SID05N10 5A , 100V , RDS(ON) 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free TO-251 DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. FEATURES A B Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel C D GE K H F 2 Drain MARKING: 05N10 M J 1 Gate Millimeter Min. Max. 6.40 6.80 5.20 5.50 2.20 2.40 0.45 0.55 6.80 7.20 7.20 7.80 REF. Date code 3 Source A B C D E F P REF. G H J K M P Millimeter Min. Max. 5.40 5.80 0.90 1.50 2.30 0.60 0.90 0.50 0.70 0.45 0.60 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V 5 A 3.75 A IDM 20 A Parameter Continuous Drain Current TC=25°C TC=100°C Pulsed Drain Current 1 Total Power Dissipation @ TC = 25°C ID PD 20 W Thermal Resistance Junction-case RθJC 6.25 °C / W Thermal Resistance Junction-ambient RθJA 110 °C / W 0.16 W / °C -55~150 °C Linear Derating Factor Operating Junction & Storage temperature http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A TJ, TSTG Any changes of specification will not be informed individually. Page 1 of 4 SID05N10 5A , 100V , RDS(ON) 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS 100 - - V VGS=0, ID=1mA Gate Threshold Voltage VGS(th) 1 - 2.5 V VDS=10V, ID=1mA Forward Trans-conductance gfs - 4 - S VDS =10V, ID =2.5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current TJ=25°C IDSS - - 10 uA VDS=100 V, VGS=0 - - 170 - - 200 Td(on) - 9 - Tr - 9.4 - Td(off) - 26.8 - Tf - 2.6 - Input Capacitance Ciss - 975 - Output Capacitance Coss - 38 - Reverse Transfer Capacitance Crss - 27 - 2 Static Drain-Source On-Resistance Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time RDS(ON) mΩ Test Conditions VGS=10 V, ID=2.5A VGS=4V, ID=2.5A nS VDD=30V ID=1A VGS=10 V RG=6Ω RL=30Ω pF VGS=0 VDS=25V f =1 MHz V IS=5A, VGS=0 ,TJ=25 °C Source-Drain Diode Forward On Voltage 2 VSD - - 1.5 Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse width≦300us, duty cycle≦2% . http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SID05N10 Elektronische Bauelemente 5A , 100V , RDS(ON) 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SID05N10 Elektronische Bauelemente 5A , 100V , RDS(ON) 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4