR - - 100 µA VR =90V 1/3 RB160M-90 Diodes zElectrical characteristic curves (Ta=25°C) Ta=150℃ 1 Ta=125℃ 1000 10000 条件：f=1MHz f=1MHz Ta=75℃ Ta=25℃ 0.1 Ta=150℃ Ta=75℃ Ta=-25℃ 0.01 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0 100 200 300 400 500 600 10 1 0 700 10 20 30 40 50 60 70 80 90 0 REVERSE CURRENT:IR(uA) 640 90 630 620 610 80 70 60 50 40 AVE:478.3nA 30 σ:36.1612nA AVE:4.655uA 20 AVE:632.1mV VF DISPERSION MAP 170 160 150 140 130 120 100 8.3ms 100 50 AVE:56.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 150 AVE:149.6pF Ct DISPERSION MAP 30 1cyc 15 AVE:7.40ns 10 5 8.3ms 50 1 trr DISPERSION MAP IFSM DISRESION MAP 150 8.3ms 1cyc 0 0 0 30 Ta=25℃ f=1MHz VR=0V n=10pcs 180 IR DISPERSION MAP Ifsm 25 100 0 200 20 110 10 600 15 190 Ta=25℃ T a=25℃ VR=90V VR=100V n=30pcs n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1A n=30pcs 10 200 100 650 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 100 0.01 0.001 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1000 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 2 1000 Mounted on epoxy board Rth(j-a) PEAK SURGE FORWARD CURRENT:IFSM(A) t 100 50 0 1.5 100 Rth(j-c) 10 IM=10mA IF=0.5A 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 D=1/2 1 DC Sin(θ＝180) 0.5 1ms time 300us 0.1 0.1 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 2/3 RB160M-90 Diodes 1 3 3 0.6 D=1/2 DC 0.4 0.2 0A Io 0V VR t 2 DC T D=t/T VR=45V Tj=150℃ 1.5 D=1/2 1 0.5 2.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:P R (W) 0.8 Sin(θ＝180) 0A Io 0V VR t 2 DC T D=t/T VR=45V Tj=150℃ 1.5 D=1/2 1 Sin(θ＝180) 0.5 Sin(θ＝180) 0 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS 90 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 150 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) 125 150 30 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 25 20 AVE:10.7kV 15 10 AVE:1.70kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1